KR100223158B1 - 액티브매트릭스기판 및 그 제조방법 - Google Patents
액티브매트릭스기판 및 그 제조방법 Download PDFInfo
- Publication number
- KR100223158B1 KR100223158B1 KR1019960020300A KR19960020300A KR100223158B1 KR 100223158 B1 KR100223158 B1 KR 100223158B1 KR 1019960020300 A KR1019960020300 A KR 1019960020300A KR 19960020300 A KR19960020300 A KR 19960020300A KR 100223158 B1 KR100223158 B1 KR 100223158B1
- Authority
- KR
- South Korea
- Prior art keywords
- metal layer
- semiconductor layer
- layer
- active matrix
- matrix substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
Claims (3)
- 기판 상에 제1 금속층을 증착하는 단계와;상기 제1 금속층을 패터닝하여 게이트전극을 구비한 게이트라인 및 소스라인을 형성하는 단계와;절연층, 반도체층, 불순물 반도체층 및 제2 금속층을 연속증착하는 단계와;상기 제2 금속층, 상기 불순물 반도체층, 상기 반도체층 및 상기 절연층을 소정의 형상으로 패터닝하는 단계와;투명도전막을 증착하는 단계와;상기 투명도전막을 패터닝하여, 화소전극을 형성하는 한편, 상기 소스라인을 상기 제2 금속층과 전기적으로 연결하고, 아울러 상기 게이트라인을 사이에 두고 서로 떨어져 있는 상기 소스라인을 상호연결하고 또한 상기 제2 금속층의 전극분리영역을 노출하는 단계와;상기 제2 금속층과 상기 불순물 반도체층을 에칭하여 소스전극과 드레인전극을 형성하는 단계를 포함하여 이루어지는 박막트랜지스터를 스위칭소자로 이용하는 액티브매트릭스기판의 제조방법.
- 제 1항에 있어서, 상기 제2 금속층, 상기 불순물 반도체층, 상기 반도체층 상기 절연층의 패터닝시, 상기 제2 금속층, 상기 불순물 반도체층, 상기 반도체층 및 상기 절연층을 상기 게이트라인의 일부분 상에 더 형성하여 보조용량을 형성하는 것을 특징으로 하는 박막트랜지스터를 스위칭소자로 이용하는 액티브매트릭스기판의 제조방법.
- 기판과;기판 상에 형성되어 게이트전극을 구비한 게이트라인 및 소스라인을 이루는 제1금속층과;소정의 영역에 형성되며 절연층, 반도체층, 불순물 반도체층 및 제2 금속층으로 이루어지는 다층체와;상기 소스라인과 상기 제2 금속층의 연결부를 이루는 한편, 상기 소스라인의 연결부 및 화소전극을 이루는 투명도전막으로 이루어지는 박막트랜지스터를 스위칭소자로 이용하는 액티브매트릭스기판.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960020300A KR100223158B1 (ko) | 1996-06-07 | 1996-06-07 | 액티브매트릭스기판 및 그 제조방법 |
| US08/829,121 US5990998A (en) | 1996-06-07 | 1997-04-10 | Active matrix liquid crystal display and related method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960020300A KR100223158B1 (ko) | 1996-06-07 | 1996-06-07 | 액티브매트릭스기판 및 그 제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR980006265A KR980006265A (ko) | 1998-03-30 |
| KR100223158B1 true KR100223158B1 (ko) | 1999-10-15 |
Family
ID=19461056
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019960020300A Expired - Lifetime KR100223158B1 (ko) | 1996-06-07 | 1996-06-07 | 액티브매트릭스기판 및 그 제조방법 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US5990998A (ko) |
| KR (1) | KR100223158B1 (ko) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW491959B (en) * | 1998-05-07 | 2002-06-21 | Fron Tec Kk | Active matrix type liquid crystal display devices, and substrate for the same |
| TW480554B (en) * | 1999-07-22 | 2002-03-21 | Semiconductor Energy Lab | Semiconductor device and manufacturing method thereof |
| US7023021B2 (en) | 2000-02-22 | 2006-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
| TW507258B (en) * | 2000-02-29 | 2002-10-21 | Semiconductor Systems Corp | Display device and method for fabricating the same |
| JP4118484B2 (ja) | 2000-03-06 | 2008-07-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2001257350A (ja) | 2000-03-08 | 2001-09-21 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP4700160B2 (ja) | 2000-03-13 | 2011-06-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP4118485B2 (ja) * | 2000-03-13 | 2008-07-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4683688B2 (ja) | 2000-03-16 | 2011-05-18 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
| JP4393662B2 (ja) | 2000-03-17 | 2010-01-06 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
