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JPS54107269A - Non-volatile semiconductor memory and its production - Google Patents

Non-volatile semiconductor memory and its production

Info

Publication number
JPS54107269A
JPS54107269A JP1423178A JP1423178A JPS54107269A JP S54107269 A JPS54107269 A JP S54107269A JP 1423178 A JP1423178 A JP 1423178A JP 1423178 A JP1423178 A JP 1423178A JP S54107269 A JPS54107269 A JP S54107269A
Authority
JP
Japan
Prior art keywords
diffused
boron
window
production
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1423178A
Other languages
Japanese (ja)
Inventor
Shuichi Oya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1423178A priority Critical patent/JPS54107269A/en
Publication of JPS54107269A publication Critical patent/JPS54107269A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To reduce the write voltage by providing a high-density impurity region, which has the same conductive type as a substance, outside a floating gate electrode and a drain diffusion region. CONSTITUTION:Boron is diffused in Si substrate 1 to form channel stopper region 2; and after growing oxide films 3 and 4, poly-crystal Si film 5, nitride film 6, and Si oxide films 7 and 8, window 12 is provided by patterning, and window 10 is provided by chemical etching. Then, boron is diffused on the exposed substance surface by the ion unjection method, etc., thereby forming writing high-density impurity region 11.
JP1423178A 1978-02-10 1978-02-10 Non-volatile semiconductor memory and its production Pending JPS54107269A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1423178A JPS54107269A (en) 1978-02-10 1978-02-10 Non-volatile semiconductor memory and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1423178A JPS54107269A (en) 1978-02-10 1978-02-10 Non-volatile semiconductor memory and its production

Publications (1)

Publication Number Publication Date
JPS54107269A true JPS54107269A (en) 1979-08-22

Family

ID=11855289

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1423178A Pending JPS54107269A (en) 1978-02-10 1978-02-10 Non-volatile semiconductor memory and its production

Country Status (1)

Country Link
JP (1) JPS54107269A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5519851A (en) * 1978-07-31 1980-02-12 Hitachi Ltd Manufacture of non-volatile memories
JPS5834976A (en) * 1981-08-26 1983-03-01 Nec Corp Nonvolatile semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5519851A (en) * 1978-07-31 1980-02-12 Hitachi Ltd Manufacture of non-volatile memories
JPS5729860B2 (en) * 1978-07-31 1982-06-25
JPS5834976A (en) * 1981-08-26 1983-03-01 Nec Corp Nonvolatile semiconductor device
JPS6322625B2 (en) * 1981-08-26 1988-05-12 Nippon Electric Co

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