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JPS57206838A - Detection element for infrared rays - Google Patents

Detection element for infrared rays

Info

Publication number
JPS57206838A
JPS57206838A JP56091379A JP9137981A JPS57206838A JP S57206838 A JPS57206838 A JP S57206838A JP 56091379 A JP56091379 A JP 56091379A JP 9137981 A JP9137981 A JP 9137981A JP S57206838 A JPS57206838 A JP S57206838A
Authority
JP
Japan
Prior art keywords
layer section
quasi
layer
carrier
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56091379A
Other languages
Japanese (ja)
Other versions
JPS6143647B2 (en
Inventor
Hiroshi Takigawa
Kunihiro Tanigawa
Mitsuo Yoshikawa
Michiharu Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56091379A priority Critical patent/JPS57206838A/en
Publication of JPS57206838A publication Critical patent/JPS57206838A/en
Publication of JPS6143647B2 publication Critical patent/JPS6143647B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes

Landscapes

  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Radiation Pyrometers (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To achieve a recombination of a carrier without adding special impurities only to a recombination layer by making a surface layer section on a semiconductor substrate separated by hetero junction a multi-dimentional semiconductor of a narrow forbidden band while a deep layer is made a quasi-metal layer. CONSTITUTION:When a deep layer section 4 of a quasi-metal and a surface layer section 3 with a narrow forbidden band are grown on an epitaxially grown substrate 9 and undergoes a heat treatment or the like, they form a quasi-metal layer and a p type semiconductor layer with a low density of impurities respectively. When injected into the substrate 9, a carrier penetrates into the deep layer section 4 as the surface layer section 3 forms a plate of potential at the right end thereof adjacent to the deep layer section 4. since the deep layer section 4 is made up of a quasi-metal layer, the carrier vanishes while being recombined with a carrier opposite in the polarity.
JP56091379A 1981-06-12 1981-06-12 Detection element for infrared rays Granted JPS57206838A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56091379A JPS57206838A (en) 1981-06-12 1981-06-12 Detection element for infrared rays

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56091379A JPS57206838A (en) 1981-06-12 1981-06-12 Detection element for infrared rays

Publications (2)

Publication Number Publication Date
JPS57206838A true JPS57206838A (en) 1982-12-18
JPS6143647B2 JPS6143647B2 (en) 1986-09-29

Family

ID=14024730

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56091379A Granted JPS57206838A (en) 1981-06-12 1981-06-12 Detection element for infrared rays

Country Status (1)

Country Link
JP (1) JPS57206838A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4948963A (en) * 1983-09-28 1990-08-14 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdon Of Great Britain And Northern Ireland Thermal detector
US5451786A (en) * 1994-04-19 1995-09-19 Santa Barbara Research Center Uncooled mis capacitor for infrared detection

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4948963A (en) * 1983-09-28 1990-08-14 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdon Of Great Britain And Northern Ireland Thermal detector
US5451786A (en) * 1994-04-19 1995-09-19 Santa Barbara Research Center Uncooled mis capacitor for infrared detection

Also Published As

Publication number Publication date
JPS6143647B2 (en) 1986-09-29

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