JPS6412582A - Semiconductor radiation detector - Google Patents
Semiconductor radiation detectorInfo
- Publication number
- JPS6412582A JPS6412582A JP62169032A JP16903287A JPS6412582A JP S6412582 A JPS6412582 A JP S6412582A JP 62169032 A JP62169032 A JP 62169032A JP 16903287 A JP16903287 A JP 16903287A JP S6412582 A JPS6412582 A JP S6412582A
- Authority
- JP
- Japan
- Prior art keywords
- radiation
- semiconductor crystal
- thin films
- compound semiconductor
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To obtain excellent sensitivity characteristics and an excellent stability by forming at least one hetero-junction between a radiation-sensitive compound semiconductor crystal and an amorphous thin film. CONSTITUTION:A semiconductor radiation detector 1 is composed of a radiation- sensitive compound semiconductor crystal 2, amorphous thin films 3 and 4 provided on both the facing end surfaces of the compound semiconductor crystal 2 and metal electrodes 5 and 6 formed on the surfaces of the thin films 3 and 4 opposite to the surfaces brought into contact with the crystal 2. The thin films 3 and 4 have a function which efficiently injects carriers created in the semiconductor crystal by absorbing the radiation and, by forming the films 3 and 4 with material having a forbidden band width larger than the forbidden band width of the semiconductor 2, a function which efficiently blocks carriers injected from the electrodes 5 and 6 can be added.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62169032A JPS6412582A (en) | 1987-07-07 | 1987-07-07 | Semiconductor radiation detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62169032A JPS6412582A (en) | 1987-07-07 | 1987-07-07 | Semiconductor radiation detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6412582A true JPS6412582A (en) | 1989-01-17 |
Family
ID=15879055
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62169032A Pending JPS6412582A (en) | 1987-07-07 | 1987-07-07 | Semiconductor radiation detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6412582A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001242255A (en) * | 2000-02-28 | 2001-09-07 | Shimadzu Corp | Radiation detector and radiation imaging device |
| JP2005523438A (en) * | 2002-04-18 | 2005-08-04 | フォルシェングスツェントルム ユーリッヒ ゲゼルシャフト ミット ベシュレンクター ハフトゥング | Position-sensitive germanium detector with microstructure on both contact surfaces |
| JPWO2009022377A1 (en) * | 2007-08-10 | 2010-11-11 | 学校法人 大阪電気通信大学 | Silicon carbide for radiation detection element and radiation detection method |
-
1987
- 1987-07-07 JP JP62169032A patent/JPS6412582A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001242255A (en) * | 2000-02-28 | 2001-09-07 | Shimadzu Corp | Radiation detector and radiation imaging device |
| JP2005523438A (en) * | 2002-04-18 | 2005-08-04 | フォルシェングスツェントルム ユーリッヒ ゲゼルシャフト ミット ベシュレンクター ハフトゥング | Position-sensitive germanium detector with microstructure on both contact surfaces |
| JPWO2009022377A1 (en) * | 2007-08-10 | 2010-11-11 | 学校法人 大阪電気通信大学 | Silicon carbide for radiation detection element and radiation detection method |
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