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KR970003929A - 반도체장치 - Google Patents

반도체장치 Download PDF

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Publication number
KR970003929A
KR970003929A KR1019960023033A KR19960023033A KR970003929A KR 970003929 A KR970003929 A KR 970003929A KR 1019960023033 A KR1019960023033 A KR 1019960023033A KR 19960023033 A KR19960023033 A KR 19960023033A KR 970003929 A KR970003929 A KR 970003929A
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KR
South Korea
Prior art keywords
insulating film
capacitor
semiconductor device
opening
lower electrode
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Application number
KR1019960023033A
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English (en)
Other versions
KR100263396B1 (ko
Inventor
코지 아리타
아키히로 마쯔다
요시히사 나가노
토오루 나스
에이지 후지이
Original Assignee
스기야마 카즈히코
마쯔시다덴시코교 가부시기가이샤
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Application filed by 스기야마 카즈히코, 마쯔시다덴시코교 가부시기가이샤 filed Critical 스기야마 카즈히코
Publication of KR970003929A publication Critical patent/KR970003929A/ko
Application granted granted Critical
Publication of KR100263396B1 publication Critical patent/KR100263396B1/ko

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers

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  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

본 발명은, 강유전체막 또는 고유전율을 가진 고유전체막을 용량절연막으로 하는 용량소자를 내장한 반도체 장치에 관한 것으로, 용량절연막의 끝부분의 결정성열하에 의거한 전기적 특성의 열화가 없는 용량소자를 내장한 반도체 장치를 제공하는 것을 목적으로 하며, 그 구성에 있어서, 반도체기판(21)의 주면(主面)에 형성된 절연막(21a)위에, 용량절연막(23)의 끝부분이 하부전극(22)의 끝부분과 상부전극(24)의 끝부분과의 사이에 위치하도록 구성된 용량소자(25)가 형성되고, 또 용량소자(25)를 씌우는 보호막(26)이 형성되어 있다. 그리고 전극배선(28)이, 보호막(26)에 형성된 하부전극(22)에 이르는 제1개구(27a) 및 상부전극(24)에 이르는 제2개구(27b)를 개재해서, 하부전극(22) 및 상부전극(24)에 각각 접속되어 있다. 이와같이 용량절연막(23)의 끝부분이 상부전극(24)의 끝부분으로부터 비어져나와 있으므로서, 에칭에 의해 손상된 용량절연막(23)의 끝부분을 사용하지 않는 용량소자를 형성할 수 있는 것을 특징으로 한 것이다.

Description

반도체장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1실시예에 있어서의 반도체장치의 용량소자부분의 단면도.

Claims (5)

  1. 집적회로요소가 형성된 반도체기판과, 상기 반도체기판상에 형성된 절연막과, 상기 절연막상에 형성되고, 하부전극, 강유전체재료 또는 고유전율을 가진 유전체재료의 용량절연막, 및 상부전극으로 구성된 용량소자와, 상기 용량소자를 씌우도록 형성되고, 상기 하부 전극의 위쪽에 형성된 제1개구와 상기 상부전극의 위쪽에 형성된 제2개구를 가진 보호막과, 상기 제1개구를 개재해서 상기 하부전극에 상기 제2개구를 개재해서 상기 상부전극에 각각 접속된 전극배선을 구비하고, 상기 하부전극의 끝부분 및 상기 용량절연막의 끝부분이. 함께 상기 상부전극의 끝부분의 바깥쪽으로 비어져나와 있는 것을 특징으로 하는 반도체 장치.
  2. 제1항에 있어서, 상기 용량절연막의 끝부분이, 상기 하부전극의 끝부분과 상기 상부전극의 끝부분과의 사이에 있는 것을 특징으로 하는 반도체 장치.
  3. 제1항에 있어서, 상기 용량절연강의 끝부분이 상기 제1개구보다도 바깥쪽에위치하고, 상기 제1개구와 겹치는 상기 용량절연막의 영역에 제3개구가 형성되어 있는 것을 특징으로 하는 반도체 장치.
  4. 제3항에 있어서, 상기 용량절연막의 끝부분이 상기 하부전극의 끝부분과 동일위치에 있는 것을 특징으로 하는 반도체 장치.
  5. 제3항에 있어서, 상기 용량절연막의 끝부분이 상기 하부전극의 끝부분의 바깥쪽으로 비어져나와 있는 것을 특징으로 하는 반도체 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960023033A 1995-06-22 1996-06-22 반도체장치 KR100263396B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP15592095A JP3246274B2 (ja) 1995-06-22 1995-06-22 半導体装置
JP95-155920 1995-06-22

Publications (2)

Publication Number Publication Date
KR970003929A true KR970003929A (ko) 1997-01-29
KR100263396B1 KR100263396B1 (ko) 2000-08-01

