JPS6393855A - Vapor deposition device - Google Patents
Vapor deposition deviceInfo
- Publication number
- JPS6393855A JPS6393855A JP23956986A JP23956986A JPS6393855A JP S6393855 A JPS6393855 A JP S6393855A JP 23956986 A JP23956986 A JP 23956986A JP 23956986 A JP23956986 A JP 23956986A JP S6393855 A JPS6393855 A JP S6393855A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- vapor deposition
- metal
- legs
- hearth liner
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007740 vapor deposition Methods 0.000 title claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 33
- 239000002184 metal Substances 0.000 claims abstract description 33
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 4
- 238000010894 electron beam technology Methods 0.000 abstract description 9
- 238000001816 cooling Methods 0.000 abstract description 6
- 230000001154 acute effect Effects 0.000 abstract description 5
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 abstract description 3
- 229910052737 gold Inorganic materials 0.000 abstract description 3
- 230000007423 decrease Effects 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、半導体基板の金属の薄膜を形成する蒸着装
置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a vapor deposition apparatus for forming a thin metal film on a semiconductor substrate.
第3図は従来の蒸着装置の構成を示す側面図、第4図は
従来のハースライナの側面図である。FIG. 3 is a side view showing the configuration of a conventional vapor deposition apparatus, and FIG. 4 is a side view of a conventional hearth liner.
第3図に示すように、タングステン等の高融点金属のハ
ースライナ1に蒸着金属3をセットし、これを銅の坩堝
4の上に置く、真空中において電源5により加熱された
フィラメント6より電子ビーム1oを発生させ、磁極7
を調整することにより電子ビーム10を蒸着金属3に当
て加熱する。As shown in FIG. 3, a vapor-deposited metal 3 is set on a hearth liner 1 made of a high-melting point metal such as tungsten, and this is placed on a copper crucible 4. An electron beam is emitted from a filament 6 heated by a power source 5 in a vacuum. 1o, magnetic pole 7
By adjusting the electron beam 10, the deposited metal 3 is exposed to the electron beam 10 and heated.
なお、8は前記磁極7用の電源、9は冷却口である。Note that 8 is a power source for the magnetic pole 7, and 9 is a cooling port.
加熱された蒸着金属3の温度が融点を越えると蒸着金属
3が蒸発し、気相状態の蒸発物質が半導体基板上で凝固
することにより薄膜を形成する。When the temperature of the heated vapor-deposited metal 3 exceeds the melting point, the vapor-deposited metal 3 evaporates, and the evaporated substance in the vapor phase solidifies on the semiconductor substrate, thereby forming a thin film.
薄膜形成時は、装置内の温度が電子ビーム1゜による加
熱により上昇するため、冷却口9より水を流し坩堝4を
冷却して装置内の温度上昇を防ぐ。During thin film formation, the temperature inside the apparatus rises due to heating by the 1° electron beam, so water is flowed through the cooling port 9 to cool the crucible 4 and prevent the temperature inside the apparatus from rising.
従来の装置で蒸着を行った場合、金、アルミニウム等の
低融点金属では蒸着金属3全体がハースライナ1内で溶
けるので、溶融した蒸着金属3がハースライナ1の外側
面への回り込み等のため蒸着金属3と坩堝4が接触し、
蒸着金属3が冷却される。このため蒸着金属3をさらに
加熱する必要があり、その熱により蒸着装置内の温度が
上昇し、被蒸着物である半導体基板が損傷される等の問
題点があった。When vapor deposition is performed using a conventional device, the entire vapor-deposited metal 3 melts within the hearth liner 1 in the case of low-melting metals such as gold and aluminum. 3 and crucible 4 come into contact,
The deposited metal 3 is cooled. For this reason, it is necessary to further heat the vapor-deposited metal 3, and the heat increases the temperature inside the vapor deposition apparatus, causing problems such as damage to the semiconductor substrate that is the object to be vapor-deposited.
この発明は、上記のような問題点を解消するためになさ
れたもので、溶融してハースライナに回り込んだ蒸着金
属と坩堝の接触面積を小さくして加熱された蒸着金属の
冷却を防ぐことにより、装置内温度を上昇させないで蒸
着を行うことができる蒸着装置を得ることを目的とする
。This invention was made in order to solve the above-mentioned problems, and by reducing the contact area between the melted vapor deposited metal that has wrapped around the hearth liner and the crucible, and thereby preventing the heated vapor deposited metal from cooling. An object of the present invention is to obtain a vapor deposition apparatus that can perform vapor deposition without increasing the temperature inside the apparatus.
