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KR970021370A - 플라즈마 cvd장치 및 방법과 드라이에칭장치 및 방법 - Google Patents

플라즈마 cvd장치 및 방법과 드라이에칭장치 및 방법 Download PDF

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KR970021370A
KR970021370A KR1019960038776A KR19960038776A KR970021370A KR 970021370 A KR970021370 A KR 970021370A KR 1019960038776 A KR1019960038776 A KR 1019960038776A KR 19960038776 A KR19960038776 A KR 19960038776A KR 970021370 A KR970021370 A KR 970021370A
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processing chamber
plasma
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료키 도베
마사오 사사키
아츠시 세키구치
겐이치 다카기
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니시히라 슌지
아네루바 가부시키가이샤
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
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    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
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    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

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Abstract

플라즈마발생전극과 플라즈마와 처리실내벽의 상대전위관계를 최적으로 하여 시간경과에 따른 변화가 매우적은 안정된 저압고밀도 플라즈마를 얻는다.
1턴 루프형상을 한 플라즈마발생전극(61)의 한쪽의 도입단자(62)를 고주파전원(52)에 접속하고, 다른쪽 도입단자(63)를 제1콘덴서(81)를 통하여 접지한다. 사염화티탄을 매분 20밀리리터, 수소가스를 매분 30밀리리터, 질소가스를 매분 10밀리리터의 유량으로 처리실(20)에 도입하고, 처리실(20)내의 압력을 약 1Pa로 설정하고, 기체(21)온도를 450℃∼600℃로 설정한다. 고주파전원(5)의 출력을 2.5kW로 하여 저압고밀도의 플라즈마를 발생시키면, 질화티탄의 막이 매분 약 30nm의 속도로 퇴적한다.

Description

플라즈마 CVD장치 및 방법과 드라이에칭장치 및 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 플라즈마 CVD장치의 1실시형태의 구성도,
제2도는 가스도입기구의 구성도,
제3도는 플라즈마 발생전극의 평면도,
제4도는 절연링의 일부를 절단한 사시도.

Claims (35)

