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KR940027090A - 가공품의 습식화학적 처리방법. - Google Patents

가공품의 습식화학적 처리방법. Download PDF

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Publication number
KR940027090A
KR940027090A KR1019940010141A KR19940010141A KR940027090A KR 940027090 A KR940027090 A KR 940027090A KR 1019940010141 A KR1019940010141 A KR 1019940010141A KR 19940010141 A KR19940010141 A KR 19940010141A KR 940027090 A KR940027090 A KR 940027090A
Authority
KR
South Korea
Prior art keywords
workpiece
solution
chemical treatment
wet chemical
medium
Prior art date
Application number
KR1019940010141A
Other languages
English (en)
Other versions
KR0140480B1 (ko
Inventor
쉬타들러 막스
쉬바브 균터
로메데르 페터
Original Assignee
스타우디글, 게.시르베
와커-헤미트로닉 게셀샤프트 퓌르 엘렉트로닉 그룬드스토프 엠베하
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 스타우디글, 게.시르베, 와커-헤미트로닉 게셀샤프트 퓌르 엘렉트로닉 그룬드스토프 엠베하 filed Critical 스타우디글, 게.시르베
Publication of KR940027090A publication Critical patent/KR940027090A/ko
Application granted granted Critical
Publication of KR0140480B1 publication Critical patent/KR0140480B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F25/00—Flow mixers; Mixers for falling materials, e.g. solid particles
    • B01F25/50—Circulation mixers, e.g. wherein at least part of the mixture is discharged from and reintroduced into a receptacle
    • B01F25/51—Circulation mixers, e.g. wherein at least part of the mixture is discharged from and reintroduced into a receptacle in which the mixture is circulated through a set of tubes, e.g. with gradual introduction of a component into the circulating flow
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/102—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration with means for agitating the liquid

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Cleaning By Liquid Or Steam (AREA)

Abstract

이 발명은 용액중에 가스버블을 군일분산시켜 발생한 가스화 처리매질의 흐름에 가공품을 노출시켜 처리하는 가공품, 특히 반도체 웨이퍼의 습식-화학적 처리방법이다.

Description

가공품의 습식화학적 처리방법.
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1a는 이 발명에 의한 대비실시예의 개략도, 제1b도는 이 발명에 의한 실시예의 개략도.

Claims (3)

  1. 가공품(werkpieces)을 가스화 처리매질의 흐름에 노출시켜 처리하는 가공품, 특히 반도체 웨이퍼의 습식 화학적 처리방법에 있어서, 용액 중에서 가스버블(gas bubbles)을 균일 분산시켜 그 처리매질을 발생시킴을 특징으로 하는 위 방법.
  2. 제1항에 있어서, 그 추진매질은 그 용액중에 가스를 균일 분산시키는 공급펌프에 의해 발생함을 특징으로 하는 위 방법.
  3. 제1항에 있어서, 그 가공품 방향의 속도성분에 대하여 추진매질에서 용액과 가스버블의 상대속도는 0(zero) 또는 거의 0(zero)임을 특징으로 하는 위 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940010141A 1993-05-13 1994-05-09 가공품의 습식 화학적 처리방법 KR0140480B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE4316096A DE4316096C1 (de) 1993-05-13 1993-05-13 Verfahren zur naßchemischen Behandlung scheibenförmiger Werkstücke
DE93-P4316096.4 1993-05-13

Publications (2)

Publication Number Publication Date
KR940027090A true KR940027090A (ko) 1994-12-10
KR0140480B1 KR0140480B1 (ko) 1998-07-15

Family

ID=6488049

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940010141A KR0140480B1 (ko) 1993-05-13 1994-05-09 가공품의 습식 화학적 처리방법

Country Status (10)