この発明に係る蒸着装置は、加熱する金属を入れるハー
スライナの底部に先端部がそれぞれ鋭角に形成された3
つ以上の脚を一体に、または着脱自在に設けたものであ
る。The vapor deposition apparatus according to the present invention has three tip parts each formed at an acute angle at the bottom of the hearth liner in which the metal to be heated is placed.
It has two or more legs that can be attached or detached.
この発明における蒸着装置は、ハースライナ側面より回
り込んだ蒸着金属が、底部に設けた脚部に沿って坩堝と
接触することになるので、蒸着金属と坩堝の接触面積が
小さくなり、蒸着金属の冷却が防止される。In the vapor deposition apparatus according to the present invention, the vapor deposited metal that wraps around from the side surface of the hearth liner comes into contact with the crucible along the legs provided at the bottom, so the contact area between the vapor deposited metal and the crucible becomes small, and the vapor deposited metal is cooled. is prevented.
第1図はこの発明の一実施例を示す蒸着装置の側面図で
あり、第2図(a)、(b)はこの発明の要部であるハ
ースライナを拡大して示した側面図および平面図である
。FIG. 1 is a side view of a vapor deposition apparatus showing an embodiment of the present invention, and FIGS. 2(a) and 2(b) are a side view and a plan view showing an enlarged hearth liner, which is an essential part of the present invention. It is.
これらの図において、第3図と同一符号は同じものを示
し、ハースライナ1の底部には脚2が坩堝4上への安定
した載置に必要な数、例えば3つ以上が設けられる。ま
た、この脚2の先端部2aは、坩堝4との接触面積を少
なくするため、鋭角に形成されている。さらに、脚2は
ハースライナ1と一体に、または別体に形成されたもの
を着脱自在に取り付は可能としたものである。In these figures, the same reference numerals as in FIG. 3 indicate the same parts, and the bottom of the hearth liner 1 is provided with the number of legs 2 necessary for stable placement on the crucible 4, for example, three or more. Further, the tip portion 2a of this leg 2 is formed at an acute angle in order to reduce the contact area with the crucible 4. Further, the legs 2 can be formed integrally with the hearth liner 1 or separately, and can be detachably attached.
第1図に示すように、ハースライナ1の底部に設けられ
た脚2を蒸着装置の坩堝4の上に置き、従来装置と同様
に加熱されたフィラメント6から発生する電子ビーム1
0により蒸着金属3を加熱し蒸着を行う。As shown in FIG. 1, the legs 2 provided at the bottom of the hearth liner 1 are placed on the crucible 4 of the vapor deposition apparatus, and the electron beam 1 is generated from the heated filament 6 in the same manner as in the conventional apparatus.
0 to heat the vapor-deposited metal 3 and perform vapor deposition.
加熱され溶融した金、アルミニウム等の蒸着金属3はハ
ースライナ1の側面より回り込み、脚2に沿って坩堝4
と接触する。従来装置ではハースライナ1の底面全体が
坩堝4と接触しているため、熱の伝導が大きく、蒸着金
属3が冷却されるが、この発明においては、脚2の先端
部2aと坩堝4の接触面積が小さくなり、ハースライナ
1内の蒸着金属3が坩堝4に伝導しにくくなる。これに
より、電子ビームのエネルギーは、効率よく蒸着金属3
の加熱に使用されることになる。The heated and molten vapor-deposited metal 3 such as gold or aluminum wraps around the side of the hearth liner 1 and flows along the legs 2 into the crucible 4.
come into contact with. In the conventional device, the entire bottom surface of the hearth liner 1 is in contact with the crucible 4, so heat conduction is large and the deposited metal 3 is cooled. However, in this invention, the contact area between the tip 2a of the leg 2 and the crucible becomes smaller, making it difficult for the vapor-deposited metal 3 in the hearth liner 1 to conduct to the crucible 4. This allows the energy of the electron beam to be efficiently transferred to the deposited metal 3.
will be used for heating.