Family

ID=15616408

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960023033A KR100263396B1 (ko) 1995-06-22 1996-06-22 반도체장치

Country Status (5)

Country Link
US (1) US6046467A (ko)
EP (1) EP0750354A3 (ko)
JP (1) JP3246274B2 (ko)
KR (1) KR100263396B1 (ko)
CN (2) CN1143833A (ko)

Families Citing this family (13)

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US5926359A (en) 1996-04-01 1999-07-20 International Business Machines Corporation Metal-insulator-metal capacitor
JP3149817B2 (ja) * 1997-05-30 2001-03-26 日本電気株式会社 半導体装置およびその製造方法
JP3337622B2 (ja) * 1997-07-16 2002-10-21 松下電器産業株式会社 選択的エッチング液及びそのエッチング液を用いた半導体装置の製造方法
US20010013660A1 (en) 1999-01-04 2001-08-16 Peter Richard Duncombe Beol decoupling capacitor
KR100333641B1 (ko) * 1999-06-30 2002-04-24 박종섭 하부전극 손상을 방지할 수 있는 강유전체 메모리 소자의 캐패시터 형성 방법
DE10217565A1 (de) * 2002-04-19 2003-11-13 Infineon Technologies Ag Halbleiterbauelement mit integrierter gitterförmiger Kapazitätsstruktur
US7102367B2 (en) * 2002-07-23 2006-09-05 Fujitsu Limited Probe card and testing method of semiconductor chip, capacitor and manufacturing method thereof
US20150097228A1 (en) * 2013-10-07 2015-04-09 Nanya Technology Corporation Method for manufacturing semiconductor device
US9391016B2 (en) * 2014-04-10 2016-07-12 Taiwan Semiconductor Manufacturing Co., Ltd. MIM capacitor structure
US9368392B2 (en) 2014-04-10 2016-06-14 Taiwan Semiconductor Manufacturing Co., Ltd. MIM capacitor structure
US9219110B2 (en) 2014-04-10 2015-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. MIM capacitor structure
US9425061B2 (en) 2014-05-29 2016-08-23 Taiwan Semiconductor Manufacturing Co., Ltd. Buffer cap layer to improve MIM structure performance
US11056556B2 (en) 2018-09-28 2021-07-06 Taiwan Semiconductor Manufacturing Co., Ltd. Metal-insulator-metal capacitive structure and methods of fabricating thereof

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JPS61174744A (ja) * 1985-01-30 1986-08-06 Nec Corp 集積回路装置およびその製造方法
US5338951A (en) * 1991-11-06 1994-08-16 Ramtron International Corporation Structure of high dielectric constant metal/dielectric/semiconductor capacitor for use as the storage capacitor in memory devices
EP0557937A1 (en) * 1992-02-25 1993-09-01 Ramtron International Corporation Ozone gas processing for ferroelectric memory circuits
US5337279A (en) * 1992-03-31 1994-08-09 National Semiconductor Corporation Screening processes for ferroelectric memory devices
DE69333864T2 (de) * 1992-06-12 2006-06-29 Matsushita Electric Industrial Co., Ltd., Kadoma Herstellungsverfahren für Halbleiterbauelement mit Kondensator
DE69315125T2 (de) * 1992-06-18 1998-06-10 Matsushita Electronics Corp Herstellungsverfahren für Halbleiterbauelement mit Kondensator
US5350705A (en) * 1992-08-25 1994-09-27 National Semiconductor Corporation Ferroelectric memory cell arrangement having a split capacitor plate structure
EP0642167A3 (en) * 1993-08-05 1995-06-28 Matsushita Electronics Corp Semiconductor device with capacitor and manufacturing process.
US5443688A (en) * 1993-12-02 1995-08-22 Raytheon Company Method of manufacturing a ferroelectric device using a plasma etching process
KR0171060B1 (ko) * 1993-12-28 1999-03-30 스기야마 카즈히코 반도체장치의 제조방법
CN1056130C (zh) * 1994-05-06 2000-09-06 清华大学 钛酸锶基晶界层电容器材料制造方法
JP3369827B2 (ja) * 1995-01-30 2003-01-20 株式会社東芝 半導体装置及びその製造方法

Also Published As

Publication number Publication date
EP0750354A2 (en) 1996-12-27
CN1627501A (zh) 2005-06-15
JPH098245A (ja) 1997-01-10
US6046467A (en) 2000-04-04
EP0750354A3 (en) 1997-05-14
JP3246274B2 (ja) 2002-01-15
CN1143833A (zh) 1997-02-26
CN100403520C (zh) 2008-07-16
KR100263396B1 (ko) 2000-08-01

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