JPS6092625A - Removing method of resin burr of resin seal type semiconductor device - Google Patents
Removing method of resin burr of resin seal type semiconductor deviceInfo
- Publication number
- JPS6092625A JPS6092625A JP58201307A JP20130783A JPS6092625A JP S6092625 A JPS6092625 A JP S6092625A JP 58201307 A JP58201307 A JP 58201307A JP 20130783 A JP20130783 A JP 20130783A JP S6092625 A JPS6092625 A JP S6092625A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- rotary
- work
- grindstones
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920005989 resin Polymers 0.000 title claims abstract description 65
- 239000011347 resin Substances 0.000 title claims abstract description 65
- 238000000034 method Methods 0.000 title claims description 41
- 239000004065 semiconductor Substances 0.000 title claims description 12
- 239000002245 particle Substances 0.000 claims description 16
- 238000000465 moulding Methods 0.000 abstract description 10
- 230000001680 brushing effect Effects 0.000 abstract description 2
- 238000005452 bending Methods 0.000 abstract 1
- 239000007788 liquid Substances 0.000 description 5
- 238000007789 sealing Methods 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は樹脂封止型半導体装置の製造に於いて、樹脂モ
ールド層を形成する際にリードフレーム面に付着しｌ〔
所謂樹脂パリを除去する方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to the production of resin-sealed semiconductor devices, in which a resin mold layer is deposited on a lead frame surface when a resin mold layer is formed.
The present invention relates to a method for removing so-called resin particles.
（発明の技術的背鍜〕
樹脂封止型半導体装置はリードフレームを用いて製造さ
れ、該リードフレーム上で半導体チップのダイボンディ
ング及びワイヤボンディングが行われる。こうして組立
てが終った後、エポキシ樹脂等のトランスファーモール
ドを行ない、所定の領域を樹脂モールド層で封止する。(Technical Background of the Invention) A resin-sealed semiconductor device is manufactured using a lead frame, and die bonding and wire bonding of semiconductor chips are performed on the lead frame.After assembly is completed, epoxy resin, etc. Transfer molding is performed to seal a predetermined area with a resin mold layer.
第１図は上記樹脂モールド工程を終了した状態のリード
フレームを示す平面図である。同図において、１は樹脂
モールド層、２はリードフレームの外枠、３はリードフ
レームのアウターリード、４．５はリードフレームのタ
イバーである。前記樹脂モールド層１の内部には、リー
ドフレームのベッド部にマウントされた半導体チップ及
びワイヤボンディング部分が封止されている。FIG. 1 is a plan view showing the lead frame after the resin molding process has been completed. In the figure, 1 is a resin mold layer, 2 is an outer frame of a lead frame, 3 is an outer lead of the lead frame, and 4.5 is a tie bar of the lead frame. Inside the resin mold layer 1, a semiconductor chip mounted on a bed portion of a lead frame and a wire bonding portion are sealed.
ところで、樹脂モールド層１を形成する為の１−ランス
ファーモールド工程に於いては、金型成形至を完全に密
閉するのが困雌な為、成形空から漏れ出した樹脂が７ウ
ターリード３の表面に付着し、第２図に示す様な所謂樹
脂パリ６が発生する。この樹脂パリは、次のメッキ工程
に於いてリード３にメッキが付かない原因になるから、
樹脂モールド工程終了後に除去しなければならない。そ
の為の方法としては、液体ホーニング法、ドライホーニ
ング法、電解パリ取り法が従来用いられている。By the way, in the 1-transfer molding process for forming the resin mold layer 1, it is difficult to completely seal the molding area, so the resin leaking from the molding cavity may leak out from the outer lead 3. It adheres to the surface and generates so-called resin particles 6 as shown in FIG. This resin debris will cause the lead 3 to not be plated in the next plating process.
It must be removed after the resin molding process is completed. Conventionally used methods for this purpose include a liquid honing method, a dry honing method, and an electrolytic deburring method.
液体ホーニング法は、アルミナ等の研磨材と水との混合
液をノズルから吹き付けて付着した樹脂パリを除去する
ものである。The liquid honing method involves spraying a liquid mixture of water and an abrasive material such as alumina through a nozzle to remove attached resin particles.
