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JPS5380172A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5380172A
JPS5380172A JP15677376A JP15677376A JPS5380172A JP S5380172 A JPS5380172 A JP S5380172A JP 15677376 A JP15677376 A JP 15677376A JP 15677376 A JP15677376 A JP 15677376A JP S5380172 A JPS5380172 A JP S5380172A
Authority
JP
Japan
Prior art keywords
semiconductor device
misfet
punch
junction
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15677376A
Other languages
Japanese (ja)
Inventor
Masao Taguchi
Osamu Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15677376A priority Critical patent/JPS5380172A/en
Publication of JPS5380172A publication Critical patent/JPS5380172A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To avoid occurrence of the punch-through phenomenon of MISFET as well as to increase the switching velocity, by providing a high impurity concentration region right under the gate and near the area with more depth than that of the junction of the source and drain.
COPYRIGHT: (C)1978,JPO&Japio
JP15677376A 1976-12-25 1976-12-25 Semiconductor device Pending JPS5380172A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15677376A JPS5380172A (en) 1976-12-25 1976-12-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15677376A JPS5380172A (en) 1976-12-25 1976-12-25 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5380172A true JPS5380172A (en) 1978-07-15

Family

ID=15634990

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15677376A Pending JPS5380172A (en) 1976-12-25 1976-12-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5380172A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4799098A (en) * 1983-03-28 1989-01-17 Hitachi, Ltd. MOS/bipolar device with stepped buried layer under active regions
US4966859A (en) * 1982-03-09 1990-10-30 Siemens Aktiengesellschaft Voltage-stable sub-μm MOS transistor for VLSI circuits
US5128739A (en) * 1983-12-07 1992-07-07 Fujitsu Limited MIS type semiconductor device formed in a semiconductor substrate having a well region
US5384476A (en) * 1979-08-25 1995-01-24 Zaidan Hojin Handotai Kenkyu Shinkokai Short channel MOSFET with buried anti-punch through region

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5384476A (en) * 1979-08-25 1995-01-24 Zaidan Hojin Handotai Kenkyu Shinkokai Short channel MOSFET with buried anti-punch through region
US5552623A (en) * 1979-08-25 1996-09-03 Handotai Kenkyu Shinkokai Short channel mosfet with buried anti-punch through region
US4966859A (en) * 1982-03-09 1990-10-30 Siemens Aktiengesellschaft Voltage-stable sub-μm MOS transistor for VLSI circuits
US4799098A (en) * 1983-03-28 1989-01-17 Hitachi, Ltd. MOS/bipolar device with stepped buried layer under active regions
US5128739A (en) * 1983-12-07 1992-07-07 Fujitsu Limited MIS type semiconductor device formed in a semiconductor substrate having a well region

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