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KR960002823A - - Google Patents

Info

Publication number
KR960002823A
KR960002823A KR19950016333A KR19950016333A KR960002823A KR 960002823 A KR960002823 A KR 960002823A KR 19950016333 A KR19950016333 A KR 19950016333A KR 19950016333 A KR19950016333 A KR 19950016333A KR 960002823 A KR960002823 A KR 960002823A
Authority
KR
South Korea
Application number
KR19950016333A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR960002823A publication Critical patent/KR960002823A/ko

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/50—Peripheral circuit region structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
KR19950016333A 1994-06-28 1995-06-20 KR960002823A (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16905094A JP4037470B2 (ja) 1994-06-28 1994-06-28 半導体装置

Publications (1)

Publication Number Publication Date
KR960002823A true KR960002823A (ko) 1996-01-26

Family

ID=15879406

Family Applications (1)

Application Number Title Priority Date Filing Date
KR19950016333A KR960002823A (ko) 1994-06-28 1995-06-20

Country Status (5)

Country Link
US (4) US5654577A (ko)
JP (1) JP4037470B2 (ko)
KR (1) KR960002823A (ko)
CN (1) CN1051644C (ko)
TW (1) TW377510B (ko)

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* Cited by examiner, † Cited by third party
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JP4037470B2 (ja) * 1994-06-28 2008-01-23 エルピーダメモリ株式会社 半導体装置
US6292424B1 (en) 1995-01-20 2001-09-18 Kabushiki Kaisha Toshiba DRAM having a power supply voltage lowering circuit
JP3274306B2 (ja) * 1995-01-20 2002-04-15 株式会社東芝 半導体集積回路装置
US7705383B2 (en) * 1995-09-20 2010-04-27 Micron Technology, Inc. Integrated circuitry for semiconductor memory
US6967369B1 (en) * 1995-09-20 2005-11-22 Micron Technology, Inc. Semiconductor memory circuitry
US5753956A (en) * 1996-01-11 1998-05-19 Micron Technology, Inc. Semiconductor processing methods of forming complementary metal oxide semiconductor memory and other circuitry, and memory and other circuitry
US6750527B1 (en) 1996-05-30 2004-06-15 Kabushiki Kaisha Toshiba Semiconductor integrated circuit device having a plurality of wells, test method of testing the semiconductor integrated circuit device, and test device which executes the test method
JP4041156B2 (ja) * 1996-05-30 2008-01-30 株式会社東芝 半導体集積回路装置の検査方法
JP3600393B2 (ja) * 1997-02-10 2004-12-15 株式会社東芝 半導体装置及びその製造方法
WO1998058382A1 (en) * 1997-06-16 1998-12-23 Hitachi, Ltd. Semiconductor integrated circuit device
US6040605A (en) * 1998-01-28 2000-03-21 Hitachi, Ltd. Semiconductor memory device
JPH11214640A (ja) 1998-01-28 1999-08-06 Hitachi Ltd 半導体記憶素子、半導体記憶装置とその制御方法
US6284316B1 (en) * 1998-02-25 2001-09-04 Micron Technology, Inc. Chemical vapor deposition of titanium
JP3733252B2 (ja) * 1998-11-02 2006-01-11 セイコーエプソン株式会社 半導体記憶装置及びその製造方法
US6522587B1 (en) 1999-06-23 2003-02-18 Seiko Epson Corporation Non-volatile semiconductor memory devices
JP2001007227A (ja) 1999-06-23 2001-01-12 Seiko Epson Corp 不揮発性半導体記憶装置
JP3743486B2 (ja) 1999-06-23 2006-02-08 セイコーエプソン株式会社 不揮発性メモリトランジスタを含む半導体装置の製造方法
JP2001060674A (ja) * 1999-08-20 2001-03-06 Seiko Epson Corp 不揮発性メモリトランジスタを含む半導体装置
JP3587100B2 (ja) 1999-09-17 2004-11-10 セイコーエプソン株式会社 不揮発性メモリトランジスタを含む半導体装置の製造方法
US7941675B2 (en) * 2002-12-31 2011-05-10 Burr James B Adaptive power control
US7112978B1 (en) 2002-04-16 2006-09-26 Transmeta Corporation Frequency specific closed loop feedback control of integrated circuits
JP4489345B2 (ja) 2002-12-13 2010-06-23 株式会社ルネサステクノロジ 半導体装置の製造方法
US7953990B2 (en) 2002-12-31 2011-05-31 Stewart Thomas E Adaptive power control based on post package characterization of integrated circuits
US7228242B2 (en) 2002-12-31 2007-06-05 Transmeta Corporation Adaptive power control based on pre package characterization of integrated circuits
WO2004112145A1 (ja) * 2003-06-10 2004-12-23 Fujitsu Limited パンチスルー耐性を向上させた半導体集積回路装置およびその製造方法、低電圧トランジスタと高電圧トランジスタとを含む半導体集積回路装置
JP2005092963A (ja) * 2003-09-16 2005-04-07 Renesas Technology Corp 不揮発性記憶装置
US7129771B1 (en) 2003-12-23 2006-10-31 Transmeta Corporation Servo loop for well bias voltage source
US7012461B1 (en) 2003-12-23 2006-03-14 Transmeta Corporation Stabilization component for a substrate potential regulation circuit
US7692477B1 (en) 2003-12-23 2010-04-06 Tien-Min Chen Precise control component for a substrate potential regulation circuit
US7649402B1 (en) * 2003-12-23 2010-01-19 Tien-Min Chen Feedback-controlled body-bias voltage source
TWI237402B (en) * 2004-03-24 2005-08-01 Epistar Corp High luminant device
US7774625B1 (en) 2004-06-22 2010-08-10 Eric Chien-Li Sheng Adaptive voltage control by accessing information stored within and specific to a microprocessor
US7562233B1 (en) 2004-06-22 2009-07-14 Transmeta Corporation Adaptive control of operating and body bias voltages
US20060104101A1 (en) * 2004-11-17 2006-05-18 Wen-Lin Chen Memory and related manufacturing method thereof
US7141998B1 (en) * 2005-05-19 2006-11-28 International Business Machines Corporation Method and apparatus for burn-in optimization
JP4803756B2 (ja) * 2008-02-18 2011-10-26 ルネサスエレクトロニクス株式会社 半導体集積回路装置
US8421438B2 (en) * 2010-06-07 2013-04-16 Skyworks Solutions, Inc. Apparatus and method for diffusion sensing
JP2021149659A (ja) * 2020-03-19 2021-09-27 キオクシア株式会社 半導体集積回路、メモリコントローラ、およびメモリシステム

