KR102730786B1 - 캐리어 플레이트의 연마 방법, 캐리어 플레이트 및 반도체 웨이퍼의 연마 방법 - Google Patents
캐리어 플레이트의 연마 방법, 캐리어 플레이트 및 반도체 웨이퍼의 연마 방법 Download PDFInfo
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- KR102730786B1 KR102730786B1 KR1020237020997A KR20237020997A KR102730786B1 KR 102730786 B1 KR102730786 B1 KR 102730786B1 KR 1020237020997 A KR1020237020997 A KR 1020237020997A KR 20237020997 A KR20237020997 A KR 20237020997A KR 102730786 B1 KR102730786 B1 KR 102730786B1
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- polishing
- carrier plate
- abrasive
- polished
- double
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- 238000005498 polishing Methods 0.000 title claims abstract description 251
- 239000004065 semiconductor Substances 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims abstract description 35
- 239000002245 particle Substances 0.000 claims abstract description 28
- 239000007788 liquid Substances 0.000 claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 claims abstract description 14
- 239000003082 abrasive agent Substances 0.000 claims abstract description 13
- 239000006061 abrasive grain Substances 0.000 claims description 23
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 229910003460 diamond Inorganic materials 0.000 claims description 7
- 239000010432 diamond Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 239000007864 aqueous solution Substances 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 239000004094 surface-active agent Substances 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 239000000243 solution Substances 0.000 claims 1
- 238000007517 polishing process Methods 0.000 abstract description 8
- 235000012431 wafers Nutrition 0.000 description 65
- 239000011347 resin Substances 0.000 description 17
- 229920005989 resin Polymers 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 239000002002 slurry Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000004925 Acrylic resin Substances 0.000 description 6
- 229920000178 Acrylic resin Polymers 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 239000003822 epoxy resin Substances 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229920000049 Carbon (fiber) Polymers 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 229920002430 Fibre-reinforced plastic Polymers 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 229920006231 aramid fiber Polymers 0.000 description 2
- 239000004917 carbon fiber Substances 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000011151 fibre-reinforced plastic Substances 0.000 description 2
- 239000003365 glass fiber Substances 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000012783 reinforcing fiber Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 239000004760 aramid Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007561 laser diffraction method Methods 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000790 scattering method Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
- B24B37/245—Pads with fixed abrasives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
도 2는 종래예 및 발명예에 의한 연마 처리가 실시된 캐리어 플레이트를 이용하여 양면 연마 처리가 실시된 실리콘 웨이퍼의 GBIR을 나타내는 도면이다.
Claims (8)
- 반도체 웨이퍼를 보유지지하는 웨이퍼 보유지지 구멍을 구비하는 캐리어 플레이트와, 상기 캐리어 플레이트를 사이에 두고 대향하여 배치되고, 표면에 연마 패드가 형성된 상정반 및 하정반을 구비하고, 상기 캐리어 플레이트, 상기 상정반 및 상기 하정반을 상대적으로 회전시키면서 연마액을 공급함으로써, 상기 웨이퍼 보유지지 구멍에 보유지지된 반도체 웨이퍼의 표리면을 동시에 화학 기계 연마하는 양면 연마 장치에 있어서의, 상기 캐리어 플레이트를 연마하는 방법으로서,
상기 양면 연마 장치에 있어서의 상기 연마 패드로서, 입경 3㎛ 이상의 지립이 매입된 지립 함유층을 표면에 갖는 연마 패드를 이용하고,
제조 후 미사용의 연마 대상의 캐리어 플레이트를 상기 양면 연마 장치에 있어서의 상기 상정반과 상기 하정반으로 사이에 두고, 상기 연마 대상의 캐리어 플레이트, 상기 상정반 및 상기 하정반을 상대적으로 회전시키면서 연마액을 공급하여 상기 연마 대상의 캐리어 플레이트의 양면을 연마하는 것을 특징으로 하는 캐리어 플레이트의 연마 방법. - 제1항에 있어서,