  1. 처리실, 처리실내를 진공으로 배기하는 배기기구, 원료가스를 처리실에 도입하는 가스 도입기구, 및 처리실내에 배치된 플라즈마발생전극을 구비하고, 플라즈마발생전극에 전력을 공급하여 플라즈마를 발생시킴으로써 처리실내의 기체상에 막을 퇴적시키는 플라즈마 CVD장치에 있어서, 상기 플라즈마발생전극은 두개의 단자를 구비하고, 한쪽 단자는 고주파 전력공급원에 접속되고, 다른쪽 단자는 전극전위제어기구를 통하여 접지되고, 또한 상기 처리실이 내벽전위제어기구를 통하여 접지되어 있는 것을 특징으로 하는 플라즈마 CVD장치.
  2. 제1항에 있어서, 상기 전극전위제어기구는 제1콘덴서를 구비하는 것을 특징으로 하는 플라즈마 CVD장치.
  3. 제1항에 있어서, 상기 전극전위제어기구는 상기 다른쪽 단자와 어스 사이에 접속된 제1콘덴서와, 상기 다른쪽 단자와 상기 제1콘덴서 사이의 접속점과 어스 사이에 접속된 인덕터와 직류전원의 직렬회로를 구비하는 것을 특징으로 하는 플라즈마 CVD장치.
  4. 제1항에 있어서, 상기 내벽전위제어기구는 제2콘덴서를 구비하는 것을 특징으로 하는 플라즈마 CVD장치.
  5. 제1항에 있어서, 상기 내벽전위제어기구는 처리실과 어스 사이에 접속된 제2콘덴서와, 처리실과 상기 제2콘덴서 사이의 접속점과 어스 사이에 접속된 인덕터와 직류전원의 직렬회로를 구비하는 것을 특징으로 하는 플라즈마 CVD장치.
  6. 처리실, 처리실내를 진공으로 배기하는 배기기구, 원료가스를 처리실에 도입하는 가스 도입기구, 및 처리 실내에 배치된 플라즈마발생전극을 구비하고, 플라즈마발생전극에 전력을 공급하여 플라즈마를 발생시킴으로써 처리실내의 기체상에 막을 퇴적시키는 플라즈마 CVD장치에 있어서, 상기 플라즈마발생전극은 두개의 단자를 구비하고, 한쪽 단자는 고주파 전력공급원에 접속되고, 다른쪽 단자는 전극전위제어기구를 통하여 접지되고, 상기 처리실이 접지되어 있는 것을 특징으로 하는 플라즈마 CVD장치.
  7. 제6항에 있어서, 상기 전극전위제어기구는 제1콘덴서를 구비하는 것을 특징으로 하는 플라즈마 CVD장치.
  8. 제6항에 있어서, 상기 전극전위제어기구는 상기 다른쪽 단자와 어스 사이에 접속된 제1콘덴서와, 상기 다른쪽 단자와 상기 제1콘덴서 사이의 접속점과 어스 사이에 접속된 인덕터와 직류전원의 직렬회로를 구비하는 것을 특징으로 하는 플라즈마 CVD장치.
  9. 처리실, 처리실내를 진공으로 배기하는 배기기구, 원료가스를 처리실에 도입하는 가스 도입기구, 및 처리실내에 배치된 플라즈마발생전극을 구비하고, 플라즈마발생전극에 전력을 공급하여 플라즈마를 발생시킴으로써 처리실내의 기체상에 막을 퇴적시키는 플라즈마 CVD장치에 있어서, 상기 플라즈마발생전극은 두개의 단자를 구비하고, 한쪽 단자는 고주파전력공급원에 접속되고, 다른쪽 단자는 접지되고, 또한 상기 처리실이 내벽전위제어기구를 통하여 접지되어 있는 것을 특징으로 하는 플라즈마 CVD장치.
  10. 제9항에 있어서, 상기 내벽전위제어기구는 제2콘덴서를 구비하는 것을 특징으로 하는 플라즈아 CVD장치.
  11. 제9항에 있어서, 상기 내벽전위제어기구는 처리실과 어스 사이에 접속된 제2콘덴서와, 처리실과 상기제2콘덴서 사이의 접속점과 어스 사이에 접속된 인덕터와 직류전원의 직렬회로를 구비하는 것을 특징으로 하는 플라즈마 CVD장치.
  12. 제2항, 제3항, 제7항 및 제8항중의 어느 1항에 있어서, 상기 제1콘덴서의 정전용량은 100pF∼10μF인 것을 특징으로 하는 플라즈마 CVD장치.
  13. 제2항, 제3항, 제7항 및 제8항중의 어느 1항에 있어서, 상기 제1콘덴서는 가변콘덴서인 것을 특징으로 하는 플라즈마 CVD장치.