ドライホーニング法も研磨材を吹き付けて樹脂パリを除
去するものであるが・、この場合には水を用いずに研磨
材をそのまま吹き付ける点で異なっている。The dry honing method also involves spraying an abrasive to remove resin particles, but this method differs in that the abrasive is directly sprayed without using water.
電解パリ取り法は、電解液中に浸漬して樹脂パリを軟ら
かくし、水圧により除去するものである。In the electrolytic deburring method, resin debris is softened by immersion in an electrolytic solution and removed using water pressure.
上記従来の樹脂パリ除去方法は何れも大きな設備を必要
とし、また場所をとるという問題がある他、夫々次の様
な問題があった。All of the conventional methods for removing resin debris described above require large equipment and take up a lot of space, as well as the following problems.
即ち、液体ホーニング法やドライホーニング法では樹脂
モールド層１が損傷を受けない様に保護マスクをもちい
る必要があり、また削り量の調整が難しいという問題が
あった。他方、電解パリ除去法ではＮａＯＨ等の電解液
中に浸漬することから、リードフレームの材質が限定さ
れざるを得ないという問題があった。That is, in the liquid honing method and the dry honing method, it is necessary to use a protective mask to prevent the resin mold layer 1 from being damaged, and there are also problems in that it is difficult to adjust the amount of scraping. On the other hand, in the electrolytic deburring method, since the lead frame is immersed in an electrolytic solution such as NaOH, there is a problem in that the material of the lead frame must be limited.
本発明は上記事情に鑑みて為されたもので、樹脂封止型
半導体装置を製造する際、樹脂モールド工程で形成され
た所謂樹脂パリを大掛かりな設肯を必要とすることなく
、簡易に除去することが出来る方法を提供するものであ
る。The present invention has been made in view of the above circumstances, and it is possible to easily remove so-called resin particles formed in the resin molding process without requiring extensive installation when manufacturing resin-sealed semiconductor devices. This provides a method that allows you to do so.
本発明による樹脂封止型半導体装置の樹脂パリ除去方法
は、樹脂封止型半導体装置の樹脂モールド層を形成する
際にリードフレームに付着したモールド樹脂の樹脂パリ
を除去する方法であって、前記樹脂パリを回転砥石で研
削した後、その削り屑を回転ブラシで除去することを特
徴とするものである。A method for removing resin patter from a resin-sealed semiconductor device according to the present invention is a method for removing resin pall from a mold resin that adheres to a lead frame when forming a resin mold layer of a resin-sealed semiconductor device, the method comprising: This method is characterized in that after the resin powder is ground with a rotating whetstone, the shavings are removed with a rotating brush.
本発明によるパリ除去方法は、回転砥石と回転ブラシだ
けで実施でき、何等大掛かりな設備を必要としない。ま
た、樹脂パリ部分のみを研削出来るから、樹脂モールド
層をマスクで保護する必要はなく、電解法の様にリード
フレームの材質に制限を受けることもない。The deburring method according to the present invention can be carried out using only a rotating grindstone and a rotating brush, and does not require any large-scale equipment. In addition, since only the resin pad portion can be ground, there is no need to protect the resin mold layer with a mask, and there is no restriction on the material of the lead frame as in the electrolytic method.
以下第３図〜第７図を参照して本発明の一実施例を説明
する。An embodiment of the present invention will be described below with reference to FIGS. 3 to 7.
第３図は、４連のリードフレームを用いて樹脂モールド
工程までを行なった状態を示す平面図であり、図中１０
はリードフレーム、１１は樹脂モールド層である（以下
、この状態のものをワークという）。FIG. 3 is a plan view showing a state where the resin molding process has been performed using four lead frames.
1 is a lead frame, and 11 is a resin mold layer (hereinafter, this state will be referred to as a workpiece).
