[go: up one dir, main page]

JPS5674922A - Method of vapor growth - Google Patents

Method of vapor growth

Info

Publication number
JPS5674922A
JPS5674922A JP15181579A JP15181579A JPS5674922A JP S5674922 A JPS5674922 A JP S5674922A JP 15181579 A JP15181579 A JP 15181579A JP 15181579 A JP15181579 A JP 15181579A JP S5674922 A JPS5674922 A JP S5674922A
Authority
JP
Japan
Prior art keywords
gas
crystal growth
flow
auxiliary tube
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15181579A
Other languages
Japanese (ja)
Inventor
Masaharu Nogami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15181579A priority Critical patent/JPS5674922A/en
Publication of JPS5674922A publication Critical patent/JPS5674922A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)

Abstract

PURPOSE:To obtain a uniform streamline flow by arranging an auxiliary tube which decreases the sectional area thereof gradually to be less than one-half in a gas flow direction between the crystal growth zone of a reaction tube and an outlet of a gas. CONSTITUTION:An auxiliary tube 36 is inserted between the substrate 33 for crystal growth and a gas outlet 35. The auxiliary tube having a conical shape is made of quartz and is placed at a low temperature side lower by 50-100 deg.C than substrate temperature at the time of crystal growth. As the result, a suddenly cooled gas at a furnace end portion can be separated from a counter flow part to a reaction tube. On the other hand, since the sectional area decreases gradually, the streamline flow is not disordered on the upper side of the auxiliary tube, and the flow of the gas is not changed and not influenced by the substrate of the crystal growth.
JP15181579A 1979-11-22 1979-11-22 Method of vapor growth Pending JPS5674922A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15181579A JPS5674922A (en) 1979-11-22 1979-11-22 Method of vapor growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15181579A JPS5674922A (en) 1979-11-22 1979-11-22 Method of vapor growth

Publications (1)

Publication Number Publication Date
JPS5674922A true JPS5674922A (en) 1981-06-20

Family

ID=15526909

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15181579A Pending JPS5674922A (en) 1979-11-22 1979-11-22 Method of vapor growth

Country Status (1)

Country Link
JP (1) JPS5674922A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5879209A (en) * 1981-11-05 1983-05-13 Nippon Telegr & Teleph Corp <Ntt> Member and method for reinforcing juncture of optical fibers
US4509820A (en) * 1981-05-07 1985-04-09 Nippon Telegraph & Telephone Public Corporation Protective packaging assembly and method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4509820A (en) * 1981-05-07 1985-04-09 Nippon Telegraph & Telephone Public Corporation Protective packaging assembly and method
JPS5879209A (en) * 1981-11-05 1983-05-13 Nippon Telegr & Teleph Corp <Ntt> Member and method for reinforcing juncture of optical fibers

Similar Documents

Publication Publication Date Title
SE8004616L (en) DEVICE FOR INITIAL GAS IN METAL MELTOR
ES450585A1 (en) Process for acid gas removal
JPS5674922A (en) Method of vapor growth
JPS5694751A (en) Vapor growth method
BR9007006A (en) PROCESS TO PREPARE SILICON CARBIDE
JPS5637293A (en) Single crystal manufacturing refractory crucible
JPS5681923A (en) Manufacture of thin film
JPS5694750A (en) Heating treatment device
JPS5681924A (en) Susceptor for vertical type high frequency heating vapor phase growing system
JPS56100122A (en) Diamond synthesizing method
JPS5567597A (en) Single crystal rod producing device
JPS57136932A (en) Photochemical reaction device
JPS6421916A (en) Vapor growth apparatus
JPS52111473A (en) Ribbon crystal growth method
JPS54112214A (en) Production and device for high-tensile and high-modulus graphite fibers
JPS6483599A (en) Apparatus for vapor growth of crystal
JPS6415374A (en) Barrel type vapor growth device
JPS5738935A (en) Chemical gaseous phase reactor
JPS57162326A (en) Vapor phase growing device
Gromova et al. Optimization of Argon--Oxygen Treatment of Stainless Steel
JPS6446936A (en) Growth method of thin film
JPS54161591A (en) Crystal refining and single crystal producing device
JPS575326A (en) Liquid phase epitaxially growing device
Druga Ways of Developing a Low Pressure Carburization Process
JPS6490032A (en) Molecular beam cell