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KR890011193A - 감지증폭기 - Google Patents

감지증폭기 Download PDF

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Publication number
KR890011193A
KR890011193A KR1019880016624A KR880016624A KR890011193A KR 890011193 A KR890011193 A KR 890011193A KR 1019880016624 A KR1019880016624 A KR 1019880016624A KR 880016624 A KR880016624 A KR 880016624A KR 890011193 A KR890011193 A KR 890011193A
Authority
KR
South Korea
Prior art keywords
channel
mos transistor
channel mos
conduction path
gate
Prior art date
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Granted
Application number
KR1019880016624A
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English (en)
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KR930001401B1 (ko
Inventor
오사무 마츠모토
다케시 나카시로
이사오 아베
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
다케다이 마사다카
도시바마이콤엔지니어링 가부시키가이샤
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Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바, 다케다이 마사다카, 도시바마이콤엔지니어링 가부시키가이샤 filed Critical 아오이 죠이치
Publication of KR890011193A publication Critical patent/KR890011193A/ko
Application granted granted Critical
Publication of KR930001401B1 publication Critical patent/KR930001401B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/067—Single-ended amplifiers

Landscapes

  • Read Only Memory (AREA)
  • Dram (AREA)
  • Manipulation Of Pulses (AREA)

Abstract

내용 없음

Description

감지증폭기
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 1실시예에 관한 감지증폭기를 도시해 놓은 회로도.
제2도는 본 발명의 다른 실시예에 관한 감지증폭기를 도시해 놓은 회로도.
제3도는 종래의 감지증폭기를 도시해 놓은 회로도이다.

Claims (2)

  1. 피검출신호원(5)으로부터의 신호선이 첫번째 제 1챈널 MOS 트랜지스터(7)의 게이트와 챈널도전로의 일단과, 두번째 제 1 챈널 MOS 트랜지스터(8)의 챈널도전로의 일단 및, 상보형 MOS 비례회로를 구성하는 제 2챈널 MOS 트랜지스터(10)의 게이트에 각각 접속되고, 상기 상보형 MOS 비례회로를 구성하는 세번째 제 1챈널 MOS 트랜지스터(9)의 챈널도전로의 일단과 상기 제 2챈널 MOS 트랜지스터(10)의 챈널도전로의 일단과 상기 제 2챈널 NOS 트랜지스터(10)의 챈널도전로의 일단이 접속되며, 상기 첫번째 내지 세번째 제 1챈널 MOS 트랜지스터(7~9)의 챈널도전로의 타단에 제 1전위공급단(VDD)이, 상기 제2 챈널 MOS 트랜지스터(10)의 챈널도전로의 타단에 제2 전위공급단(접지)이 각각 접속되고, 두번째 및 세번째 제 1챈널 MOS 트랜지스터(8)(9)의 게이트에는 이들 각 트랜지스터를 온시켜주는 전압(접지)이 공급되어져 있도록 된 것을 특징으로 하는 감지증폭기.
  2. 피검출신호원(5)으로부터의 신호선이 첫번째 제 1챈널 MOS 트랜지스터(7)의 게이트와 챈널도전로의 일단과, 두번째 제1 챈널 MOS 트랜지스터(8)의 챈널도전로의 일단 및, 상보형 MOS 비례회로를 구성하는 세번째 제1 챈널 MOS 트랜지스터(9)의 게이트에 각각 접속되고, 상기 상보형 MOS 비례회로를 구성하는 세번째 제1 채널 MOS 트랜지스터(9)의 챈널도전로와 제 2챈널 MOS 트랜지스터 챈널도전로일단이 접속되며, 상기 첫번째 내지 세번째 제1 챈널 MOS 트랜지스터(7~9)의 챈널도전로의 타단에 제 1전위공급단(VDD)이, 상기 제2 챈널 MOS 트랜지스터(10)의 챈널도전로의 타단에 제2 전위공급단(접지)이 각각 접속되고, 두번째 제1 챈널 MOS 트랜지스터(8)의 게이트와 상기 제2 챈널 MOS 트랜지스터(10)의 게이트에는 이들 각 트랜지스터를 온시켜져 있도록 하는 전압이 공급되도록 된 것을 특징으로 하는 감지증폭기.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880016624A 1987-12-16 1988-12-14 감지 증폭기 Expired - Fee Related KR930001401B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP62317861A JPH01159897A (ja) 1987-12-16 1987-12-16 センスアンプ
JP317861 1987-12-16
JP62-317861 1987-12-16