第４図は、第３図のワークに対して本発明の樹脂パリ除
去方法を適用する為の装置を示す説明図である。同図に
於いて、２１．２２は並行に配設された搬送レールであ
り、第３図のワークはその両側縁を搬送レール２１．２
２の内側に設けられた溝に挿入支持された状態でレール
２１．２２に治って搬送される。この搬送レール２１．
２２間には、二つのガイドブレート２３．２４が張設さ
れている。前方のガイドブレート２３の上面にはワーク
１０の樹脂モールドｌ１１１に対応して４本の凹条が並
行して形成されており、第３図のワークは樹脂モールド
１１１１をこの凹満内に収納され、リードフレーム１０
をワーク１２の凸部上に配置された状態で搬送される様
になっている。また、後方のガイドプレート２４には、
その下面に前記ワークの樹脂封止層１１に対応した４本
の凹条が並行して形成されており、第３図のワークは樹
脂封止層１１がこの凹条に収納された状態でガイドプレ
ート２４の下面に沿って搬送される様になっている。前
方のガイドブレー１−２３上には、搬送されて来るワー
クの樹脂封止層１１両側に対応する位置に、計８個の回
転砥石２５・・・が配設されている。これら８個の回転
砥石２５・・・は回転軸２６に同軸に取付けられており
、該回転軸２６は可動アーム２７を介して支柱２８に連
結されている。FIG. 4 is an explanatory diagram showing an apparatus for applying the method for removing resin debris of the present invention to the workpiece shown in FIG. 3. In the same figure, reference numerals 21 and 22 are conveyor rails arranged in parallel, and the workpiece in FIG.
2 is inserted and supported in a groove provided inside the rails 21 and 22 and transported. This transport rail 21.
Two guide plates 23 and 24 are stretched between them. Four grooves are formed in parallel on the upper surface of the front guide plate 23 in correspondence with the resin mold 1111 of the workpiece 10, and the workpiece shown in FIG. , lead frame 10
is arranged on the convex portion of the workpiece 12 and transported. In addition, the rear guide plate 24 has
Four grooves corresponding to the resin sealing layer 11 of the workpiece are formed in parallel on its lower surface, and the workpiece shown in FIG. 3 is guided with the resin sealing layer 11 accommodated in the grooves. It is designed to be conveyed along the lower surface of the plate 24. A total of eight rotating grindstones 25 are disposed on the front guide brake 1-23 at positions corresponding to both sides of the resin sealing layer 11 of the work being transported. These eight rotating grindstones 25 are coaxially attached to a rotating shaft 26, and the rotating shaft 26 is connected to a column 28 via a movable arm 27.
可動アーム２７は支柱２８に枢着されており、第５図に
示す様に調整ネジ２９によってその回動位置を調節でき
る様になっている。従って、回転砥石２５の高さは調整
ネジ２９で調節することが出来る。他方、後方のガイド
ブレー１・２４の下方にも同様に、計８個の回転砥石３
０・・・が回転軸３１に軸着して配設され、該回転軸３
１は可動アーム３２を介して支柱２８に固定されている
。この回転砥石３０も、第５図と同じ機構から成る可動
アーム３２の回動調節によって高さを調節できる様にな
っている。後方のガイドプレート２４の更に後方には、
上下一対の回転ブラシ３３．３３”が計８対配置されて
いる。これら８対の回転ブラシは、回転砥石２５・・・
、３０・・・と同様、ワークに於ける樹脂封止層１１の
両側に位置する様に配置されている。The movable arm 27 is pivotally attached to a column 28, and its rotational position can be adjusted using an adjustment screw 29, as shown in FIG. Therefore, the height of the rotating grindstone 25 can be adjusted using the adjustment screw 29. On the other hand, a total of eight rotating grindstones 3 are placed below the rear guide brakes 1 and 24.
0... are arranged to be attached to the rotating shaft 31, and the rotating shaft 3
1 is fixed to the support column 28 via a movable arm 32. The height of this rotary grindstone 30 can also be adjusted by adjusting the rotation of a movable arm 32, which has the same mechanism as that shown in FIG. Further behind the rear guide plate 24,
A total of 8 pairs of upper and lower rotating brushes 33.33" are arranged. These 8 pairs of rotating brushes are connected to the rotating grindstone 25...
, 30 . . . are arranged on both sides of the resin sealing layer 11 in the workpiece.
