KR960013504B1 - 미세패턴의 형성방법 - Google Patents
미세패턴의 형성방법 Download PDFInfo
- Publication number
- KR960013504B1 KR960013504B1 KR1019900017013A KR900017013A KR960013504B1 KR 960013504 B1 KR960013504 B1 KR 960013504B1 KR 1019900017013 A KR1019900017013 A KR 1019900017013A KR 900017013 A KR900017013 A KR 900017013A KR 960013504 B1 KR960013504 B1 KR 960013504B1
- Authority
- KR
- South Korea
- Prior art keywords
- resist
- photoresist
- exposure
- chip equivalent
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/948—Radiation resist
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (5)
- 제1칩상당영역(12,22,23)과 제2칩상당영역(13,23,33)을 갖춘 웨이퍼(11,21,31)상에 제1포토레지스트를 도포하는 공정과, 상기 제1포토레지스트의 상기 제1칩상당영역(12,22,32)상의 부분만을 노광 및 현상하는 공정, 노광 및 현상된 상기 제1포토레지스트를 마스크로서 상기 제1칩상당영역(12,22,32)을 이방성 에칭하는 공정, 상기 제1포토레지스트를 제거하는 공정, 상기 웨이퍼(11,21,31)상에 제2포토레지스트를 도포하는 공정, 상기 제2포토레지스트의 상기 제2칩상당영역(13,23,33)상의 부분만을 노광 및 현상하는 공정, 노광 및 현상된 상기 제2포토레지스트를 마스크로서 상기 제2칩상당영역(13,23,33)을 이방성 에칭하느 공정 및, 상기 제2포토레지스트를 제거하는 공정을 구비하여 이루어진 것을 특징으로 하는 미세패턴의 형성방법.
- 제1항에 있어서, 상기 제1칩상당영역(12)과 상기 제2칩상당영역(13)이 상기 웨이퍼(11)상에 소나무 모양 형상으로 배치되어 있는 것을 특징으로 하는 미세패턴의 형성방법.
- 제1항에 있어서, 상기 제1칩상당영역(33)과 상기 제2칩상당영역(33)이 상기 웨이퍼(31)상에 1열씩 배치되어 있는 것을 특징으로 하는 미세패턴의 형성방법.
- 제1항에 있어서, 상기 제1칩상당영역(22)과 상기 제2칩상당영역(23)이 상기 웨이퍼(21)상에 1열씩 배치되어 있는 것을 특징으로 하는 미세패턴의 형성방법.
- 웨이퍼(41)상에 레지스트를 도포하는 공정과 래티클을 이용해서 상기 레지스트를 노광한 후에 상기 레지스트를 현상하는 공정 및, 노광 및 현상된 상기 포토레지스트를 마스크로 이용하여 상기 웨이퍼를 이방성 에칭하는 공정을 구비하여 이루어진 미세패턴의 형성방법에 있어서, 상기 래티클은 상기 웨이퍼(41)에 형성되는 복수의 칩상당영역(42)에 대응하는 복수의 노광부분과, 상기 복수의 칩상당영역(42)간의 영역(53)에 대응해서 상기 복수의 노광부분간에 설치된 비노광부분을 갖춘 것을 특징으로 하는 미세패턴의 형성방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1276014A JPH03139821A (ja) | 1989-10-25 | 1989-10-25 | 微細パターンの形成方法 |
JP1-276014 | 1989-10-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR910008807A KR910008807A (ko) | 1991-05-31 |
KR960013504B1 true KR960013504B1 (ko) | 1996-10-05 |
Family
ID=17563585
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900017013A Expired - Fee Related KR960013504B1 (ko) | 1989-10-25 | 1990-10-24 | 미세패턴의 형성방법 |
Country Status (3)
Country | Link |
---|---|
US (1) | US5100508A (ko) |
JP (1) | JPH03139821A (ko) |
KR (1) | KR960013504B1 (ko) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3027990B2 (ja) * | 1991-03-18 | 2000-04-04 | 富士通株式会社 | 半導体装置の製造方法 |
US5258098A (en) * | 1991-06-17 | 1993-11-02 | Cycam, Inc. | Method of production of a surface adapted to promote adhesion |
IT1251393B (it) * | 1991-09-04 | 1995-05-09 | St Microelectronics Srl | Procedimento per la realizzazione di strutture metrologiche particolarmente per l'analisi dell'accuratezza di strumenti di misura di allineamento su substrati processati. |
US5338397A (en) * | 1993-10-01 | 1994-08-16 | Motorola, Inc. | Method of forming a semiconductor device |
KR0128828B1 (ko) * | 1993-12-23 | 1998-04-07 | 김주용 | 반도체 장치의 콘택홀 제조방법 |
