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CN1095187A - 工件的湿化学处理方法 - Google Patents

工件的湿化学处理方法 Download PDF

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CN1095187A
CN1095187A CN94105740A CN94105740A CN1095187A CN 1095187 A CN1095187 A CN 1095187A CN 94105740 A CN94105740 A CN 94105740A CN 94105740 A CN94105740 A CN 94105740A CN 1095187 A CN1095187 A CN 1095187A
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CN1031852C (zh
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马克斯·施塔勒
冈特·施瓦布
彼得·罗米德
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F25/00—Flow mixers; Mixers for falling materials, e.g. solid particles
    • B01F25/50—Circulation mixers, e.g. wherein at least part of the mixture is discharged from and reintroduced into a receptacle
    • B01F25/51—Circulation mixers, e.g. wherein at least part of the mixture is discharged from and reintroduced into a receptacle in which the mixture is circulated through a set of tubes, e.g. with gradual introduction of a component into the circulating flow
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/102—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration with means for agitating the liquid

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Abstract

本发明涉及一种对工件，特别是半导体晶片，实 施湿化学处理的方法，其是将工件暴露于经充气的处 理介质流体中，该经充气的处理介质流体，是将气泡 均匀地分散于一液体内而生成。

Description

本发明涉及一种工件，特别是半导体晶片，的湿化学处理方法，其中，将工件暴露于充气的处理介质流体中。
US-5，014，727专利说明书披露了一种用以清洗半导体晶片的装置，其是将半导体晶片堆置在一支架上，彼此不相接触;将该支架浸渍于一含有清洗液的槽内;利用一泵将自槽中溢出的液体经由槽底的过滤器送回槽内，使得半导体晶片得以暴露于一液态流体中。在槽底上支架的下方有一气泡发生器，其可将气泡吹入液体以达到混合的目的。
该装置以及利用该装置实施的方法的缺点是：液体内气泡的分布不均匀，以致局部流动状况有差异。所以，清洗液流经半导体晶片时亦不均匀，即强度有差异。除处理工作的清洁作用外，若该液体和/或该气体具有蚀刻处理以及剥除材质的功能，则工件表面的处理效果将随部位的不同有所变化，此乃出乎意料的不良现象。
所以，本发明的目的是开发一种方法，其可确实克服上述的缺点，并保证对工件，特别是半导体晶片，表面上每一部分都能进行均匀的湿化学处理。
上述目的是通过将工件暴露于充气的处理介质流体中，对工件，特别是半导体晶片，实施湿化学处理的方法而达到的，该方法包括：将气泡均匀地分散于液体内以产生处理介质。
就本发明而论，所谓“均匀地分散”是指：按随机取样法所选的处理介质的任何样体内，液体中的气泡浓度几乎相同。此外，已经发现，特别有利的是，若液体中分散的气泡尽可能的小，因而所受浮力甚低，且其向工件方向的分速度对液体的相对速度为零或几乎为零。
就本发明而论，产生合适的处理介质的非常有效的装置是可推动气体及液体的进料泵。若泵的进料侧供有气体及液体，则该气体及液体在泵中进行彻底混合。泵之出料侧所送出的液体中则均匀地散布着微细气泡。与利用气泡发生器送入气泡的液体相比较，本处理介质则具有较佳的性能。于后一案例中，气泡经由液体作回旋运动，因而与其混合。若气泡分散得极为均匀，局部流动差异将不再发生。在此情况下，因分散的气体已与液体适度地混合，液体无需再作进一步的混合。