なお、回転砥石２５．３０は酸化アルミニウム製で、直
径１２０＋ｍ、幅５〜１０１１ＩＩＩのものを用いるの
が望ましい。また、回転ブラシ３３．３３”としてはワ
イヤホイールブラシ（馬毛）の静電防止用を用いるのが
望ましい。The rotating grindstones 25 and 30 are preferably made of aluminum oxide and have a diameter of 120+ m and a width of 5 to 1011 III. Further, as the rotating brush 33.33'', it is desirable to use a wire wheel brush (horse hair) for antistatic purposes.
上記の装置を用いて本発明を実施するには、回転砥石２
５．３０および回転ブラシ３３．３３′を回転させなが
ら、第３図のワークを゛搬送レール２１．２２に沿って
搬送させれば良い。ワークが回転砥石２５の位置に搬送
されて来ると、第６図（Ａ）に示す様にワーク上面に付
着している樹脂パリが回転砥石２５で研削され、除去さ
れる。続いて、ワークが回転砥石３０の位置に搬送され
て来ると、今度は第６図（Ｂ）に示す様に、ワーク下面
に付着していた樹脂パリが削り取られる。そして、ワー
クが回転ブラシ３３．３３−の位置に搬送されて来ると
、ワーク上に残存している樹脂パリの削り屑は、第６図
（Ｃ）に示す様にして回転ブラシ３３．３３′によるブ
ラッシングで除去される。なお、回転砥石２５．３０に
よる削り量は、第５図について説明した機構により砥石
２５゜３０の高さを調節して所望の値に設定することが
出来る。In order to carry out the present invention using the above-mentioned apparatus, a rotary grindstone 2
The workpiece shown in FIG. 3 may be transported along the transport rails 21 and 22 while rotating the rotating brushes 33 and 33'. When the workpiece is conveyed to the position of the rotating grindstone 25, the resin particles adhering to the upper surface of the workpiece are ground and removed by the rotating grindstone 25, as shown in FIG. 6(A). Subsequently, when the workpiece is transported to the position of the rotary grindstone 30, the resin particles adhering to the lower surface of the workpiece are scraped off, as shown in FIG. 6(B). When the workpiece is conveyed to the position of the rotating brush 33.33-, the resin particles remaining on the workpiece are removed by the rotating brush 33.33' as shown in FIG. 6(C). removed by brushing. Incidentally, the amount of cutting by the rotary grindstones 25.30 can be set to a desired value by adjusting the height of the grindstones 25.30 using the mechanism explained with reference to FIG.
こうして樹脂パリを除去された状態のワークには、第７
図に示す様に、各リード間に未だ樹脂パリ１２が除去さ
れずに残っていることになる（勿論、これまでの工程で
脱落することもある）。然し乍ら、このリード間に残存
している樹脂パリ１２もそれま修の工程を経ることによ
・て脆弱になっているから、その後、第８図に示す様に
リードの折曲げ成形を行なう際に簡単に脱落して除去さ
れる。The workpiece with the resin particles removed in this way has a seventh
As shown in the figure, resin particles 12 still remain between each lead without being removed (of course, they may fall off in the previous steps). However, the resin pads 12 remaining between the leads have also become brittle due to the repair process, so when the leads are bent and formed as shown in FIG. easily fall off and be removed.
上述の様に、この実施例によれば従来の液体ホーニング
法、ドライホー且ング法あるりは電解パリ取り法の場合
の様な大掛かりな装置を必要とせず、回転砥石２５．３
０および回転ブラシ３３゜３３′を備えた簡単な装置に
よって、簡易に樹脂パリを除去することが出来る。しか
も、回転砥石２５．３０による研削は局部的に行なうこ
とが出来るため、樹脂モールド層１１をマスク等で保護
する必要もなく、リードフレームの材質に制限を受ける
こともない。As mentioned above, according to this embodiment, there is no need for large-scale equipment as in the case of the conventional liquid honing method, dry honing method, or electrolytic deburring method, and the rotary grinding wheel 25.3 is not required.
