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JPS56105626A - Compound semiconductor thin film single crystal - Google Patents

Compound semiconductor thin film single crystal

Info

Publication number
JPS56105626A
JPS56105626A JP808880A JP808880A JPS56105626A JP S56105626 A JPS56105626 A JP S56105626A JP 808880 A JP808880 A JP 808880A JP 808880 A JP808880 A JP 808880A JP S56105626 A JPS56105626 A JP S56105626A
Authority
JP
Japan
Prior art keywords
layer
compound semiconductor
profile
thin film
carrier density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP808880A
Other languages
Japanese (ja)
Inventor
Yasuhiro Nishida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP808880A priority Critical patent/JPS56105626A/en
Publication of JPS56105626A publication Critical patent/JPS56105626A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species

Landscapes

  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

PURPOSE:To enable to have the steep profile of the carrier density profile on which an ion injection has been performed by a method wherein deep acceptor impurity density is sufficiently given in advance to the region where the bottom of carrier density profile is sagged. CONSTITUTION:pi-Type epitaxial layer 8 is formed on the compound semiconductor substrate 7 having semi-insulating property and in addition, a high-ratio-resistance epitaxial layer 9 is grown on the above. Among these layers, the layer 8 is formed by doping the acceptor impurities in the density of 1-10X10<-5>cm<-3>. When N type impurities are ion-injected to the said epitaxial layer 9, the N type impurities diffused from the layer 9 to the layer 8 are compensated by the deep acceptor impurities in the layer 8, and the sagged bottom section of the carrier density profile is turned to steep. Accordingly, a useful wafer to the compound semiconductor device, wherein an ion injection is used, can be obtained.
JP808880A 1980-01-26 1980-01-26 Compound semiconductor thin film single crystal Pending JPS56105626A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP808880A JPS56105626A (en) 1980-01-26 1980-01-26 Compound semiconductor thin film single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP808880A JPS56105626A (en) 1980-01-26 1980-01-26 Compound semiconductor thin film single crystal

Publications (1)

Publication Number Publication Date
JPS56105626A true JPS56105626A (en) 1981-08-22

Family

ID=11683562

Family Applications (1)

Application Number Title Priority Date Filing Date
JP808880A Pending JPS56105626A (en) 1980-01-26 1980-01-26 Compound semiconductor thin film single crystal

Country Status (1)

Country Link
JP (1) JPS56105626A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4643136A (en) * 1983-05-19 1987-02-17 Nissan Motor Co., Ltd. Inlet system for internal combustion engine
US4848280A (en) * 1987-01-09 1989-07-18 Mazda Motor Corporation Intake apparatus for internal combustion engine

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50114983A (en) * 1974-02-18 1975-09-09
JPS518869A (en) * 1974-07-09 1976-01-24 Mitsubishi Electric Corp HANDOTAIEPITAKI SHARUEHANO SEIZOHOHO

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50114983A (en) * 1974-02-18 1975-09-09
JPS518869A (en) * 1974-07-09 1976-01-24 Mitsubishi Electric Corp HANDOTAIEPITAKI SHARUEHANO SEIZOHOHO

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4643136A (en) * 1983-05-19 1987-02-17 Nissan Motor Co., Ltd. Inlet system for internal combustion engine
US4848280A (en) * 1987-01-09 1989-07-18 Mazda Motor Corporation Intake apparatus for internal combustion engine

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