JPS56131928A - Method of electron beam exposure - Google Patents
Method of electron beam exposureInfo
- Publication number
- JPS56131928A JPS56131928A JP3504880A JP3504880A JPS56131928A JP S56131928 A JPS56131928 A JP S56131928A JP 3504880 A JP3504880 A JP 3504880A JP 3504880 A JP3504880 A JP 3504880A JP S56131928 A JPS56131928 A JP S56131928A
- Authority
- JP
- Japan
- Prior art keywords
- field
- stage
- electron beam
- calculated
- amount
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
- H01J37/3045—Object or beam position registration
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Beam Exposure (AREA)
Abstract
PURPOSE:To sharply shorten the time needed for exposure by determining the amount and direction of stage movement and the width and direction of electron beam deflection, by twice stage movements. CONSTITUTION:The stage 8 is moved twice so that the mark on the first field of a chip on a wafer W is positioned at the right-lower side and the left-upper side of the deflection field, and the amount of stage movement and the coordinates attained by beam scanning of the mark are measured by an arithmetic circuit (inside CPU5). The conversion coefficient between the stage system and the field system is calculated from the results of measurement by this circuit. And also, the amount of stage movement in X and Y direction is calculated from coordinates of other marks in this field. Also, the width and direction of electron beam deflection are calculated. From results of these calculations, required pattern is drawn in the first field controlled by orders from CPU5. Hereon, drawings are made in the same way.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3504880A JPS5821420B2 (en) | 1980-03-19 | 1980-03-19 | Electron beam exposure method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3504880A JPS5821420B2 (en) | 1980-03-19 | 1980-03-19 | Electron beam exposure method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56131928A true JPS56131928A (en) | 1981-10-15 |
JPS5821420B2 JPS5821420B2 (en) | 1983-04-30 |
Family
ID=12431147
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3504880A Expired JPS5821420B2 (en) | 1980-03-19 | 1980-03-19 | Electron beam exposure method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5821420B2 (en) |
-
1980
- 1980-03-19 JP JP3504880A patent/JPS5821420B2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS5821420B2 (en) | 1983-04-30 |
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