Resin particles can be easily removed using a simple device equipped with a rotating brush 33° and a rotating brush 33° and 33′. Furthermore, since grinding using the rotary grindstones 25 and 30 can be performed locally, there is no need to protect the resin mold layer 11 with a mask or the like, and there are no restrictions on the material of the lead frame.
以上詳述した様に、本発明の方法によれば樹脂封止型半
導体装置を製造する際、樹脂モールド工程で形成された
所謂樹脂パリを大掛かりな設備を必要とすることなく、
簡易に除去すすることが出来る等、顕著な効果が得られ
るものである。As detailed above, according to the method of the present invention, when manufacturing a resin-sealed semiconductor device, the so-called resin pads formed in the resin molding process can be removed without the need for large-scale equipment.
It has remarkable effects such as being able to be easily removed.
第１図は樹脂モールド工程を終了した状態のリードフレ
ームを示す平面図、第２図はａｍモールド工程で発生し
た樹脂パリの状態を示す斜視図、第５図は本発明の一実
施例に於いて、樹脂パリ除去の対象としたワークを示す
平面図、第４図は本発明の一実施例に於いて用いた装置
の説明図、第５図は第４図の装置に於ける削り量の調節
機構を示す側面図、第６図（Ａ）〜（Ｃ）は本発明の一
実施例になる樹脂パリ除去方法を示す説明図、第７図は
第６図（Ａ）〜（Ｃ）の方法により樹脂パリを除去され
た状態のワークを示す斜視図、第８図は第６図の状態か
らリードフォーミング工程を経て得られる樹脂封止型半
導体装置を示す側面図である。 ′
１０・・・リードフレーム、１１・・・樹脂モールド層
、し１２・・・樹脂パリ、２１．２２・・・搬送レール
、２３゜２４・・・ガイドブ、レート、２５．３０・・
・回転砥石、２６．３１・・・回転軸、２７．３２・・
・可動アーム、２８・・・支柱、２９・・・調整ネジ、
３３．３３′・・・回転ブラシ。FIG. 1 is a plan view showing the lead frame after the resin molding process, FIG. 2 is a perspective view showing the state of resin flakes generated in the AM molding process, and FIG. FIG. 4 is an explanatory diagram of the device used in one embodiment of the present invention, and FIG. A side view showing the adjustment mechanism, FIGS. 6(A) to (C) are explanatory diagrams showing a method for removing resin debris according to an embodiment of the present invention, and FIG. 7 is a side view of FIGS. 6(A) to (C). FIG. 8 is a perspective view showing a workpiece with resin particles removed by the method, and FIG. 8 is a side view showing a resin-sealed semiconductor device obtained from the state shown in FIG. 6 through a lead forming process. '10...Lead frame, 11...Resin mold layer, 12...Resin mold, 21.22...Transportation rail, 23°24...Guide bar, rate, 25.30...
・Rotating whetstone, 26.31... Rotating shaft, 27.32...
・Movable arm, 28... Support, 29... Adjustment screw,
33.33'...Rotating brush.
Claims (1)
リードフレームに付＠１シたモールド樹脂の樹脂パリを
除去する方法であって、前記樹脂パリを回転砥石で研削
した後、その削り屑を回転ブラシで除去することを特徴
とする樹脂封止型半導体装置の樹脂パリ除去方法。A method for removing resin particles of mold resin attached to a lead frame when forming a resin mold layer of a resin-sealed semiconductor device, the method comprises: grinding the resin particles with a rotary grindstone, and then removing the shavings from the resin particles. A method for removing resin debris from a resin-sealed semiconductor device, the method comprising removing resin particles using a rotating brush.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58201307A JPS6092625A (en) | 1983-10-27 | 1983-10-27 | Removing method of resin burr of resin seal type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58201307A JPS6092625A (en) | 1983-10-27 | 1983-10-27 | Removing method of resin burr of resin seal type semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6092625A true JPS6092625A (en) | 1985-05-24 |
Family
ID=16438830
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58201307A Pending JPS6092625A (en) | 1983-10-27 | 1983-10-27 | Removing method of resin burr of resin seal type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6092625A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6473731A (en) * | 1987-09-16 | 1989-03-20 | Rohm Co Ltd | Manufacture of molding part in electronic component |