以上説明したように、この発明は、ハースライナの底部
に先端部がそれぞれ鋭角に形成された3つ以上の脚をハ
ースライナと一体に、または着脱自在に設けたので、加
熱された金属と坩堝の接触面積を小さくして蔵置でき、
ハースライナ内の蒸着金属の冷却を防ぐことができる。As explained above, in the present invention, three or more legs each having an acute angle tip are provided at the bottom of the hearth liner, either integrally with the hearth liner or detachably, so that the heated metal and the crucible do not come into contact with each other. Can be stored in a smaller area,
Cooling of the deposited metal within the hearth liner can be prevented.
したがって、従来のように冷却された金属をさらに加熱
することがなくなるため、蒸着装置内の温度を上昇させ
ることなく、半導体基板表面に薄膜を形成できる効果が
ある。Therefore, since there is no need to further heat the cooled metal as in the conventional method, there is an effect that a thin film can be formed on the surface of the semiconductor substrate without increasing the temperature inside the vapor deposition apparatus.
第1図はこの発明の蒸着装置の一実施例を示す側面図、
第2図(a)、(b)はこの発明のハースライナを拡大
して示した側面図および平面図、第3図は従来の蒸着装
置の側面図、第4図は従来のハースライナの側面図であ
る。
図において、1はハースライナ、2は脚、3は蒸着金属
、4は坩堝、5,8は電源、6はフィラメント、7は磁
極、9は冷却口、1oは電子ビームである。
なお、各図中の同一符号は同一または相当部分を示す。
代理人 大 岩 増 雄 (外2名)第1図
第2図
第3図
第4図FIG. 1 is a side view showing an embodiment of the vapor deposition apparatus of the present invention;
Figures 2 (a) and (b) are an enlarged side view and plan view of the hearth liner of the present invention, Figure 3 is a side view of a conventional vapor deposition apparatus, and Figure 4 is a side view of a conventional hearth liner. be. In the figure, 1 is a hearth liner, 2 is a leg, 3 is a deposited metal, 4 is a crucible, 5 and 8 are power supplies, 6 is a filament, 7 is a magnetic pole, 9 is a cooling port, and 1o is an electron beam. Note that the same reference numerals in each figure indicate the same or corresponding parts. Agent Masuo Oiwa (2 others) Figure 1 Figure 2 Figure 3 Figure 4
Claims (1)
て加熱し、半導体基板主面に薄膜を形成する蒸着装置に
おいて、前記ハースライナと坩堝との接触面積を小さく
するための3つ以上の脚を前記ハースライナの底面に設
けたことを特徴とする蒸着装置。In a vapor deposition apparatus that heats vapor-deposited metal in a hearth liner placed in a crucible in a vacuum to form a thin film on the main surface of a semiconductor substrate, three or more legs are provided to reduce the contact area between the hearth liner and the crucible. is provided on the bottom surface of the hearth liner.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23956986A JPS6393855A (en) | 1986-10-07 | 1986-10-07 | Vapor deposition device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23956986A JPS6393855A (en) | 1986-10-07 | 1986-10-07 | Vapor deposition device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6393855A true JPS6393855A (en) | 1988-04-25 |
Family
ID=17046747
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23956986A Pending JPS6393855A (en) | 1986-10-07 | 1986-10-07 | Vapor deposition device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6393855A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1050596A1 (en) * | 1999-05-04 | 2000-11-08 | Satis Vacuum Industries Vertriebs - AG | Electron beam evaporator for vacuum coating apparatus |
JP2014521585A (en) * | 2011-08-05 | 2014-08-28 | プランゼー エスエー | Crucible for crystal growth |
-
1986
- 1986-10-07 JP JP23956986A patent/JPS6393855A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1050596A1 (en) * | 1999-05-04 | 2000-11-08 | Satis Vacuum Industries Vertriebs - AG | Electron beam evaporator for vacuum coating apparatus |
US6384367B1 (en) * | 1999-05-04 | 2002-05-07 | Satis Vacuum Industries Vertriebs-Ag | Electron beam vaporizer for vacuum coating systems |
JP2014521585A (en) * | 2011-08-05 | 2014-08-28 | プランゼー エスエー | Crucible for crystal growth |
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