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JPS6454723A - Vapor growth device - Google Patents

Vapor growth device

Info

Publication number
JPS6454723A
JPS6454723A JP21164187A JP21164187A JPS6454723A JP S6454723 A JPS6454723 A JP S6454723A JP 21164187 A JP21164187 A JP 21164187A JP 21164187 A JP21164187 A JP 21164187A JP S6454723 A JPS6454723 A JP S6454723A
Authority
JP
Japan
Prior art keywords
inclined plane
susceptor
crystal
gas flow
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21164187A
Other languages
Japanese (ja)
Inventor
Fumihiko Nakamura
Hiroharu Kawai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP21164187A priority Critical patent/JPS6454723A/en
Publication of JPS6454723A publication Critical patent/JPS6454723A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To grow a crystal having a large area and high uniformity by using a susceptor having a specific shape. CONSTITUTION:A susceptor 11 is constituted by forming a first inclined plane 11a, through which the width of a gas flow path 6 is broadened toward the downstream side from the upstream side 11A in a gas introducing section, the upstream side, and a second inclined plane 11b having a specified tilt angle thetaso as to be continued to the first inclined plane 11a and so that the width of the gas flow path 6 is narrowed gradually toward the downstream end 11B. A semiconductor substrate 3 to be crystal-grown is arranged onto a position, where temperature distribution is equalized comparatively, the second inclined plane 11b, at the center of the susceptor 11. The tilt angle alpha of the inclined plane 11A displays an angle where a turbulent flow is not generated in a gas flow. A concentration boundary layer 7 is thickened in a region I by shaping the inclined plane 11a of the susceptor 11, the thermal decomposition rate of a raw material gas is inhibited, the greater part of the raw material gas are carried onto the substrate 3 without being consumed in the region I, and a crystal having a large area and high uniformity is grown.
JP21164187A 1987-08-26 1987-08-26 Vapor growth device Pending JPS6454723A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21164187A JPS6454723A (en) 1987-08-26 1987-08-26 Vapor growth device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21164187A JPS6454723A (en) 1987-08-26 1987-08-26 Vapor growth device

Publications (1)

Publication Number Publication Date
JPS6454723A true JPS6454723A (en) 1989-03-02

Family

ID=16609141

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21164187A Pending JPS6454723A (en) 1987-08-26 1987-08-26 Vapor growth device

Country Status (1)

Country Link
JP (1) JPS6454723A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003104525A1 (en) * 2002-06-10 2003-12-18 東京エレクトロン株式会社 Processing device and processing method
JP2008071917A (en) * 2006-09-14 2008-03-27 Shin Etsu Handotai Co Ltd Susceptor, device, and method for vapor-phase epitaxial growth

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003104525A1 (en) * 2002-06-10 2003-12-18 東京エレクトロン株式会社 Processing device and processing method
JP2008071917A (en) * 2006-09-14 2008-03-27 Shin Etsu Handotai Co Ltd Susceptor, device, and method for vapor-phase epitaxial growth

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