JPS56147437A - Electron beam exposure method - Google Patents

Abstract

PURPOSE:To accurately lithograph an oblique pattern by a method wherein microbeams near two reference points of the second diaphragm are used to scan the mark on the surface of a sample in order to obtain the displacement amounts of the projection positions of both the reference points, and the diflection amount is corrected according to said amounts. CONSTITUTION:An alignment mark 35 on a sample 12 is scanned by using the electron beam 36 which is deflected 7 so that the overlap of the image 14 of the first diaphragm 5 and the aperture 15 of the second diaphragm is located near a reference point K. The electrons reflected from end portions 37 are detected 32, and peak signals 34 are sent to a CPU21 to obtain the central coordinates of the mark. Then, the electron beam 36 is deflected 7 again to form a microbeam near the second reference point K' in order to scan the mark 35, and the central coordinates thereof are obtained. Differences DELTAx and DELTAy between both the central coordinates are obtained in the CPU21 and stored 27. When an oblique pattern is lithographed, the pattern is read out 24 to deflect 7 the electron beam, which is moreover deflected 11 by adding 29 the read-out position- designating signals to the deflection correcting amounts DELTAx and DELTAy so that the beam having a section of the oblique pattern is deflected to a given position. Thereby, the position of the oblique pattern is designated by using the reference point K of a rectangular pattern, so that lithography is accurately performed.