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JPS5730375A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5730375A
JPS5730375A JP10416380A JP10416380A JPS5730375A JP S5730375 A JPS5730375 A JP S5730375A JP 10416380 A JP10416380 A JP 10416380A JP 10416380 A JP10416380 A JP 10416380A JP S5730375 A JPS5730375 A JP S5730375A
Authority
JP
Japan
Prior art keywords
layer
fet
photodetector
alyga1
ysb
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10416380A
Other languages
Japanese (ja)
Inventor
Tomonori Ishikawa
Sukehisa Hiyamizu
Toshio Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10416380A priority Critical patent/JPS5730375A/en
Publication of JPS5730375A publication Critical patent/JPS5730375A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To enable the high speed operation of FET, Hall element and photodetector and the like by forming channel layer of GaSb and forming secondary electron gas supplying layer of n type doped AlyGa1-ySb. CONSTITUTION:GaAb single crystalline layer containing no impurity is grown on a GaSb substrate 1 containing p type impurity, and a channel layer 2 is formed. A single crystalline layer made of AlyGa1-ySb, where y=0.15, containing n type impurity Te is grown on the layer 2, and a secondary electron gas supplying layer 3 is formed. Then, source electrode 4, drain electrode 5 and gate electrode 6 are formed. An FET has been described, but the combination of such semiconductor layer can be utilized for the other elements, and when such FET and a photodetector are combined integrally, high sensitivity of the wavelength range of less than 1.82mum of the photodetector can be obtained.
JP10416380A 1980-07-29 1980-07-29 Semiconductor device Pending JPS5730375A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10416380A JPS5730375A (en) 1980-07-29 1980-07-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10416380A JPS5730375A (en) 1980-07-29 1980-07-29 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5730375A true JPS5730375A (en) 1982-02-18

Family

ID=14373380

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10416380A Pending JPS5730375A (en) 1980-07-29 1980-07-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5730375A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9523335B2 (en) 2012-05-30 2016-12-20 Caterpillar Motoren Gmbh & Co. Kg Plunger for an internal combustion engine fuel pump

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9523335B2 (en) 2012-05-30 2016-12-20 Caterpillar Motoren Gmbh & Co. Kg Plunger for an internal combustion engine fuel pump

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