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KR970015702A - 전자공업용 접착제로서의 예비 세라믹 중합체의 용도 - Google Patents

전자공업용 접착제로서의 예비 세라믹 중합체의 용도 Download PDF

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Publication number
KR970015702A
KR970015702A KR1019960041534A KR19960041534A KR970015702A KR 970015702 A KR970015702 A KR 970015702A KR 1019960041534 A KR1019960041534 A KR 1019960041534A KR 19960041534 A KR19960041534 A KR 19960041534A KR 970015702 A KR970015702 A KR 970015702A
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KR
South Korea
Prior art keywords
silicon
substrate
electronic component
ceramic
polymer
Prior art date
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KR1019960041534A
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English (en)
Inventor
클레이튼 알. 베어링거
로버트 찰스 케밀레티
그리쉬 찬드라
로렌 앤드류 할러스카
테레사 아일린 젠틀
Original Assignee
루이스 노만 에드워드
다우 코닝 코포레이션
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Application filed by 루이스 노만 에드워드, 다우 코닝 코포레이션 filed Critical 루이스 노만 에드워드
Publication of KR970015702A publication Critical patent/KR970015702A/ko

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    • C09J5/02Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving pretreatment of the surfaces to be joined
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Abstract

본 발명은 전자부품과 기판 사이에 예비 세라믹 중합체 층을 도포하여 이들을 상호 접착시킨 다음 가열하여 예비 세라믹 중합체를 세라믹으로 전환시킴을 포함하여, 전자부품을 기판에 접착시키는 방법에 관한 것이다. 본 발명의 방법은 환경에 의해 영향을 받지 않는 강력한 결합을 형성한다. 본 발명은 캐리어(carrier) 또는 회로판에 대한 집적회로의 접착에 유용하다.

Description

전자공업용 접착제로서의 예비 세라믹 중합체의 용도
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (9)

  1. 각각 서로 접착될 표면을 갖는 전자부품과 기판을 제공하는 단계, 접착될 표면들 사이에 규소 함유 예비 세라믹 중합체를 포함하는 조성물 층을 도포하는 단계, 피접착 표면들을 결합시켜 전자부품, 기판 및 이들 사이에 도포된 규소 함유 예비 세라믹 중합체를 포함하는 어셈블리(assembly)를 형성하는 단계 및 어셈블리를 예비 세라믹 중합체를 세라믹으로 전환시키기에 충분한 온도로 가열하는 단계를 포함하여, 전자부품을 기판에 접착하는 방법.
  2. 제1항에 있어서, 전자부품이 집적회로 칩이고 기판이 회로판 및 칩 캐리어(carrier)로부터 선택되는 방법.
  3. 제1항에 있어서, 전자부품이 집적회로 칩 캐리어이고 기판이 회로판인 방법.
  4. 제1항에 있어서, 규소 함유 예비 세라믹 중합체가 폴리실록산, 폴리실라잔, 폴리실란 및 폴리카보실란으로 이루어진 그룹으로부터 선택되는 방법.
  5. 제1항에 있어서, 규소 함유 예비 세라믹 중합체가 하이드로겐 실세스퀴옥산 수지인 방법.
  6. 제1항에 있어서, 규소 함유 예비 세라믹 중합체가 하이드로폴리실라잔 수지인 방법.
  7. 제1항에 있어서, 규소 함유 예비 세라믹 중합체를 포함하는 조성물이 용매를 함유하는 방법.
  8. 제1항에 있어서, 규소 함유 예비 세라믹 중합체를 포함하는 조성물이 충전제를 함유하는 방법
  9. 제1항에 있어서, 어셈블 리가 150 내지 600℃의 온도에서 5분 내지 6시간 동안 가열되는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960041534A 1995-09-25 1996-09-23 전자공업용 접착제로서의 예비 세라믹 중합체의 용도 KR970015702A (ko)

