JPS5678155A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS5678155A JPS5678155A JP15518879A JP15518879A JPS5678155A JP S5678155 A JPS5678155 A JP S5678155A JP 15518879 A JP15518879 A JP 15518879A JP 15518879 A JP15518879 A JP 15518879A JP S5678155 A JPS5678155 A JP S5678155A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- opening
- multicrystal
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 238000000034 method Methods 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 238000005224 laser annealing Methods 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 239000013078 crystal Substances 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 238000009413 insulation Methods 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Landscapes
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15518879A JPS5678155A (en) | 1979-11-30 | 1979-11-30 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15518879A JPS5678155A (en) | 1979-11-30 | 1979-11-30 | Semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5678155A true JPS5678155A (en) | 1981-06-26 |
Family
ID=15600403
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15518879A Pending JPS5678155A (en) | 1979-11-30 | 1979-11-30 | Semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5678155A (ja) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS587869A (ja) * | 1981-07-07 | 1983-01-17 | Nec Corp | 半導体装置 |
| JPS5833869A (ja) * | 1981-08-25 | 1983-02-28 | Toshiba Corp | 半導体装置 |
| JPS5837953A (ja) * | 1981-08-31 | 1983-03-05 | Toshiba Corp | 積層半導体集積回路装置 |
| JPS5853821A (ja) * | 1981-09-25 | 1983-03-30 | Toshiba Corp | 積層半導体装置の製造方法 |
| JPS5856362A (ja) * | 1981-09-29 | 1983-04-04 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS5893225A (ja) * | 1981-11-30 | 1983-06-02 | Toshiba Corp | 半導体薄膜構造の製造方法 |
| JPS59182570A (ja) * | 1983-03-31 | 1984-10-17 | Fujitsu Ltd | 半導体装置 |
| JPS60189217A (ja) * | 1984-03-09 | 1985-09-26 | Agency Of Ind Science & Technol | 多層ｓｏｉ用シ−ド構造 |
-
1979
- 1979-11-30 JP JP15518879A patent/JPS5678155A/ja active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS587869A (ja) * | 1981-07-07 | 1983-01-17 | Nec Corp | 半導体装置 |
| JPS5833869A (ja) * | 1981-08-25 | 1983-02-28 | Toshiba Corp | 半導体装置 |
| JPS5837953A (ja) * | 1981-08-31 | 1983-03-05 | Toshiba Corp | 積層半導体集積回路装置 |
| JPH0330301B2 (ja) * | 1981-08-31 | 1991-04-26 | ||
| JPS5853821A (ja) * | 1981-09-25 | 1983-03-30 | Toshiba Corp | 積層半導体装置の製造方法 |
| JPS5856362A (ja) * | 1981-09-29 | 1983-04-04 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS6342418B2 (ja) * | 1981-09-29 | 1988-08-23 | Fujitsu Ltd | |
| JPS5893225A (ja) * | 1981-11-30 | 1983-06-02 | Toshiba Corp | 半導体薄膜構造の製造方法 |
| JPS59182570A (ja) * | 1983-03-31 | 1984-10-17 | Fujitsu Ltd | 半導体装置 |
| JPS60189217A (ja) * | 1984-03-09 | 1985-09-26 | Agency Of Ind Science & Technol | 多層ｓｏｉ用シ−ド構造 |
| JPH0351086B2 (ja) * | 1984-03-09 | 1991-08-05 | Kogyo Gijutsuin |
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