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JPS5710248A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5710248A
JPS5710248A JP6662480A JP6662480A JPS5710248A JP S5710248 A JPS5710248 A JP S5710248A JP 6662480 A JP6662480 A JP 6662480A JP 6662480 A JP6662480 A JP 6662480A JP S5710248 A JPS5710248 A JP S5710248A
Authority
JP
Japan
Prior art keywords
poly
layer
oxide film
electrode
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6662480A
Other languages
Japanese (ja)
Inventor
Makio Beppu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6662480A priority Critical patent/JPS5710248A/en
Publication of JPS5710248A publication Critical patent/JPS5710248A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To manufacture a structure having few differences in steps in a short time in a process, wherein a poly Si layer is selectively oxidized and electrode and wiring layers are formed, by performing oxidation to a specified depth, removing the oxide layer, and continuing and finishing selective oxidization. CONSTITUTION:For example, in the process of forming the poly Si electrode and wiring in an Si gate MOSIC, a poly Si layer 4 is deposited on a substrate 1 on which a gate film 3 is formed, the surface is thinly oxidized, and nitride film patterns 11 and 12 are provided. Then, e.g., one half the thickness of the exposed poly Si is oxidized. Thereafter said oxide film 15 is etched out, and an unoxidized poly Si layer 16 is exposed. Then the oxidation is repeated, and the poly Si layer 16 is transformed into an oxide film 17. The gate electrode 6 and the wiring 7 comprising poly Si are embeded in the oxide film 17. In this method, the oxidizing time can be reduced to one half, and the dispersion in the oxidizing time can be reduced. Furthermore, the flat structure having few differences in steps can be obtained.
JP6662480A 1980-05-20 1980-05-20 Manufacture of semiconductor device Pending JPS5710248A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6662480A JPS5710248A (en) 1980-05-20 1980-05-20 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6662480A JPS5710248A (en) 1980-05-20 1980-05-20 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5710248A true JPS5710248A (en) 1982-01-19

Family

ID=13321221

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6662480A Pending JPS5710248A (en) 1980-05-20 1980-05-20 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5710248A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5969949A (en) * 1982-10-14 1984-04-20 Fuji Electric Corp Res & Dev Ltd Manufacture of semiconductor device
US4889829A (en) * 1988-01-18 1989-12-26 Fujitsu Limited Method for producing a semiconductor device having a silicon-on-insulator structure

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5028275A (en) * 1973-07-12 1975-03-22
JPS5412566A (en) * 1977-06-29 1979-01-30 Toshiba Corp Production of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5028275A (en) * 1973-07-12 1975-03-22
JPS5412566A (en) * 1977-06-29 1979-01-30 Toshiba Corp Production of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5969949A (en) * 1982-10-14 1984-04-20 Fuji Electric Corp Res & Dev Ltd Manufacture of semiconductor device
US4889829A (en) * 1988-01-18 1989-12-26 Fujitsu Limited Method for producing a semiconductor device having a silicon-on-insulator structure

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