| US6789910B2 (en) | 2000-04-12 | 2004-09-14 | Semiconductor Energy Laboratory, Co., Ltd. | Illumination apparatus |
| TW573162B (en) * | 2000-05-05 | 2004-01-21 | Chi Mei Optoelectronics Corp | Active matrix liquid crystal device and method of making the same |
| JP4785229B2 (ja) | 2000-05-09 | 2011-10-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7633471B2 (en) | 2000-05-12 | 2009-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and electric appliance |
| KR100751177B1 (ko) * | 2000-08-08 | 2007-08-22 | 엘지.필립스 엘시디 주식회사 | 액정 표시소자 및 그의 제조방법 |
| JP2002151698A (ja) * | 2000-11-14 | 2002-05-24 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| TW525216B (en) | 2000-12-11 | 2003-03-21 | Semiconductor Energy Lab | Semiconductor device, and manufacturing method thereof |
| SG111923A1 (en) * | 2000-12-21 | 2005-06-29 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
| SG179310A1 (en) * | 2001-02-28 | 2012-04-27 | Semiconductor Energy Lab | Semiconductor device and manufacturing method thereof |
| US7071037B2 (en) | 2001-03-06 | 2006-07-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| TWI282030B (en) | 2002-03-19 | 2007-06-01 | Semiconductor Energy Lab | Liquid crystal display device and method of driving the same |
| JP2003330388A (ja) * | 2002-05-15 | 2003-11-19 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
| US7166499B2 (en) * | 2003-12-17 | 2007-01-23 | Au Optronics Corporation | Method of fabricating a thin film transistor for an array panel |
| JP4385772B2 (ja) * | 2004-01-16 | 2009-12-16 | 日立工機株式会社 | 燃焼式動力工具 |
| KR100647775B1 (ko) * | 2004-12-01 | 2006-11-23 | 엘지.필립스 엘시디 주식회사 | 박막 트랜지스터 기판 및 제조 방법 |
| KR101501699B1 (ko) * | 2007-09-19 | 2015-03-16 | 삼성디스플레이 주식회사 | 유기 박막 트랜지스터 기판 및 이의 제조 방법 |
| JP6799123B2 (ja) * | 2018-09-19 | 2020-12-09 | シャープ株式会社 | アクティブマトリクス基板およびその製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02196222A (ja) * | 1989-01-25 | 1990-08-02 | Matsushita Electric Ind Co Ltd | アクティブマトリクス基板の製造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4933296A (en) * | 1985-08-02 | 1990-06-12 | General Electric Company | N+ amorphous silicon thin film transistors for matrix addressed liquid crystal displays |
| US5148248A (en) * | 1987-10-06 | 1992-09-15 | General Electric Company | Dual dielectric field effect transistors for protected gate structures for improved yield and performance in thin film transistor matrix addressed liquid crystal displays |
| JP2655865B2 (ja) * | 1988-03-16 | 1997-09-24 | 株式会社日立製作所 | 液晶表示装置の製造方法 |
| US5346833A (en) * | 1993-04-05 | 1994-09-13 | Industrial Technology Research Institute | Simplified method of making active matrix liquid crystal display |
| KR0139346B1 (ko) * | 1994-03-03 | 1998-06-15 | 김광호 | 박막 트랜지스터 액정표시장치의 제조방법 |
| KR100303134B1 (ko) * | 1995-05-09 | 2002-11-23 | 엘지.필립스 엘시디 주식회사 | 액정표시소자및그제조방법. |
| JPH09265113A (ja) * | 1996-03-28 | 1997-10-07 | Nec Corp | アクティブマトリクス型液晶表示装置およびその製造方 法 |
-
1996
- 1996-06-07 KR KR1019960020300A patent/KR100223158B1/ko not_active Expired - Lifetime
-
1997
- 1997-04-10 US US08/829,121 patent/US5990998A/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02196222A (ja) * | 1989-01-25 | 1990-08-02 | Matsushita Electric Ind Co Ltd | アクティブマトリクス基板の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US5990998A (en) | 1999-11-23 |
| KR980006265A (ko) | 1998-03-30 |
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