KR880008453A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- KR880008453A KR880008453A KR1019870009387A KR870009387A KR880008453A KR 880008453 A KR880008453 A KR 880008453A KR 1019870009387 A KR1019870009387 A KR 1019870009387A KR 870009387 A KR870009387 A KR 870009387A KR 880008453 A KR880008453 A KR 880008453A
- Authority
- KR
- South Korea
- Prior art keywords
- integrated circuit
- semiconductor integrated
- circuit device
- semiconductor
- integrated
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/221—Schottky barrier BJTs
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61292729A JPS63143867A (en) | 1986-12-08 | 1986-12-08 | Semiconductor integrated circuit device |
JP61-292729 | 1986-12-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR880008453A true KR880008453A (en) | 1988-08-31 |
KR910001718B1 KR910001718B1 (en) | 1991-03-19 |
Family
ID=17785563
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019870009387A KR910001718B1 (en) | 1986-12-08 | 1987-08-27 | Semiconductor integrated circuit devcie |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPS63143867A (en) |
KR (1) | KR910001718B1 (en) |
DE (1) | DE3741567A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110752256B (en) * | 2019-10-22 | 2021-04-06 | 深圳第三代半导体研究院 | Silicon carbide Schottky clamp transistor and preparation method thereof |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54154967A (en) * | 1978-05-29 | 1979-12-06 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor electronic device |
JPS59139681A (en) * | 1983-01-31 | 1984-08-10 | Hitachi Ltd | Schottky barrier diode |
-
1986
- 1986-12-08 JP JP61292729A patent/JPS63143867A/en active Pending
-
1987
- 1987-08-27 KR KR1019870009387A patent/KR910001718B1/en not_active IP Right Cessation
- 1987-12-08 DE DE19873741567 patent/DE3741567A1/en active Granted
Also Published As
Publication number | Publication date |
---|---|
DE3741567C2 (en) | 1992-11-19 |
DE3741567A1 (en) | 1988-06-09 |
JPS63143867A (en) | 1988-06-16 |
KR910001718B1 (en) | 1991-03-19 |
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Legal Events
Date | Code | Title | Description |
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A201 | Request for examination | ||
PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 19870827 |
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PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 19870827 Comment text: Request for Examination of Application |
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PG1501 | Laying open of application | ||
E902 | Notification of reason for refusal | ||
PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 19900825 Patent event code: PE09021S01D |
|
G160 | Decision to publish patent application | ||
PG1605 | Publication of application before grant of patent |
Comment text: Decision on Publication of Application Patent event code: PG16051S01I Patent event date: 19910218 |
|
E701 | Decision to grant or registration of patent right | ||
PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 19910618 |
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GRNT | Written decision to grant | ||
PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 19910627 Patent event code: PR07011E01D |
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