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JPS60249584A (ja) * 1984-05-25 1985-12-10 アイシン精機株式会社 ロボツトハンドの芯出し装置
JPS61231740A (ja) * 1985-04-05 1986-10-16 Sumitomo Metal Mining Co Ltd ハーメチックシールカバーの製造方法
US5148255A (en) * 1985-09-25 1992-09-15 Hitachi, Ltd. Semiconductor memory device
US5324982A (en) * 1985-09-25 1994-06-28 Hitachi, Ltd. Semiconductor memory device having bipolar transistor and structure to avoid soft error
JPH0671067B2 (ja) 1985-11-20 1994-09-07 株式会社日立製作所 半導体装置
JPH0685422B2 (ja) 1985-11-07 1994-10-26 三菱電機株式会社 半導体集積回路
JPS6386559A (ja) 1986-09-30 1988-04-16 Toshiba Corp 半導体記憶装置
US4751679A (en) * 1986-12-22 1988-06-14 Motorola, Inc. Gate stress test of a MOS memory
JPH0830028B2 (ja) * 1987-06-15 1996-03-27 ダイキン工業株式会社 含フッ素脂環式化合物及びその製造法
DE3855945T2 (de) * 1987-07-10 1997-11-13 Toshiba Kawasaki Kk Halbleiterbauelement mit Bereichen unterschiedlicher Störstellenkonzentration
JPH01193507A (ja) * 1988-01-27 1989-08-03 Hitachi Ltd 負荷急減時の脱気器の圧力および水位制御装置
JPH0229140A (ja) * 1988-07-19 1990-01-31 Toshiba Corp 受信データ復調方式
JPH01231740A (ja) * 1988-12-28 1989-09-18 Toshiba Corp 画像形成装置
JPH02264462A (ja) 1989-04-05 1990-10-29 Mitsubishi Electric Corp 半導体集積回路装置
JPH0358475A (ja) 1989-07-26 1991-03-13 Sony Corp 半導体メモリ
JPH0383289A (ja) 1989-08-25 1991-04-09 Nec Corp Ｍｏｓ型半導体記憶装置
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Also Published As

Publication number Publication date
US6078084A (en) 2000-06-20
TW377510B (en) 1999-12-21
JP4037470B2 (ja) 2008-01-23
US5654577A (en) 1997-08-05
JPH0817941A (ja) 1996-01-19
US20020080669A1 (en) 2002-06-27
US20040184330A1 (en) 2004-09-23
CN1128902A (zh) 1996-08-14
US6906971B2 (en) 2005-06-14
CN1051644C (zh) 2000-04-19

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Legal Events

Date Code Title Description
A201 Request for examination
E801 Decision on dismissal of amendment
J301 Trial decision

Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE AMENDMENT REQUESTED 20020729

Effective date: 20021218

E902 Notification of reason for refusal
E601 Decision to refuse application