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JPS53141585A - Manufacture of insulating gate field effect type semiconductor device - Google Patents

Manufacture of insulating gate field effect type semiconductor device

Info

Publication number
JPS53141585A
JPS53141585A JP5671377A JP5671377A JPS53141585A JP S53141585 A JPS53141585 A JP S53141585A JP 5671377 A JP5671377 A JP 5671377A JP 5671377 A JP5671377 A JP 5671377A JP S53141585 A JPS53141585 A JP S53141585A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
type semiconductor
field effect
effect type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5671377A
Other languages
Japanese (ja)
Other versions
JPS6139749B2 (en
Inventor
Kenji Tokuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5671377A priority Critical patent/JPS53141585A/en
Publication of JPS53141585A publication Critical patent/JPS53141585A/en
Publication of JPS6139749B2 publication Critical patent/JPS6139749B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To decrease the back-bias dependency of the threshold voltage by injuecting the anti-conduction type impurity ion continuously through the surface of the semiconductor substrate while varying the amount of energy and then providing a region which is the same conduction type as the substrate and features a low impurity concentration at the area righ tunder the channel and deep enough from the substrate surface.
COPYRIGHT: (C)1978,JPO&Japio
JP5671377A 1977-05-16 1977-05-16 Manufacture of insulating gate field effect type semiconductor device Granted JPS53141585A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5671377A JPS53141585A (en) 1977-05-16 1977-05-16 Manufacture of insulating gate field effect type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5671377A JPS53141585A (en) 1977-05-16 1977-05-16 Manufacture of insulating gate field effect type semiconductor device

Publications (2)

Publication Number Publication Date
JPS53141585A true JPS53141585A (en) 1978-12-09
JPS6139749B2 JPS6139749B2 (en) 1986-09-05

Family

ID=13035112

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5671377A Granted JPS53141585A (en) 1977-05-16 1977-05-16 Manufacture of insulating gate field effect type semiconductor device

Country Status (1)

Country Link
JP (1) JPS53141585A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5438776A (en) * 1977-08-31 1979-03-23 Ibm Fet
JPS5591875A (en) * 1978-12-29 1980-07-11 Ibm Mosfet
US5175599A (en) * 1985-04-19 1992-12-29 Kabushiki Kaisha Toshiba MOS semiconductor device
US5384476A (en) * 1979-08-25 1995-01-24 Zaidan Hojin Handotai Kenkyu Shinkokai Short channel MOSFET with buried anti-punch through region
US5472897A (en) * 1995-01-10 1995-12-05 United Microelectronics Corp. Method for fabricating MOS device with reduced anti-punchthrough region

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5438776A (en) * 1977-08-31 1979-03-23 Ibm Fet
JPS5591875A (en) * 1978-12-29 1980-07-11 Ibm Mosfet
US5384476A (en) * 1979-08-25 1995-01-24 Zaidan Hojin Handotai Kenkyu Shinkokai Short channel MOSFET with buried anti-punch through region
US5552623A (en) * 1979-08-25 1996-09-03 Handotai Kenkyu Shinkokai Short channel mosfet with buried anti-punch through region
US5175599A (en) * 1985-04-19 1992-12-29 Kabushiki Kaisha Toshiba MOS semiconductor device
US5472897A (en) * 1995-01-10 1995-12-05 United Microelectronics Corp. Method for fabricating MOS device with reduced anti-punchthrough region

Also Published As

Publication number Publication date
JPS6139749B2 (en) 1986-09-05

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