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JPS5754372A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5754372A
JPS5754372A JP55129503A JP12950380A JPS5754372A JP S5754372 A JPS5754372 A JP S5754372A JP 55129503 A JP55129503 A JP 55129503A JP 12950380 A JP12950380 A JP 12950380A JP S5754372 A JPS5754372 A JP S5754372A
Authority
JP
Japan
Prior art keywords
type
channel
electrode
gate electrode
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55129503A
Other languages
Japanese (ja)
Inventor
Tokujiro Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP55129503A priority Critical patent/JPS5754372A/en
Publication of JPS5754372A publication Critical patent/JPS5754372A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/84—Combinations of enhancement-mode IGFETs and depletion-mode IGFETs

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To form the P-channel E/DMOS of stabilized threshold value voltage for the subject semiconductor device by a method wherein the conductive type of the depletion (D) type FET and the Si gate of the enhancement (E) type FET, provided on a single semiconductor substrate, are varied respectively. CONSTITUTION:After a field oxide film 2 and a gate oxide film have been formed on an Si substrate 1, a polycrystalline layer is formed on the whole surface, a selective oxidation is performed utilizing the nitriding film selectively provided on the surface and after a gate electrode has been formed, P is diffused by exposing the surface of one of the electrodes, and then a source and drain region and a P type gate electrode are formed by exposing the surface of other electrode and a source and drain region and by performing diffusion of B. Through these procedures, the P-channel E/MOS of an N type gate electrode and P-channel D/MOS of the P type electrode are formed, thereby enabling to stabilize the threshold value voltage.
JP55129503A 1980-09-18 1980-09-18 Semiconductor device Pending JPS5754372A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55129503A JPS5754372A (en) 1980-09-18 1980-09-18 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55129503A JPS5754372A (en) 1980-09-18 1980-09-18 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5754372A true JPS5754372A (en) 1982-03-31

Family

ID=15011087

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55129503A Pending JPS5754372A (en) 1980-09-18 1980-09-18 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5754372A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6066880A (en) * 1997-08-26 2000-05-23 Mitsubishi Denki Kabushiki Kaisha Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6066880A (en) * 1997-08-26 2000-05-23 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
US6492676B2 (en) 1997-08-26 2002-12-10 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having gate electrode in which depletion layer can be generated

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