Publications (2)

Publication Number Publication Date
KR890011193A true KR890011193A (ko) 1989-08-14
KR930001401B1 KR930001401B1 (ko) 1993-02-27

Family

ID=18092879

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880016624A Expired - Fee Related KR930001401B1 (ko) 1987-12-16 1988-12-14 감지 증폭기

Country Status (5)

Country Link
US (1) US4859882A (ko)
EP (1) EP0320779B1 (ko)
JP (1) JPH01159897A (ko)
KR (1) KR930001401B1 (ko)
DE (1) DE3882942T2 (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5204838A (en) * 1988-10-28 1993-04-20 Fuji Xerox Co., Ltd. High speed readout circuit
US5039892A (en) * 1990-06-07 1991-08-13 National Semiconductor Corporation High speed data/tri-state sense circuit
DE19527543A1 (de) * 1995-07-27 1997-01-30 Siemens Ag Halbleiterspeichervorrichtung
EP0936621B1 (en) * 1998-02-13 2006-04-26 STMicroelectronics S.r.l. Improved sense amplifier for a non volatile memory with extended supply voltage range
JP5085068B2 (ja) * 2006-07-31 2012-11-28 オンセミコンダクター・トレーディング・リミテッド センス回路

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5525858A (en) * 1978-08-11 1980-02-23 Nec Corp Memory unit
DE3264160D1 (en) * 1982-01-30 1985-07-25 Itt Ind Gmbh Deutsche Isolated gate field effect transistor circuit for sensing the voltage of a knot
US4460985A (en) * 1982-02-19 1984-07-17 International Business Machines Corporation Sense amplifier for MOS static memory array
JPS58161197A (ja) * 1982-03-19 1983-09-24 Hitachi Ltd Ｍｏｓ電界効果トランジスタメモリのセンス回路
US4535259A (en) * 1982-06-18 1985-08-13 Seeq Technology, Inc. Sense amplifier for use with a semiconductor memory array
JPS6122494A (ja) * 1984-07-10 1986-01-31 Nec Corp アクテイブプルアツプ回路
US4634890A (en) * 1984-09-06 1987-01-06 Thomson Components-Mostek Corporation Clamping circuit finding particular application between a single sided output of a computer memory and a differential amplifier sensing circuit
JPH0719475B2 (ja) * 1985-01-16 1995-03-06 日本電気株式会社 センスアンプ回路
JPS61182697A (ja) * 1985-02-08 1986-08-15 Hitachi Ltd 半導体集積回路
JPH0734316B2 (ja) * 1985-05-08 1995-04-12 セイコーエプソン株式会社 半導体メモリ回路
US4713797A (en) * 1985-11-25 1987-12-15 Motorola Inc. Current mirror sense amplifier for a non-volatile memory
JPS62195797A (ja) * 1986-02-24 1987-08-28 Hitachi Ltd 半導体記憶装置
JPS62197996A (ja) * 1986-02-24 1987-09-01 Toshiba Corp 半導体メモリのセンスアンプ
JPS62222498A (ja) * 1986-03-10 1987-09-30 Fujitsu Ltd 消去及び書き込み可能な読み出し専用メモリ
JPS62222491A (ja) * 1986-03-24 1987-09-30 Nec Corp センスアンプ
US4804871A (en) * 1987-07-28 1989-02-14 Advanced Micro Devices, Inc. Bit-line isolated, CMOS sense amplifier

Also Published As

Publication number Publication date
DE3882942D1 (de) 1993-09-09
DE3882942T2 (de) 1993-11-25
EP0320779A3 (en) 1990-03-21
KR930001401B1 (ko) 1993-02-27
JPH01159897A (ja) 1989-06-22
EP0320779A2 (en) 1989-06-21
US4859882A (en) 1989-08-22
EP0320779B1 (en) 1993-08-04

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