| JPH04340730A (en) * | 1991-05-17 | 1992-11-27 | Nec Yamagata Ltd | Gate breaking method in sealing process of semiconductor device |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002265328A (en) * | 2001-03-12 | 2002-09-18 | Kose Corp | Solid cosmetic |
| JP2006241003A (en) * | 2005-03-01 | 2006-09-14 | Kose Corp | Oily solid cosmetic |
| JP2008247759A (en) * | 2007-03-29 | 2008-10-16 | Kose Corp | Oily cosmetic |
| JP2008247760A (en) * | 2007-03-29 | 2008-10-16 | Kose Corp | Oily cosmetic |
| JP2008247762A (en) * | 2007-03-29 | 2008-10-16 | Kose Corp | Oily cosmetic |
| JP2010265230A (en) * | 2009-05-15 | 2010-11-25 | Kose Corp | Oily solid lip cosmetic |
| JP2011184415A (en) * | 2010-03-11 | 2011-09-22 | Kose Corp | Lip cosmetic |
-
1983
- 1983-10-27 JP JP58201307A patent/JPS6092625A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002265328A (en) * | 2001-03-12 | 2002-09-18 | Kose Corp | Solid cosmetic |
| JP2006241003A (en) * | 2005-03-01 | 2006-09-14 | Kose Corp | Oily solid cosmetic |
| JP2008247759A (en) * | 2007-03-29 | 2008-10-16 | Kose Corp | Oily cosmetic |
| JP2008247760A (en) * | 2007-03-29 | 2008-10-16 | Kose Corp | Oily cosmetic |
| JP2008247762A (en) * | 2007-03-29 | 2008-10-16 | Kose Corp | Oily cosmetic |
| JP2010265230A (en) * | 2009-05-15 | 2010-11-25 | Kose Corp | Oily solid lip cosmetic |
| JP2011184415A (en) * | 2010-03-11 | 2011-09-22 | Kose Corp | Lip cosmetic |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6473731A (en) * | 1987-09-16 | 1989-03-20 | Rohm Co Ltd | Manufacture of molding part in electronic component |
| JPH04340730A (en) * | 1991-05-17 | 1992-11-27 | Nec Yamagata Ltd | Gate breaking method in sealing process of semiconductor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112117204B (en) | Manufacturing method of packaging structure | |
| US6671940B2 (en) | Method and apparatus for manufacturing electronic parts | |
| JP4249827B2 (en) | Manufacturing method of semiconductor wafer | |
| DE60103701T2 (en) | Method and device for grinding semiconductor wafers | |
| JP2000173954A5 (en) | ||
| JP2003053662A (en) | Machining distortion removing device | |
| CN118366918B (en) | Semiconductor packaging device and manufacturing method thereof | |
| JP2001232547A (en) | Chemical mechanical polishing system | |
| CN110034020B (en) | Method and apparatus for processing workpiece | |
| JP5622445B2 (en) | Grinding method and grinding apparatus | |
| JPS6092625A (en) | Removing method of resin burr of resin seal type semiconductor device | |
| JP2016136558A (en) | Cutting method for workpiece | |
| JP2013008898A (en) | Processing method of workpiece | |
| JP6448302B2 (en) | Package substrate grinding method | |
| US6629880B1 (en) | Rotary mechanical buffing method for deflashing of molded integrated circuit packages | |
| JP3696900B2 (en) | Surface grinding machine for grinding resin for sealing electronic parts | |
| JP2013258203A (en) | Processing method of wafer | |
| JP2003086550A (en) | Wafer-polishing process and wafer rear face treatment method | |
| JP3751631B2 (en) | Electronic component sealing method | |
| JP2004186584A (en) | Method and apparatus for cutting electronic component | |
| JPS6076959A (en) | Manufacture of semi-conductor device | |
| CN1246402A (en) | chemical mechanical grinding machine | |
| CN218697531U (en) | Chip mounter, wafer polishing pretreatment equipment and wafer polishing equipment | |
| KR0177403B1 (en) | Deflashing device and method of semiconductor package | |
| JPS6050345B2 (en) | Method and device for removing resin burrs from semiconductor devices |