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JPS5766634A - Electron beam exposure device - Google Patents

Electron beam exposure device

Info

Publication number
JPS5766634A
JPS5766634A JP14272980A JP14272980A JPS5766634A JP S5766634 A JPS5766634 A JP S5766634A JP 14272980 A JP14272980 A JP 14272980A JP 14272980 A JP14272980 A JP 14272980A JP S5766634 A JPS5766634 A JP S5766634A
Authority
JP
Japan
Prior art keywords
electron
reflective
electron beams
detector
deviation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14272980A
Other languages
Japanese (ja)
Other versions
JPH0318331B2 (en
Inventor
Mamoru Nakasuji
Sadao Sasaki
Mineo Goto
Ryoichi Yoshikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14272980A priority Critical patent/JPS5766634A/en
Publication of JPS5766634A publication Critical patent/JPS5766634A/en
Publication of JPH0318331B2 publication Critical patent/JPH0318331B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To permit the measurement of beam decline wih high accuracy by obtaining the deviation of parallelism between beam side and laser mirror direction based on the phase differnce of detection signal measured by electron detector detecting the reflective electrons or the secondary electrons of electron beams and predetermined distance between deflection positions of the electron beams. CONSTITUTION:An electron detector 12 detecting reflective electrons obtained by irradiating electron beams from an electron gun 1 is provided at a target 11 composed by adhering fine grains having high reflective electron emissivity on a substrate 11a having low reflective electron emissivity. The deflection position of electron beams can be obtained by scanning in the other direction electron beam shifted by a predetermined distance in one direction and the phase difference alpha of each detection signal in the detector 12 is measured. The deviation theta of the parallelism between aperture masks 2, 4 and laser mirror direction is obtained based on the relationship between the phase difference alpha and distance l. The masks 2, 4 are turned by applying voltage based on the deviation theta to piezo-electric elements 5, 7.
JP14272980A 1980-10-13 1980-10-13 Electron beam exposure device Granted JPS5766634A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14272980A JPS5766634A (en) 1980-10-13 1980-10-13 Electron beam exposure device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14272980A JPS5766634A (en) 1980-10-13 1980-10-13 Electron beam exposure device

Publications (2)

Publication Number Publication Date
JPS5766634A true JPS5766634A (en) 1982-04-22
JPH0318331B2 JPH0318331B2 (en) 1991-03-12

Family

ID=15322220

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14272980A Granted JPS5766634A (en) 1980-10-13 1980-10-13 Electron beam exposure device

Country Status (1)

Country Link
JP (1) JPS5766634A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59161818A (en) * 1983-03-07 1984-09-12 Nippon Telegr & Teleph Corp <Ntt> Detecting method for rotation of rectangular charged beam and rectangular charged beam exposing device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5360178A (en) * 1976-11-10 1978-05-30 Toshiba Corp Target for focusing of electron beam
JPS5583806A (en) * 1978-12-20 1980-06-24 Chiyou Lsi Gijutsu Kenkyu Kumiai Square beam direction detection system

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5360178A (en) * 1976-11-10 1978-05-30 Toshiba Corp Target for focusing of electron beam
JPS5583806A (en) * 1978-12-20 1980-06-24 Chiyou Lsi Gijutsu Kenkyu Kumiai Square beam direction detection system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59161818A (en) * 1983-03-07 1984-09-12 Nippon Telegr & Teleph Corp <Ntt> Detecting method for rotation of rectangular charged beam and rectangular charged beam exposing device

Also Published As

Publication number Publication date
JPH0318331B2 (en) 1991-03-12

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