该项差异特别在湿化学处理半导体晶片时获得验证。工件表面的处理必须尽可能地均匀一致，例如，在对半导体晶片的清洗，尤其是在湿化学处理以达到材质剥除效果时，如对半导体晶片实施湿化学蚀刻的案例。因此，于诸多昂贵的成形步骤，例如，半导体晶片的研磨、光或圆边之后，经带有表面附近晶格内的损坏部分必须予以除去。本发明的方法可确保材质的剥除极为均匀一致，且经由机械加工所形成的晶片几何形状保持不变。
本发明方法虽是特别用作半导体晶片的湿化学处理，但其用途并非仅限于该类工件。假若需要特别均匀的处理，例如：对玻璃及塑胶材料的湿化学处理，其优点亦可加以利用。
此外，很惊奇地发现，如果所述的处理介质是按照本发明方法产生的，则半导体工件的湿化学清洗和/或蚀刻的速率大大加快。
因此，半导体晶片以及其他的半导体工件，例如半导体晶棒，颗粒状半导体材料，块状（1umpy）半导体材料以及半导体材料成形体用本发明方法进行处理是有利的。
实施本发明方法特别适用的进料泵，是可将进入的处理液体予以强力加速的泵，优选的是离心泵或轴流泵。
水或已知的水性清洗溶液或水性蚀刻溶液是优选使用的液体。此外，有利的是（但并不是绝对地需要）于所用液体内添加一种表面活性剂，其浓度优选为0.05至1%（体积）。表面活性剂对气泡具有稳定效果，并可延缓各个气泡开始结合形成较大气泡的时间。
举例来说，可均匀地分散于液体内的合适的气体为：惰性气体或活性气体，如：空气、氧、臭氧、氟化氢，氯化氢，一氧化二氮，氧化氮，或这些气体的混合物。
在本发明方法的优选实施例中，对半导体晶片实施湿化学处理过程期间，对半导体晶片表面的材质剥除极为均匀一致。最简单的案例是：液体本身即为一蚀刻溶液，具有材质剥除的效果。但又在液体与气体联合作用的情况下能产生此一效果，亦属可能。泵输出的处理介质，是至少经由一个入口送进处理室内，此种方式的特别处是：待处理的半导体晶片是暴露于处理介质流体中，亦即泵所喷入的处理介质是朝向半导体晶片。因此，半导体晶片是盛装于一支架内，借助于该支架，该半导体晶片得以一直停留在处理介质中，并使处理介质随时接触到半导体表面。首先将处理介质加入处理室直至足以完全淹没半导体晶片为止。
在比较实施例中，用蚀刻剂处理半导体晶片以进行材质剥离，将其与本发明的处理半导体晶片的实施例进行比较。
图1a是比较实施例的实验装置示意图，图1b是实验例的对应的实验装置示意图。
比较实施例
如图1a的装置，其包括一具有穿孔的底部10的处理室3，其中装有10片直径150毫米的硅晶片，并以水性蚀刻剂予以处理，该水性蚀刻剂含有氟化氢、硝酸及表面活性剂。为达到此项处理目标，装在支架（图中未显示）内的硅晶片1是浸渍于蚀刻剂2中。于处理晶片期间，利用一离心泵7，经由装在室底部的分配管5，将补充蚀刻剂送入处理室3。自处理室经溢流管4排出的蚀刻剂则送至泵的进料侧。于泵的出口与分配管间的蚀刻剂流路内连续不断地通以氮气6，可使处理室内的蚀刻剂得以充气。
实施例
利用比较实施例内所述的装置，处理另外10片直径为150毫米的硅晶片。与比较实施例相比较，蚀刻剂的组成、泵的转速及添加氮气的流速均保持不变。如图1b所示，与图1a相反，氮气6是送至离心泵7的进料侧。经发现：就材质剥除量来说，用本发明的方法处理晶片，其蚀刻速率是用比较实施例的方法处理晶片的二至三倍。
评价了经前述两项实施例处理过的晶片材质剥除情况。此外，晶片的平整性，亦即真实表面与理想平坦表面的偏差，则以几何参数测定、并以所谓的“局部厚度变异”（LTV）予以量化。晶片置于平坦真空托架上呈吸着状态，并以平行于晶片背面的平面作为参考平面。表内所列的局部厚度变异极大值（LTVmax）乃表面平整性的最大局部偏差，此由研究晶片表面而发现。每一晶片表面分为69个正方形面积（部位），每边长15毫米，作为局部测量区域。将两个实施例的测定值加以比较，则显示以本发明的方法处理的硅晶片，其平整性具有极大的改进。
表
Figure 941057402_IMG2

Claims (4)

1、一种对工件实施湿化学处理的方法，其中，是将工件暴露于经充气的处理介质流体中，该方法包括：将气泡均匀地分散于液体内以产生所述的处理介质。
2、如权利要求1所述的方法，其中，藉一进料泵将气体均匀地分散于液体内而产生带推动力的介质。
3、如权利要求1所述的方法，其中，就朝向工件的分速度而言，带推动力的介质内气泡对液体的相对速度为零或几乎为零。
4、如权利要求1所述的方法，其中所述的工件是从由半导体晶片、半导体晶棒、颗粒半导体材料、块状半导体材料以及半导体材料成形件组成的一组中选出的。
CN94105740A 1993-05-13 1994-05-12 工件的湿化学处理方法 Expired - Lifetime CN1031852C (zh)

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DE4316096C1 (de) 1994-11-10
MY110704A (en) 1999-01-30
EP0625795B1 (de) 1996-09-18
EP0625795A1 (de) 1994-11-23
JPH0714815A (ja) 1995-01-17
CN1031852C (zh) 1996-05-22
KR0140480B1 (ko) 1998-07-15
RU94016182A (ru) 1996-07-10

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