US5533634A (en) * | 1994-09-01 | 1996-07-09 | United Microelectronics Corporation | Quantum chromeless lithography |
US5876883A (en) * | 1995-12-27 | 1999-03-02 | Vlsi Technology, Inc. | Method forming focus/exposure matrix on a wafer using overlapped exposures |
US6087263A (en) | 1998-01-29 | 2000-07-11 | Micron Technology, Inc. | Methods of forming integrated circuitry and integrated circuitry structures |
US6136517A (en) * | 1998-03-06 | 2000-10-24 | Raytheon Company | Method for photo composition of large area integrated circuits |
US6593064B1 (en) * | 1998-06-19 | 2003-07-15 | Creo Inc. | High resolution optical stepper |
JP2000173897A (ja) * | 1998-12-08 | 2000-06-23 | Mitsubishi Electric Corp | 露光精度制御方法、装置および記録媒体 |
US6204187B1 (en) * | 1999-01-06 | 2001-03-20 | Infineon Technologies North America, Corp. | Contact and deep trench patterning |
JP2001147515A (ja) * | 1999-09-07 | 2001-05-29 | Ricoh Co Ltd | フォトマスク設計方法、フォトマスク設計装置、コンピュータ読取可能な記憶媒体、フォトマスク、フォトレジスト、感光性樹脂、基板、マイクロレンズ及び光学素子 |
US6599322B1 (en) * | 2001-01-25 | 2003-07-29 | Tecomet, Inc. | Method for producing undercut micro recesses in a surface, a surgical implant made thereby, and method for fixing an implant to bone |
US6620332B2 (en) | 2001-01-25 | 2003-09-16 | Tecomet, Inc. | Method for making a mesh-and-plate surgical implant |
US7018418B2 (en) * | 2001-01-25 | 2006-03-28 | Tecomet, Inc. | Textured surface having undercut micro recesses in a surface |
KR100741110B1 (ko) * | 2006-02-15 | 2007-07-19 | 삼성에스디아이 주식회사 | 광 파이버 및 플라즈마 디스플레이 패널의 전극 형성 방법 |
JP2009135169A (ja) * | 2007-11-29 | 2009-06-18 | Tokyo Electron Ltd | 基板処理システムおよび基板処理方法 |
JP4906141B2 (ja) * | 2010-03-29 | 2012-03-28 | 東京エレクトロン株式会社 | 基板処理システム |
JP4906140B2 (ja) * | 2010-03-29 | 2012-03-28 | 東京エレクトロン株式会社 | 基板処理システム |
CN104122756B (zh) * | 2013-04-28 | 2016-12-28 | 无锡华润上华科技有限公司 | 判断光刻版套刻精度一致性的方法和光刻机 |
US10687956B2 (en) | 2014-06-17 | 2020-06-23 | Titan Spine, Inc. | Corpectomy implants with roughened bioactive lateral surfaces |
KR102367248B1 (ko) * | 2015-05-12 | 2022-02-25 | 삼성디스플레이 주식회사 | 터치 스크린 패널 |
TWI726940B (zh) | 2015-11-20 | 2021-05-11 | 美商泰坦脊柱股份有限公司 | 積層製造整形外科植入物之方法 |
CN109688979A (zh) | 2016-08-03 | 2019-04-26 | 泰坦脊椎公司 | 增强骨诱导的植入物表面 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3607267A (en) * | 1967-10-09 | 1971-09-21 | Motorola Inc | Precision alignment of photographic masks |
US3615463A (en) * | 1968-11-19 | 1971-10-26 | Ibm | Process of producing an array of integrated circuits on semiconductor substrate |
-
1989
- 1989-10-25 JP JP1276014A patent/JPH03139821A/ja active Granted
-
1990
- 1990-10-23 US US07/600,765 patent/US5100508A/en not_active Expired - Lifetime
- 1990-10-24 KR KR1019900017013A patent/KR960013504B1/ko not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5100508A (en) | 1992-03-31 |
JPH0574209B2 (ko) | 1993-10-18 |
JPH03139821A (ja) | 1991-06-14 |
KR910008807A (ko) | 1991-05-31 |
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