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JPS5524433A - Composite type semiconductor device - Google Patents

Composite type semiconductor device

Info

Publication number
JPS5524433A
JPS5524433A JP9684178A JP9684178A JPS5524433A JP S5524433 A JPS5524433 A JP S5524433A JP 9684178 A JP9684178 A JP 9684178A JP 9684178 A JP9684178 A JP 9684178A JP S5524433 A JPS5524433 A JP S5524433A
Authority
JP
Japan
Prior art keywords
layer
type
ion
channel
fet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9684178A
Other languages
Japanese (ja)
Inventor
Hideyuki Ozaki
Kazuhiro Shimotori
Yasuharu Nagayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9684178A priority Critical patent/JPS5524433A/en
Publication of JPS5524433A publication Critical patent/JPS5524433A/en
Pending legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To facilitate coexistence with enhancement (E) type FET or formation of EE type composite IC by controlling threshold voltage through injecting ion in the channel of depletion (D) type FET.
CONSTITUTION: P layer 114 is formed through placing P- epitaxial layer on P layer 110 having N+ embedded layer 111 with its one end 113 kept right above the layer 111 and the other end 115 left from prividing N+ layer 116 shallowly. Next, V channel is formed to reach the embedded layer and covered with a field insulating film 123. There may be formed P or N type ion-impregnated layer 124, where preferable, on P layer 112 at slope 121 side. There are further provided a source electrode 127, drain electrode 130 through the insulating film 123, gate electrodes 128, 129 on the slope and an electrode 132 on the channel bottom. According to this constitution, an inverter of ED or EE type can be formed in one opening by setting Vth of one side FET at an arbitrary value through controlling conduction type and specific resistance of the ion-impregnated layer 124 under the circumstances prevailing then.
COPYRIGHT: (C)1980,JPO&Japio
JP9684178A 1978-08-09 1978-08-09 Composite type semiconductor device Pending JPS5524433A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9684178A JPS5524433A (en) 1978-08-09 1978-08-09 Composite type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9684178A JPS5524433A (en) 1978-08-09 1978-08-09 Composite type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5524433A true JPS5524433A (en) 1980-02-21

Family

ID=14175734

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9684178A Pending JPS5524433A (en) 1978-08-09 1978-08-09 Composite type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5524433A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58184767A (en) * 1982-04-23 1983-10-28 Clarion Co Ltd V-shaped MOSFET with load
US4466008A (en) * 1980-10-30 1984-08-14 Heinz Beneking Field effect transistor
US4786953A (en) * 1984-07-16 1988-11-22 Nippon Telegraph & Telephone Vertical MOSFET and method of manufacturing the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4466008A (en) * 1980-10-30 1984-08-14 Heinz Beneking Field effect transistor
JPS58184767A (en) * 1982-04-23 1983-10-28 Clarion Co Ltd V-shaped MOSFET with load
US4786953A (en) * 1984-07-16 1988-11-22 Nippon Telegraph & Telephone Vertical MOSFET and method of manufacturing the same

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