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JPS57208140A - Method of adjusting electron beam exposure apparatus - Google Patents

Method of adjusting electron beam exposure apparatus

Info

Publication number
JPS57208140A
JPS57208140A JP9474781A JP9474781A JPS57208140A JP S57208140 A JPS57208140 A JP S57208140A JP 9474781 A JP9474781 A JP 9474781A JP 9474781 A JP9474781 A JP 9474781A JP S57208140 A JPS57208140 A JP S57208140A
Authority
JP
Japan
Prior art keywords
electron beam
mark
pattern
electrons
detected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9474781A
Other languages
Japanese (ja)
Inventor
Toshihiro Ishizuka
Seigo Igaki
Akio Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9474781A priority Critical patent/JPS57208140A/en
Publication of JPS57208140A publication Critical patent/JPS57208140A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045—Object or beam position registration

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To improve working efficiency and to increase work efficiency by a method wherein an electron beam is scanned in two directions crossing a mark on a sample and then a focus and astigmatism are corrected using a detected electron signal attained on a CRT. CONSTITUTION:A mark 13 placed on the surface of an exposed sample 12 is used to carry out adjustment. The mark 13 is formed of, for example, an Au film in a rectangulr pattern which has side faces in coincidence with the X and Y direction, respectively. An electron beam is alternately deflected and scanned at a conatant speed in the X and Y direction in an area near the Au pattern, and reflected electrons are detected by a reflected electron detector 11. Thus detected signal is displayed on a CRT17 through an amplifier 16. Since the surface of the Au pattern reflects larger number of electrons and the surface of a silicon substrate reflects smaller number of electrons, there occurs a difference between both signal levels. Thus, it becomes possible to easily correct the focus and astigmatism for each exposed sample and also to improve exposure accuracy for patterning.
JP9474781A 1981-06-18 1981-06-18 Method of adjusting electron beam exposure apparatus Pending JPS57208140A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9474781A JPS57208140A (en) 1981-06-18 1981-06-18 Method of adjusting electron beam exposure apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9474781A JPS57208140A (en) 1981-06-18 1981-06-18 Method of adjusting electron beam exposure apparatus

Publications (1)

Publication Number Publication Date
JPS57208140A true JPS57208140A (en) 1982-12-21

Family

ID=14118714

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9474781A Pending JPS57208140A (en) 1981-06-18 1981-06-18 Method of adjusting electron beam exposure apparatus

Country Status (1)

Country Link
JP (1) JPS57208140A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0148784A2 (en) * 1984-01-10 1985-07-17 Fujitsu Limited Calibration of electron beam apparatus
JPH03119717A (en) * 1989-09-30 1991-05-22 Fujitsu Ltd Charged particle exposure device and exposure

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5468149A (en) * 1977-11-11 1979-06-01 Erionikusu Kk Electron ray application device
JPS54100669A (en) * 1978-01-25 1979-08-08 Jeol Ltd Electron-beam unit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5468149A (en) * 1977-11-11 1979-06-01 Erionikusu Kk Electron ray application device
JPS54100669A (en) * 1978-01-25 1979-08-08 Jeol Ltd Electron-beam unit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0148784A2 (en) * 1984-01-10 1985-07-17 Fujitsu Limited Calibration of electron beam apparatus
JPH03119717A (en) * 1989-09-30 1991-05-22 Fujitsu Ltd Charged particle exposure device and exposure

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