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JPS5368987A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5368987A
JPS5368987A JP14503976A JP14503976A JPS5368987A JP S5368987 A JPS5368987 A JP S5368987A JP 14503976 A JP14503976 A JP 14503976A JP 14503976 A JP14503976 A JP 14503976A JP S5368987 A JPS5368987 A JP S5368987A
Authority
JP
Japan
Prior art keywords
prevent
impurity concentration
semiconductor device
forming portions
portions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14503976A
Other languages
Japanese (ja)
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14503976A priority Critical patent/JPS5368987A/en
Publication of JPS5368987A publication Critical patent/JPS5368987A/en
Pending legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To prevent the decrease in punch-through dielectric strength and prevent the increase in junction capacity by changing substrate impurity concentration at various portions such as increasing the impurity concentration of channel forming portions and decreasing that of drain region forming portions.
COPYRIGHT: (C)1978,JPO&Japio
JP14503976A 1976-12-02 1976-12-02 Semiconductor device Pending JPS5368987A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14503976A JPS5368987A (en) 1976-12-02 1976-12-02 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14503976A JPS5368987A (en) 1976-12-02 1976-12-02 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5368987A true JPS5368987A (en) 1978-06-19

Family

ID=15375971

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14503976A Pending JPS5368987A (en) 1976-12-02 1976-12-02 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5368987A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6050954A (en) * 1983-08-31 1985-03-22 Toshiba Corp Radiation resistant semiconductor element
JPS6050953A (en) * 1983-08-31 1985-03-22 Toshiba Corp Radiation resistant semiconductor device
JPS61168254A (en) * 1985-01-19 1986-07-29 Sharp Corp High voltage MOS field effect semiconductor device
US5412243A (en) * 1987-11-18 1995-05-02 Canon Kabushiki Kaisha Photoelectric conversion apparatus
JP2001196546A (en) * 1999-09-17 2001-07-19 Sony Corp Semiconductor device and method of manufacturing semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6050954A (en) * 1983-08-31 1985-03-22 Toshiba Corp Radiation resistant semiconductor element
JPS6050953A (en) * 1983-08-31 1985-03-22 Toshiba Corp Radiation resistant semiconductor device
JPS61168254A (en) * 1985-01-19 1986-07-29 Sharp Corp High voltage MOS field effect semiconductor device
US5412243A (en) * 1987-11-18 1995-05-02 Canon Kabushiki Kaisha Photoelectric conversion apparatus
JP2001196546A (en) * 1999-09-17 2001-07-19 Sony Corp Semiconductor device and method of manufacturing semiconductor device

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