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JPS53120263A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS53120263A
JPS53120263A JP3580477A JP3580477A JPS53120263A JP S53120263 A JPS53120263 A JP S53120263A JP 3580477 A JP3580477 A JP 3580477A JP 3580477 A JP3580477 A JP 3580477A JP S53120263 A JPS53120263 A JP S53120263A
Authority
JP
Japan
Prior art keywords
semiconductor device
manufacture
injection
arsenic ion
sanitation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3580477A
Other languages
Japanese (ja)
Inventor
Hidekazu Okabayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3580477A priority Critical patent/JPS53120263A/en
Publication of JPS53120263A publication Critical patent/JPS53120263A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To ease greatly the problems of the safety and sanitation for arsenic ion injection as well as to realize a manufacturing process of the silicon semiconductor device including the n-type formation method featuring the characteristics of the same as or better than the shallow and high-density n-type layer formed through injection of arsenic ion.
COPYRIGHT: (C)1978,JPO&Japio
JP3580477A 1977-03-29 1977-03-29 Manufacture of semiconductor device Pending JPS53120263A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3580477A JPS53120263A (en) 1977-03-29 1977-03-29 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3580477A JPS53120263A (en) 1977-03-29 1977-03-29 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS53120263A true JPS53120263A (en) 1978-10-20

Family

ID=12452099

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3580477A Pending JPS53120263A (en) 1977-03-29 1977-03-29 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS53120263A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1985000694A1 (en) * 1983-07-25 1985-02-14 American Telephone & Telegraph Company Shallow-junction semiconductor devices
JPS62130522A (en) * 1985-12-02 1987-06-12 Toshiba Corp Manufacturing method of semiconductor device
US4889819A (en) * 1988-05-20 1989-12-26 International Business Machines Corporation Method for fabricating shallow junctions by preamorphizing with dopant of same conductivity as substrate

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1985000694A1 (en) * 1983-07-25 1985-02-14 American Telephone & Telegraph Company Shallow-junction semiconductor devices
JPS62130522A (en) * 1985-12-02 1987-06-12 Toshiba Corp Manufacturing method of semiconductor device
US4889819A (en) * 1988-05-20 1989-12-26 International Business Machines Corporation Method for fabricating shallow junctions by preamorphizing with dopant of same conductivity as substrate

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