Country Link
US (1) US5451267A (ko)
EP (1) EP0625795B1 (ko)
JP (1) JP2687280B2 (ko)
KR (1) KR0140480B1 (ko)
CN (1) CN1031852C (ko)
DE (2) DE4316096C1 (ko)
FI (1) FI942152L (ko)
MY (1) MY110704A (ko)
RU (1) RU2099812C1 (ko)
TW (1) TW268134B (ko)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
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JPH08172068A (ja) * 1994-12-19 1996-07-02 Fujitsu Ltd 半導体基板の洗浄方法及び半導体装置の製造方法
KR100226548B1 (ko) * 1996-12-24 1999-10-15 김영환 웨이퍼 습식 처리 장치
US5904156A (en) * 1997-09-24 1999-05-18 International Business Machines Corporation Dry film resist removal in the presence of electroplated C4's
US6319331B1 (en) * 1997-12-01 2001-11-20 Mitsubishi Denki Kabushiki Kaisha Method for processing semiconductor substrate
US6273107B1 (en) * 1997-12-05 2001-08-14 Texas Instruments Incorporated Positive flow, positive displacement rinse tank
EP1564796A1 (en) * 1997-12-09 2005-08-17 Shin-Etsu Handotai Company Limited Semiconductor wafer processing method and semiconductor wafers produced by the same
DE19833257C1 (de) * 1998-07-23 1999-09-30 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe
US6273100B1 (en) 1998-08-27 2001-08-14 Micron Technology, Inc. Surface cleaning apparatus and method
US6372051B1 (en) * 1998-12-04 2002-04-16 Texas Instruments Incorporated Positive flow, positive displacement rinse tank
DE19927527B4 (de) * 1999-06-16 2007-02-08 Siltronic Ag Verfahren zur naßchemischen Behandlung einer Halbleiterscheibe
DE19927457C2 (de) * 1999-06-16 2002-06-13 Wacker Siltronic Halbleitermat Verwendung eines bekannten Verfahrens als Vorbehandlung zur Bestimmung der Diffusionslängen von Minoritätsträgern in einer Halbleiterscheibe
US6488037B1 (en) * 1999-08-31 2002-12-03 Texas Instruments Incorporated Programmable physical action during integrated circuit wafer cleanup
DE19943101C2 (de) * 1999-09-09 2002-06-20 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer gebondeten Halbleiterscheibe
DE19953152C1 (de) * 1999-11-04 2001-02-15 Wacker Siltronic Halbleitermat Verfahren zur naßchemischen Oberflächenbehandlung einer Halbleiterscheibe
DE10002354A1 (de) 2000-01-20 2001-08-09 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe
DE10031603C2 (de) * 2000-06-29 2002-06-13 Wacker Siltronic Halbleitermat Verfahren zur Herstellung mindestens einer Halbleiterscheibe durch Ätzen
DE10064081C2 (de) * 2000-12-21 2002-06-06 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe
KR100432495B1 (ko) * 2001-12-28 2004-05-22 주식회사 실트론 실리콘 웨이퍼 에칭장치
US20040050261A1 (en) * 2002-09-12 2004-03-18 Boutiette Paul K. Device and method for washing eggs
DE10302611B4 (de) * 2003-01-23 2011-07-07 Siltronic AG, 81737 Polierte Halbleiterscheibe und Verfahren zu deren Herstellung und Anordnung bestehend aus einer Halbleiterscheibe und einem Schild
CN1791793B (zh) * 2003-05-22 2010-12-15 皇家飞利浦电子股份有限公司 至少一个光学元件的清洁方法和装置
DE10328845B4 (de) * 2003-06-26 2005-10-20 Siltronic Ag Verfahren zur Oberflächenbehandlung einer Halbleiterscheibe
JP4869957B2 (ja) 2006-03-22 2012-02-08 大日本スクリーン製造株式会社 基板処理装置
CN101423619B (zh) * 2008-06-06 2011-02-09 东莞劲胜精密组件股份有限公司 塑胶件表面清洁方法
JP4841604B2 (ja) * 2008-09-30 2011-12-21 三菱電機株式会社 微細気泡供給装置および液体処理装置
JP5666086B2 (ja) * 2008-12-25 2015-02-12 ジルトロニック アクチエンゲゼルシャフトＳｉｌｔｒｏｎｉｃ ＡＧ シリコンウェハ洗浄装置
DE102009037281B4 (de) * 2009-08-12 2013-05-08 Siltronic Ag Verfahren zur Herstellung einer polierten Halbleiterscheibe
JP4567808B1 (ja) * 2010-01-27 2010-10-20 小嶺機械株式会社 食品洗浄装置
US11532493B2 (en) * 2018-07-30 2022-12-20 Taiwan Semiconductor Manufacturing Co., Ltd. Wet bench and chemical treatment method using the same
CN109127564A (zh) * 2018-08-28 2019-01-04 郭来振 一种离心式高效中草药清洗装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE417507C (de) * 1925-08-11 Chem Fab Niederrhein G M B H F Verfahren zur Behandlung von Fluessigkeiten mit Gasen
JPS5928613B2 (ja) * 1980-10-09 1984-07-14 日本鉱業株式会社 反応装置
US4687523A (en) * 1985-08-16 1987-08-18 Mobil Oil Corporation Method for cleaning a core sample from a subterranean formation of solid contaminant particles
JPS6269612A (ja) * 1985-09-24 1987-03-30 Hitachi Ltd 処理装置
GB2207890B (en) * 1987-08-14 1991-05-01 Stc Plc Etching apparatus
DE3805076A1 (de) * 1988-02-18 1989-08-31 Holzer Walter Aetzanlage
JPH0644098Y2 (ja) * 1989-02-27 1994-11-14 黒谷 信子 半導体ウェハーの洗浄用バブラー
US5261966A (en) * 1991-01-28 1993-11-16 Kabushiki Kaisha Toshiba Method of cleaning semiconductor wafers using mixer containing a bundle of gas permeable hollow yarns

Also Published As

Publication number Publication date
TW268134B (ko) 1996-01-11
RU94016182A (ru) 1996-07-10
KR0140480B1 (ko) 1998-07-15
FI942152L (fi) 1994-11-14
FI942152A0 (fi) 1994-05-10
MY110704A (en) 1999-01-30
RU2099812C1 (ru) 1997-12-20
JPH0714815A (ja) 1995-01-17
US5451267A (en) 1995-09-19
DE59400669D1 (de) 1996-10-24
DE4316096C1 (de) 1994-11-10
CN1031852C (zh) 1996-05-22
EP0625795A1 (de) 1994-11-23
CN1095187A (zh) 1994-11-16
EP0625795B1 (de) 1996-09-18
JP2687280B2 (ja) 1997-12-08

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