  14. 제1항 내지 제11항중의 어느 1항에 있어서, 상기 플라즈마발생전극의 표면은 도전체인 것을 특징으로하는 플라즈마 CVD장치.
  15. 제1항 내지 제11항중의 어느 1항에 있어서, 상기 플라즈마발생전극은 실질적으로 1턴의 코일인 것을 특징으로 하는 플라즈마 CVD장치.
  16. 제1항 내지 제11항중의 어느 1항에 있어서, 상기 플라즈마발생전극은 1주 이상 감긴코일인 것을 특징으로 하는 플라즈마 CVD장치.
  17. 제1항 내지 제11항중의 어느 1항에 있어서, 상기 플라즈마발생전극은 1평면내에서 와류형상으로 감겨있는 것을 특징으로 하는 플라즈마 CVD장치.
  18. 제1항 내지 제11항중의 어느 1항에 있어서, 상기 플라즈마발생전극은 1개의 직선상 막대인 것을 특징으로 하는 플라즈마 CVD장치.
  19. 제1항 내지 제11항중의 어느 1항에 있어서, 상기 플라즈마발생전극은 2개 이상의 직선상 막대를 병렬로 나열한 것임을 특징으로 하는 플라즈마 CVD장치.
  20. 제1항 내지 제11항중의 어느 1항에 있어서, 상기 플라즈마발생전극은 1매의 평판상 판인 것을 특징으로 하는 플라즈마 CVD장치.
  21. 제1항 내지 제11항중의 어느 1항에 있어서, 상기 플라즈마발생전극은 그 내부가 유체로 냉각되는 것을 특징으로 하는 플라즈마 CVD장치.
  22. 제1항 내지 제11항중의 어느 1항에 있어서, 상기 플라즈마발생전극의 표면재질이 기체상에 퇴적할 박막 재질과 같은 것을 특징으로 하는 플라즈마 CVD장치.
  23. 제1항 내지 제11항중의 어느 1항에 있어서, 상기 플라즈마발생전극의 표면재질이 기체상에 퇴적할 박막 조성의 일부인 것을 특징으로 하는 플라즈마 CVD장치.
  24. 제1항 내지 제11항중의 어느 1항에 있어서, 멀티커스프자장을 상기 처리실 내부에 발생시킬 수 있는 멀티커스프 자장발생기구를 구비하고 있는 것을 특징으로 하는 플라즈마 CVD장치.
  25. 제1항 내지 제11항중의 어느 1항에 있어서, 상기 배기기구가 상기 처리실내의 압력을 일정하게 제어하는 압력제어기구를 구비하고 있는 것을 특징으로 하는 플라즈마 CVD장치.
  26. 제1항 내지 제11항중의 어느 1항에 있어서, 상기 기체에 바이어스전압을 인가하기 위한 바이어스인가기구를 구비하고 있는 것을 특징으로 하는 플라즈마 CVD장치.
  27. 처리실에 원료가스를 도입하고 처리실내에 배치된 플라즈마발생전극에 전력을 공급하여 플라즈마를 발생시킴으로써 처리실내의 기체상에 도전성 막을 퇴적시키는 플라즈마 CVD방법에 있어서, 상기 플라즈마발생 전극은 두 개의 단자를 구비하고, 한쪽 단자는 고주파전력공급원에 접속되고, 다른쪽 단자는 전극전위제어기구를 통하여 접지되고, 또한 상기 처리실이 내벽전위제어기구를 통하여 접지되어 있는 것을 특징으로 하는 플라즈마 CVD방법.
  28. 처리실에 원료가스를 도입하고 처리실내에 배치된 플라즈마발생전극에 전력을 공급하여 플라즈마를 발생시킴으로써 처리실내의 기체상에 도전성 막을 퇴적시키는 플라즈마 CVD방법에 있어서, 상기 플라즈마발생 전극은 두 개의 단자를 구비하고, 한쪽 단자는 고주파전력공급원에 접속되고, 다른쪽 단자는 전극전위제어기구를 통하여 접지되고, 상기 처리실이 접지되어 있는 것을 특징으로 하는 플라즈마 CVD방법.
  29. 처리실에 원료가스를 도입하고 처리실내에 배치된 플라즈마발생전극에 전력을 공급하여 플라즈마를 발생시킴으로써 처리실내의 기체상에 도전성 막을 퇴적시키는 플라즈마 CVD방법에 있어서, 상기 플라즈마발생 전극은 두 단자를 구비하고, 한쪽 단자는 고주파 전력공급원에 접속되고, 다른쪽 단자는 접지되고, 또한 상기 처리실이 내벽전위제어기구를 통하여 접지되어 있는 것을 특징으로 하는 플라즈마 CVD방법.
