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JPS5730368A - Tunnel fet - Google Patents

Tunnel fet

Info

Publication number
JPS5730368A
JPS5730368A JP10414080A JP10414080A JPS5730368A JP S5730368 A JPS5730368 A JP S5730368A JP 10414080 A JP10414080 A JP 10414080A JP 10414080 A JP10414080 A JP 10414080A JP S5730368 A JPS5730368 A JP S5730368A
Authority
JP
Japan
Prior art keywords
substrate
film
electrode
drain
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10414080A
Other languages
Japanese (ja)
Other versions
JPS631758B2 (en
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10414080A priority Critical patent/JPS5730368A/en
Publication of JPS5730368A publication Critical patent/JPS5730368A/en
Publication of JPS631758B2 publication Critical patent/JPS631758B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/202—FETs having static field-induced regions, e.g. static-induction transistors [SIT] or permeable base transistors [PBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/165—Tunnel injectors

Landscapes

  • Thyristors (AREA)

Abstract

PURPOSE:To provide a tunnel FET which can operate at a high speed with a reverse conductive type impurity region to a semiconductor substrate, formed on a low density layer of the same conductive type as the substrate, formed on the substrate as a gate and with the substrate as a drain by forming a source electrode via a semi-insulating thin film on the substrate. CONSTITUTION:An N type epitaxial layer 15 is grown on an N<+> type semiconductor substrate 14, and an SiO2 film 15 having several tenAngstrom of thickness is formed on the surface of the layer. The semi-insulating film 16 for performing a tunnel may be a film made of nitrided silicon or a polycrystalline silicon. A source electrode 13 is formed on the film 16. A ring-shaped P<+> type impurity region 17 is formed by an ion injection method or the like to surround the electrode 13, and a gate electrode 11 is connected to the region 17. The substrate 14 is connected to the drain electrode 14, and a tunnel current between the source 13 and the drain 14 is controlled by the voltage applied to the gate 11. The conductive types of the respective semiconductor may be reversely to the above stage.
JP10414080A 1980-07-29 1980-07-29 Tunnel fet Granted JPS5730368A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10414080A JPS5730368A (en) 1980-07-29 1980-07-29 Tunnel fet

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10414080A JPS5730368A (en) 1980-07-29 1980-07-29 Tunnel fet

Publications (2)

Publication Number Publication Date
JPS5730368A true JPS5730368A (en) 1982-02-18
JPS631758B2 JPS631758B2 (en) 1988-01-13

Family

ID=14372785

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10414080A Granted JPS5730368A (en) 1980-07-29 1980-07-29 Tunnel fet

Country Status (1)

Country Link
JP (1) JPS5730368A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62179784A (en) * 1986-02-04 1987-08-06 Agency Of Ind Science & Technol Field-effect transistor
US5954914A (en) * 1996-02-23 1999-09-21 Nippon Petrochemicals Company, Limited Web lamination device
US6054086A (en) * 1995-03-24 2000-04-25 Nippon Petrochemicals Co., Ltd. Process of making high-strength yarns
US6127293A (en) * 1994-12-16 2000-10-03 Nippon Petrochemicals Co., Ltd. Laminated bodies and woven and nonwoven fabrics comprising α-olefin polymeric adhesion materials catalyzed with cyclopentadienyl catalyst

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62179784A (en) * 1986-02-04 1987-08-06 Agency Of Ind Science & Technol Field-effect transistor
US6127293A (en) * 1994-12-16 2000-10-03 Nippon Petrochemicals Co., Ltd. Laminated bodies and woven and nonwoven fabrics comprising α-olefin polymeric adhesion materials catalyzed with cyclopentadienyl catalyst
US6054086A (en) * 1995-03-24 2000-04-25 Nippon Petrochemicals Co., Ltd. Process of making high-strength yarns
US5954914A (en) * 1996-02-23 1999-09-21 Nippon Petrochemicals Company, Limited Web lamination device

Also Published As

Publication number Publication date
JPS631758B2 (en) 1988-01-13

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