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Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69606942T2 (de) * 1995-09-25 2000-10-05 Dow Corning Corp., Midland Verwendung von präkeramischen Polymeren als Klebstoffe für Elektronik
US6472076B1 (en) * 1999-10-18 2002-10-29 Honeywell International Inc. Deposition of organosilsesquioxane films
US6761975B1 (en) * 1999-12-23 2004-07-13 Honeywell International Inc. Polycarbosilane adhesion promoters for low dielectric constant polymeric materials
DE10251317B4 (de) * 2001-12-04 2006-06-14 Infineon Technologies Ag Halbleiterchip
AU2003232142A1 (en) * 2002-05-16 2003-12-02 Dow Corning Corporation Flame retardant compositions
AU2003250671A1 (en) * 2002-07-23 2004-02-09 Global Thermoelectric Inc. High temperature gas seals
KR100938376B1 (ko) * 2002-12-23 2010-01-22 에스케이케미칼주식회사 실리콘 중간체를 포함하는 플립 칩 본딩용 비도전성접착제 조성물
US6943058B2 (en) * 2003-03-18 2005-09-13 Delphi Technologies, Inc. No-flow underfill process and material therefor
US7281688B1 (en) * 2006-04-27 2007-10-16 The Boeing Company Materials for self-transpiring hot skins for hypersonic vehicles or reusable space vehicles
DE102007034609A1 (de) * 2007-07-25 2009-01-29 Robert Bosch Gmbh Fügeverfahren sowie Verbund aus mindestens zwei Fügepartnern
DE102009000888B4 (de) * 2009-02-16 2011-03-24 Semikron Elektronik Gmbh & Co. Kg Halbleiteranordnung
CN103222076B (zh) * 2010-11-18 2017-10-27 3M创新有限公司 包含聚硅氮烷接合层的发光二极管部件
US10543662B2 (en) 2012-02-08 2020-01-28 Corning Incorporated Device modified substrate article and methods for making
TWI617437B (zh) 2012-12-13 2018-03-11 康寧公司 促進控制薄片與載體間接合之處理
US9340443B2 (en) 2012-12-13 2016-05-17 Corning Incorporated Bulk annealing of glass sheets
US10014177B2 (en) 2012-12-13 2018-07-03 Corning Incorporated Methods for processing electronic devices
US10086584B2 (en) 2012-12-13 2018-10-02 Corning Incorporated Glass articles and methods for controlled bonding of glass sheets with carriers
US10510576B2 (en) 2013-10-14 2019-12-17 Corning Incorporated Carrier-bonding methods and articles for semiconductor and interposer processing
JP6770432B2 (ja) 2014-01-27 2020-10-14 コーニング インコーポレイテッド 薄いシートの担体との制御された結合のための物品および方法
SG11201608442TA (en) 2014-04-09 2016-11-29 Corning Inc Device modified substrate article and methods for making
JP2018524201A (ja) 2015-05-19 2018-08-30 コーニング インコーポレイテッド シートをキャリアと結合するための物品および方法
JP7106276B2 (ja) 2015-06-26 2022-07-26 コーニング インコーポレイテッド シート及び担体を有する物品及び方法
KR102387107B1 (ko) 2016-07-22 2022-04-15 쓰리엠 이노베이티브 프로퍼티즈 컴파니 세라믹 전구체로서의 중합체성 접착제 층
WO2018017554A1 (en) 2016-07-22 2018-01-25 3M Innovative Properties Company Siloxane-based adhesive layers as ceramic precursors
TW201825623A (zh) 2016-08-30 2018-07-16 美商康寧公司 用於片材接合的矽氧烷電漿聚合物
TWI810161B (zh) 2016-08-31 2023-08-01 美商康寧公司 具以可控制式黏結的薄片之製品及製作其之方法
FR3060601B1 (fr) * 2016-12-20 2018-12-07 Commissariat A L'energie Atomique Et Aux Energies Alternatives Composition adhesive et son utilisation dans l'electronique
US11999135B2 (en) 2017-08-18 2024-06-04 Corning Incorporated Temporary bonding using polycationic polymers
WO2019118660A1 (en) 2017-12-15 2019-06-20 Corning Incorporated Method for treating a substrate and method for making articles comprising bonded sheets
JP7611757B2 (ja) 2021-04-26 2025-01-10 信越化学工業株式会社 ガラス質接着剤

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU714508A1 (ru) * 1977-12-06 1980-02-05 Предприятие П/Я В-8574 Токопровод ща композици
JPS54134744A (en) * 1978-04-11 1979-10-19 Toshiba Ceramics Co Heat resistant adhesive material
US4255316A (en) * 1979-04-26 1981-03-10 Dow Corning Corporation Ceramifiable silicone adhesives
JPS5767083A (en) * 1980-10-06 1982-04-23 Kurosaki Refractories Co Ceramic tube jointing structure and method
US4422891A (en) * 1981-06-16 1983-12-27 Dentsply Research & Development Corporation Vitrifiable adhesive process
JPS62233508A (ja) * 1986-03-31 1987-10-13 株式会社東芝 セラミツクス部材の連結構造体
US4808653A (en) * 1986-12-04 1989-02-28 Dow Corning Corporation Coating composition containing hydrogen silsesquioxane resin and other metal oxide precursors
US4849296A (en) * 1987-12-28 1989-07-18 Dow Corning Corporation Multilayer ceramic coatings from metal oxides and hydrogen silsesquioxane resin ceramified in ammonia
US5073840A (en) * 1988-10-06 1991-12-17 Microlithics Corporation Circuit board with coated metal support structure and method for making same
US4943468A (en) * 1988-10-31 1990-07-24 Texas Instruments Incorporated Ceramic based substrate for electronic circuit system modules
US5336532A (en) * 1989-02-21 1994-08-09 Dow Corning Corporation Low temperature process for the formation of ceramic coatings
JPH03119087A (ja) * 1989-09-30 1991-05-21 Tonen Corp セラミックス及び/又は金属接着剤と用途
US5256487A (en) * 1989-12-08 1993-10-26 The B. F. Goodrich Company High char yield silazane derived preceramic polymers and cured compositions thereof
US4973526A (en) * 1990-02-15 1990-11-27 Dow Corning Corporation Method of forming ceramic coatings and resulting articles
US5262201A (en) * 1990-06-04 1993-11-16 Dow Corning Corporation Low temperature process for converting silica precursor coatings to ceramic silica coatings by exposure to ammonium hydroxide or an environment to which water vapor and ammonia vapor have been added
US5059448A (en) * 1990-06-18 1991-10-22 Dow Corning Corporation Rapid thermal process for obtaining silica coatings
US5407504A (en) * 1993-11-18 1995-04-18 The United States Of America As Represented By The Secretary Of The Army Method for joining ceramic to ceramic or to carbon
US5530293A (en) * 1994-11-28 1996-06-25 International Business Machines Corporation Carbon-free hydrogen silsesquioxane with dielectric constant less than 3.2 annealed in hydrogen for integrated circuits
US5601675A (en) * 1994-12-06 1997-02-11 International Business Machines Corporation Reworkable electronic apparatus having a fusible layer for adhesively attached components, and method therefor
US5616202A (en) * 1995-06-26 1997-04-01 Dow Corning Corporation Enhanced adhesion of H-resin derived silica to gold
DE69606942T2 (de) * 1995-09-25 2000-10-05 Dow Corning Corp., Midland Verwendung von präkeramischen Polymeren als Klebstoffe für Elektronik

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