  30. 처리실, 처리실내를 진공으로 배기하는 배기기구, 처리용가스를 처리실에 도입하는 가스도입기구, 및 처리실내에 배치된 플라즈마발생전극을 구비하고, 플라즈마발생전극에 전력을 공급하며 플라즈마를 발생시킴으로써 처리실내의 기체상에 막을 에칭하는 드라이에칭장치에 있어서, 상기 플라즈마발생전극은 두개의 단자를 구비하고, 한쪽 단자는 고주파전력공급원에 접속되고, 다른쪽 단자는 전극전위제어기구를 통하여 접지되고, 또한 상기 처리실이 내벽전위제어기구를 통하여 접지되어 있는 것을 특징으로 하는 드라이에칭장치.
  31. 처리실, 처리실내를 진공으로 배기하는 배기기구, 처리용가스를 처리실에 도입하는 가스도입기구, 및 처리실내에 배치된 플라즈마발생전극을 구비하고, 플라즈마발생전극에 전력을 공급하여 플라즈마를 발생시킴으로써 처리실내의 기체상에 막을 에칭하는 드라이에칭장치에 있어서, 상기 플라즈마발생전극은 두개의 단자를 구비하고, 한쪽 단자는 고주파전력공급원에 접속되고, 다른쪽 단자는 전극전위제어기구를 통하여 접지되고, 상기 처리실이 접지되어 있는 것을 특징으로 하는 드라이에칭장치.
  32. 처리실, 처리실내를 진공으로 배기하는 배기기구, 처리용가스를 처리실에 도입하는 가스도입기구, 및 처리실내에 배치된 플라즈마발생전극을 구비하고, 플라즈마발생전극에 전력을 공급하여 플라즈마를 발생시킴으로써 처리실내의 기체상에 막을 에칭하는 드라이에칭장치에 있어서, 상기 플라즈마발생전극은 두개의 단자를 구비하고, 한쪽 단자는 고주파전력공급원에 접속되고, 다른쪽 단자는 접지되고, 또한 상기 처리실이 내벽전위제어기구를 통하여 접지되어 있는 것을 특징으로 하는 드라이에칭장치.
  33. 처리실에 처리용가스를 도입하고 처리실내에 배치된 플라즈마발생전극에 전력을 공급하여 플라즈마를 발생시킴으로써 처리실내의 기체상의 막을 에칭하는 드라이에칭방법에 있어서, 상기 플라즈마발생전극은 두개의 단자를 구비하고, 한쪽 단자는 고주파전력공급원에 접속되고, 다른쪽 단자는 전극전위제어기구를 통하여 접지되고, 또한 상기 처리실이 내벽전위제어기구를 통하여 접지되어 있는 것을 특징으로 하는 드라이에칭방법.
  34. 처리실에 처리용가스를 도입하고 처리실내에 배치된 플라즈마발생전극에 전력을 공급하여 플라즈마를 발생시킴으로써 처리실내의 기체상의 막을 에칭하는 드라이에칭방법에 있어서, 상기 플라즈마발생전극은 두개의 단자를 구비하고, 한쪽 단자는 고주파전력공급원에 접속되고, 다른쪽 단자는 전극전위제어기구를 통하여 접지되고, 상기 처리실이 접지되어 있는 것을 특징으로 하는 드라이에칭방법.
  35. 처리실에 처리용가스를 도입하고 처리실내에 배치된 플라즈마발생전극에 전력을 공급하여 플라즈마를 발생시킴으로써 처리실내의 기체상의 막을 에칭하는 드라이에칭방법에 있어서, 상기 플라즈마발생전극은 두개의 단자를 구비하고, 한쪽 단자는 고주파전력공급원에 접속되고, 다른쪽 단자는 접지되고, 또한 상기 처리실이 내벽전위제어기구를 통하여 접지되어 있는 것을 특징으로 하는 드라이에칭방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960038776A 1995-10-11 1996-09-07 플라즈마 cvd장치 및 방법과 드라이에칭장치 및 방법 KR100232040B1 (ko)

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