상기 지립의 재료는, 알루미나 또는 다이아몬드인, 캐리어 플레이트의 연마 방법. - 제1항에 있어서,
연마액은, 지립을 포함하는 수용액, 물 또는 계면 활성제 함유 수용액인, 캐리어 플레이트의 연마 방법. - 제1항에 있어서,
상기 연마 패드는, 상기 지립 함유층의 바로 아래에, 상기 지립이 매입되어 있지 않은 지립 비함유층을 추가로 갖는, 캐리어 플레이트의 연마 방법. - 제3항에 있어서,
상기 연마 패드는, 상기 지립 함유층의 바로 아래에, 상기 지립이 매입되어 있지 않은 지립 비함유층을 추가로 갖는, 캐리어 플레이트의 연마 방법. - 삭제
- 삭제
- 삭제
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2020-214814 | 2020-12-24 | ||
JP2020214814A JP7435436B2 (ja) | 2020-12-24 | 2020-12-24 | キャリアプレートの研磨方法 |
PCT/JP2021/042696 WO2022137934A1 (ja) | 2020-12-24 | 2021-11-19 | キャリアプレートの研磨方法、キャリアプレートおよび半導体ウェーハの研磨方法 |
Publications (2)
Publication Number | Publication Date |
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KR20230110337A KR20230110337A (ko) | 2023-07-21 |
KR102730786B1 true KR102730786B1 (ko) | 2024-11-14 |
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Family Applications (1)
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KR1020237020997A Active KR102730786B1 (ko) | 2020-12-24 | 2021-11-19 | 캐리어 플레이트의 연마 방법, 캐리어 플레이트 및 반도체 웨이퍼의 연마 방법 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20240055262A1 (ko) |
JP (1) | JP7435436B2 (ko) |
KR (1) | KR102730786B1 (ko) |
CN (1) | CN116648775A (ko) |
DE (1) | DE112021006666T5 (ko) |
TW (1) | TWI811855B (ko) |
WO (1) | WO2022137934A1 (ko) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006026760A (ja) * | 2004-07-13 | 2006-02-02 | Speedfam Co Ltd | 被研磨物保持用キャリア |
JP2015174168A (ja) * | 2014-03-14 | 2015-10-05 | 信越半導体株式会社 | 両面研磨装置用キャリアの製造方法及び両面研磨装置用キャリア並びに両面研磨方法 |
JP2016198864A (ja) * | 2015-04-13 | 2016-12-01 | 信越半導体株式会社 | 両面研磨装置用のキャリアの製造方法およびウェーハの両面研磨方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS5648623U (ko) | 1979-09-18 | 1981-04-30 | ||
JP3991598B2 (ja) | 2001-02-26 | 2007-10-17 | 株式会社Sumco | ウエーハ研磨方法 |
TW581716B (en) * | 2001-06-29 | 2004-04-01 | Applied Materials Inc | Material for use in carrier and polishing pads |
JP5648623B2 (ja) | 2011-12-01 | 2015-01-07 | 信越半導体株式会社 | 両面研磨装置用キャリア及びこれを用いた両面研磨装置並びに両面研磨方法 |
CN107001913B (zh) * | 2014-06-25 | 2019-06-28 | 嘉柏微电子材料股份公司 | 胶态氧化硅化学-机械抛光组合物 |
JP6424809B2 (ja) | 2015-12-11 | 2018-11-21 | 信越半導体株式会社 | ウェーハの両面研磨方法 |
JP6443370B2 (ja) * | 2016-03-18 | 2018-12-26 | 信越半導体株式会社 | 両面研磨装置用のキャリアの製造方法およびウェーハの両面研磨方法 |
KR102608124B1 (ko) * | 2017-08-04 | 2023-11-29 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 향상된 동일 평면성을 갖는 미세복제된 폴리싱 표면 |
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2020
- 2020-12-24 JP JP2020214814A patent/JP7435436B2/ja active Active
-
2021
- 2021-11-19 WO PCT/JP2021/042696 patent/WO2022137934A1/ja active Application Filing
- 2021-11-19 DE DE112021006666.8T patent/DE112021006666T5/de active Pending
- 2021-11-19 CN CN202180086344.7A patent/CN116648775A/zh active Pending
- 2021-11-19 US US18/259,100 patent/US20240055262A1/en active Pending
- 2021-11-19 KR KR1020237020997A patent/KR102730786B1/ko active Active
- 2021-11-19 TW TW110143138A patent/TWI811855B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2006026760A (ja) * | 2004-07-13 | 2006-02-02 | Speedfam Co Ltd | 被研磨物保持用キャリア |
JP2015174168A (ja) * | 2014-03-14 | 2015-10-05 | 信越半導体株式会社 | 両面研磨装置用キャリアの製造方法及び両面研磨装置用キャリア並びに両面研磨方法 |
JP2016198864A (ja) * | 2015-04-13 | 2016-12-01 | 信越半導体株式会社 | 両面研磨装置用のキャリアの製造方法およびウェーハの両面研磨方法 |
Also Published As
Publication number | Publication date |
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CN116648775A (zh) | 2023-08-25 |
JP7435436B2 (ja) | 2024-02-21 |
DE112021006666T5 (de) | 2023-10-12 |
KR20230110337A (ko) | 2023-07-21 |
WO2022137934A1 (ja) | 2022-06-30 |
US20240055262A1 (en) | 2024-02-15 |
TW202230499A (zh) | 2022-08-01 |
TWI811855B (zh) | 2023-08-11 |
JP2022100692A (ja) | 2022-07-06 |
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