JPS53121483A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS53121483A JPS53121483A JP3545777A JP3545777A JPS53121483A JP S53121483 A JPS53121483 A JP S53121483A JP 3545777 A JP3545777 A JP 3545777A JP 3545777 A JP3545777 A JP 3545777A JP S53121483 A JPS53121483 A JP S53121483A
- Authority
- JP
- Japan
- Prior art keywords
- implanted
- conduction type
- layer
- semiconductor device
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Element Separation (AREA)
Abstract
PURPOSE: To increase the degree of integration, by reducing the width of depletion layer between implanted layers and the distance between the implanted layers, through the provision of the partial implanted layer of the second conduction type in the first conduction type semiconductor substrate and through higher substrate impurity concentration from the substrate surface to the implanted layer in comparison with other parts.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3545777A JPS53121483A (en) | 1977-03-31 | 1977-03-31 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3545777A JPS53121483A (en) | 1977-03-31 | 1977-03-31 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS53121483A true JPS53121483A (en) | 1978-10-23 |
Family
ID=12442312
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3545777A Pending JPS53121483A (en) | 1977-03-31 | 1977-03-31 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS53121483A (en) |
-
1977
- 1977-03-31 JP JP3545777A patent/JPS53121483A/en active Pending
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