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KR840001392A - 절연 게이트형 전계효과 트랜지스터(Insulated gate field effect transistor) - Google Patents

절연 게이트형 전계효과 트랜지스터(Insulated gate field effect transistor) Download PDF

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Publication number
KR840001392A
KR840001392A KR1019820003702A KR820003702A KR840001392A KR 840001392 A KR840001392 A KR 840001392A KR 1019820003702 A KR1019820003702 A KR 1019820003702A KR 820003702 A KR820003702 A KR 820003702A KR 840001392 A KR840001392 A KR 840001392A
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South Korea
Prior art keywords
impurity
field effect
effect transistor
layer
insulated gate
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KR1019820003702A
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English (en)
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KR900004179B1 (ko
Inventor
히데오 수나미 (외 4)
Original Assignee
미쓰다 가쓰시게
가부시기 가이샤 히다찌 세이사꾸쇼
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Publication of KR840001392A publication Critical patent/KR840001392A/ko
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Publication of KR900004179B1 publication Critical patent/KR900004179B1/ko
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/605—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having significant overlap between the lightly-doped extensions and the gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/637—Lateral IGFETs having no inversion channels, e.g. buried channel lateral IGFETs, normally-on lateral IGFETs or depletion-mode lateral IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/371—Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations

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  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

내용 없음

Description

절연 게이트형 전계효과 트랜지스터(Insulated gate field effect transistor)
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 하나의 실시예를 나타내는 단면도.

Claims (8)

  1. 제1도전형의 반도체 기판과, 그 반도체 기판위의 표면영역 내에 있는 소정의 찬넬영역에 대응하여 형성되는 게이트 전극과, 그 게이트 전극과 상기 반도체 기판 사이에 퍼져있는 게이트 절연막이 있으며, 그 찬넬 영역을 사이에 둔 소스와 드레인 영역중 적어도 한쪽의 영역이 완만한 경사의 불순물 분포가 되게한 제2도전형의 불순물층으로 형성되고, 또, 상기 찬넬영역에서 장기 반도체 기판의 깊이 방향으로 표면에 가까운 곳에 제2도전형의 제1불순물 분포층을 만들고, 또 그 제1불순물 분포층보다 깊은 곳에는 제1도전형의 제2불순물 분포층을 갖게 하는 것을 특징으로 하는 절연 게이트형 전계 효과 트랜지스터.
  2. 상기 제2의 불순물 분포층에서 불순물 농도의 피이크 부분이 상기 반도체 기판의 내부에 있게 한 것을 특징으로 하는 특허청구범위 1의 절연 게이트형 전계 효과 트랜지스터.
  3. 상기 제2의 불순물 분포는 적어도 상기 제2도전형의 불순물층의 깊이와 동등한 깊이까지 분포하게 하는 것을 특징으로 하는 특허청구범위 1의 절연 게이트형 전계 효과 트랜지스터.
  4. 상기 제2도전형의 불순물층은 피이크 농도가 높고 급한 경사의 분포를 갖는 제1의 불순물층과, 피이크 농도가 상기 제1의 불순물층보다 낮고 깊이가 상기 제1의 불순물층보다 깊은 곳까지 분포하여 있는 제2의 불순물층으로 형성되어 있는 것을 특징으로 하는 특허청구범위 1의 절연 게이트형 전계 효과 트랜지스터.
  5. 상기 제1의 불순물층은 비소(As), 상기 제2의 불순물층은 인(P)의 확산에 의하여 각각 형성되는 것을 특징으로 하는 특허청구범위 4의 절연 게이트형 전계 효과 트랜지스터.
  6. 상기의 드레인 영역은 완만한 경사의 불순물 분포를 이루고 있고 제2도전형의 불순물층으로 형성되며, 상기의 소스 영역에 대응하여 형성되는 제2의 게이트 전극이 있고, 그 제2의 게이트 전극과 상기 소스영역과의 사이에는 제2 게이트 절연막이 개재(介在)하는 것을 특징으로 하는 특허청구범위 1의 절연 게이트형 전계 효과 트랜지스터.
  7. 상기의 소스 영역은 상기의 찬넬 영역과 동일한 불순물 분포를 갖는 것을 특징으로 하는 특허청구범위 6의 절연 게이트형 전계 효과 트랜지스터.
  8. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR8203702A 1981-08-24 1982-08-16 절연 게이트형 전계효과 트랜지스터 Expired KR900004179B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP56-131521 1981-08-24
JP56131521A JPS5833870A (ja) 1981-08-24 1981-08-24 半導体装置

Publications (2)

Publication Number Publication Date
KR840001392A true KR840001392A (ko) 1984-04-30
KR900004179B1 KR900004179B1 (ko) 1990-06-18

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Country Status (6)

Country Link
US (1) US4656492A (ko)
EP (1) EP0073623B1 (ko)
JP (1) JPS5833870A (ko)
KR (1) KR900004179B1 (ko)
CA (1) CA1181532A (ko)
DE (1) DE3275684D1 (ko)

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Also Published As

Publication number Publication date
EP0073623B1 (en) 1987-03-11
DE3275684D1 (en) 1987-04-16
EP0073623A2 (en) 1983-03-09
KR900004179B1 (ko) 1990-06-18
EP0073623A3 (en) 1983-11-23
US4656492A (en) 1987-04-07
CA1181532A (en) 1985-01-22
JPS5833870A (ja) 1983-02-28

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