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JPS57103348A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS57103348A
JPS57103348A JP17932380A JP17932380A JPS57103348A JP S57103348 A JPS57103348 A JP S57103348A JP 17932380 A JP17932380 A JP 17932380A JP 17932380 A JP17932380 A JP 17932380A JP S57103348 A JPS57103348 A JP S57103348A
Authority
JP
Japan
Prior art keywords
fet
substrate
film
channel
oxidized film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17932380A
Other languages
Japanese (ja)
Other versions
JPH049388B2 (en
Inventor
Hiroshi Momose
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP17932380A priority Critical patent/JPS57103348A/en
Publication of JPS57103348A publication Critical patent/JPS57103348A/en
Publication of JPH049388B2 publication Critical patent/JPH049388B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)

Abstract

PURPOSE:To lower the writing voltage of a PROM cell and to improve the reproducibility by breaking a thin insulating film interosed between one of reverse conductive type source and drain regions formed in a substrate and a wire. CONSTITUTION:B ions are implanted, for example, in a channel region to form an FET having n-channel E-mode of 1V of threshold value, and contacting holes 11-13 are respectively opened at source, gate and drain regions 2, 5, 3. After approx. 100Angstrom of a thermally oxidized film is formed in the contacting holes, it is photoetched to remain only with the oxidized film 14 on the source region, aluminum electrodes 15-17 are then formed to form cell FET. The writing is performed in the stae of VD=10V, VS=0V and with the substrate grounded by varying VG to conduct or interrupt the channel. For example, when VG= 10V is set, the VD is set to the oxidized film 14 to break the insulation, so that the cell becomes normal FET. When the VG=0 is set, the VD reversely biases the junction between the drain 3 and the substrate 1, but the film 14 is not broken.
JP17932380A 1980-12-18 1980-12-18 Semiconductor memory device Granted JPS57103348A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17932380A JPS57103348A (en) 1980-12-18 1980-12-18 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17932380A JPS57103348A (en) 1980-12-18 1980-12-18 Semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS57103348A true JPS57103348A (en) 1982-06-26
JPH049388B2 JPH049388B2 (en) 1992-02-20

Family

ID=16063820

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17932380A Granted JPS57103348A (en) 1980-12-18 1980-12-18 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS57103348A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0213638A2 (en) * 1985-09-04 1987-03-11 Fujitsu Limited Programmable semiconductor read only memory device
JP2014041991A (en) * 2012-08-22 2014-03-06 Sk Hynix Inc Semiconductor element and manufacturing method of the same
JP2016149551A (en) * 2015-02-13 2016-08-18 台湾積體電路製造股▲ふん▼有限公司Ｔａｉｗａｎ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｍａｎｕｆａｃｔｕｒｉｎｇ Ｃｏｍｐａｎｙ，Ｌｔｄ． Semiconductor structure having data storage structure and method of manufacturing the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5691464A (en) * 1979-12-25 1981-07-24 Fujitsu Ltd Semiconductor device
JPS5691466A (en) * 1979-12-25 1981-07-24 Fujitsu Ltd Selective writing possible semiconductor element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5691464A (en) * 1979-12-25 1981-07-24 Fujitsu Ltd Semiconductor device
JPS5691466A (en) * 1979-12-25 1981-07-24 Fujitsu Ltd Selective writing possible semiconductor element

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0213638A2 (en) * 1985-09-04 1987-03-11 Fujitsu Limited Programmable semiconductor read only memory device
JP2014041991A (en) * 2012-08-22 2014-03-06 Sk Hynix Inc Semiconductor element and manufacturing method of the same
JP2016149551A (en) * 2015-02-13 2016-08-18 台湾積體電路製造股▲ふん▼有限公司Ｔａｉｗａｎ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｍａｎｕｆａｃｔｕｒｉｎｇ Ｃｏｍｐａｎｙ，Ｌｔｄ． Semiconductor structure having data storage structure and method of manufacturing the same
JP2018088544A (en) * 2015-02-13 2018-06-07 台湾積體電路製造股▲ふん▼有限公司Ｔａｉｗａｎ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｍａｎｕｆａｃｔｕｒｉｎｇ Ｃｏｍｐａｎｙ，Ｌｔｄ． Semiconductor structure having data storage structure and manufacturing method thereof
US10090360B2 (en) 2015-02-13 2018-10-02 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor structure including a plurality of trenches
US10763305B2 (en) 2015-02-13 2020-09-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure with data storage structure
US11653503B2 (en) 2015-02-13 2023-05-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure with data storage structure and method for manufacturing the same

Also Published As

Publication number Publication date
JPH049388B2 (en) 1992-02-20

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