JPS6481276A - Semiconductor radiation detector - Google Patents
Semiconductor radiation detectorInfo
- Publication number
- JPS6481276A JPS6481276A JP62237805A JP23780587A JPS6481276A JP S6481276 A JPS6481276 A JP S6481276A JP 62237805 A JP62237805 A JP 62237805A JP 23780587 A JP23780587 A JP 23780587A JP S6481276 A JPS6481276 A JP S6481276A
- Authority
- JP
- Japan
- Prior art keywords
- amorphous thin
- end faces
- compound semiconductor
- thin films
- radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Measurement Of Radiation (AREA)
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To give a good sensitivity characteristic and stability and to realize mass production and a low cost by a method wherein at least one heterojunction between a compound semiconductor crystal sensitive to a radiation and a specific amorphous thin film is formed. CONSTITUTION:At a semiconductor radiation detector 1, amorphous thin films 3, 4 which contain a group VI atom in the periodic table and also contain at least either a hydrogen atom or a halogen atom are hetero-joined to opposite end faces of a compound semiconductor crystal 2 which is sensitive to a radiation. Metal electrodes 5, 6 are formed on end faces opposite to the end faces coming into contact with the compound semiconductor crystal 2 of the amorphous thin films 3, 4. Due to a high degree of freedom of an amorphous junction of the amorphous thin films 3, 4, the generation of a carrier trap on the surface of a CdTe crystal is suppressed; even when an electrode is formed by using an evaporation operation whose mass productivity and controllability are excellent, it is possible to prevent a detector characteristic from being deteriorated and the sensitivity during an operation for many hours from being deteriorated due to the carrier trap.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62237805A JPS6481276A (en) | 1987-09-22 | 1987-09-22 | Semiconductor radiation detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62237805A JPS6481276A (en) | 1987-09-22 | 1987-09-22 | Semiconductor radiation detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6481276A true JPS6481276A (en) | 1989-03-27 |
Family
ID=17020673
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62237805A Pending JPS6481276A (en) | 1987-09-22 | 1987-09-22 | Semiconductor radiation detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6481276A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5070027A (en) * | 1989-02-23 | 1991-12-03 | Matsushita Electric Industrial Co., Ltd. | Method of forming a heterostructure diode |
| US8308532B2 (en) | 2007-07-13 | 2012-11-13 | Kovax Corporation | Abrasive article |
-
1987
- 1987-09-22 JP JP62237805A patent/JPS6481276A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5070027A (en) * | 1989-02-23 | 1991-12-03 | Matsushita Electric Industrial Co., Ltd. | Method of forming a heterostructure diode |
| US8308532B2 (en) | 2007-07-13 | 2012-11-13 | Kovax Corporation | Abrasive article |
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