JPS6435908A - Formation of polysilicon film - Google Patents
Formation of polysilicon filmInfo
- Publication number
- JPS6435908A JPS6435908A JP19102487A JP19102487A JPS6435908A JP S6435908 A JPS6435908 A JP S6435908A JP 19102487 A JP19102487 A JP 19102487A JP 19102487 A JP19102487 A JP 19102487A JP S6435908 A JPS6435908 A JP S6435908A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- amorphous silicon
- band gap
- polysilicon film
- optical band
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
Abstract
PURPOSE:To make it possible to obtain the polysilicon film having a large crystal grain size by a method wherein the amorphous silicon film, which is the precursor of the polysilicon film, is formed into the three-layer structure having a specific optical band gap value. CONSTITUTION:After an amorphous silicon film 2 has been formed on a substrate 1, the amorphous silicon film is covered on a polysilicon film 3 by conducting thermal annealing. Then, the amorphous silicon film 2 is divided into the first layer 2-1 having the optical band gap value of 1.72 eV or less or 1.77 eV or more, the second layer 2-2 having the optical band gap value of 1.73-1.76 eV, and the third layer 2-3 having the optical band gap value same as the first layer 2-1. As a result, crystal grain size can be made larger, and the degree of shifting of field effect can also be improved.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19102487A JPS6435908A (en) | 1987-07-30 | 1987-07-30 | Formation of polysilicon film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19102487A JPS6435908A (en) | 1987-07-30 | 1987-07-30 | Formation of polysilicon film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6435908A true JPS6435908A (en) | 1989-02-07 |
Family
ID=16267625
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19102487A Pending JPS6435908A (en) | 1987-07-30 | 1987-07-30 | Formation of polysilicon film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6435908A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102629558A (en) * | 2012-01-09 | 2012-08-08 | 深超光电（深圳）有限公司 | Manufacturing method of low-temperature polycrystalline silicon (poly-Si) thin film transistor (TFT) |
-
1987
- 1987-07-30 JP JP19102487A patent/JPS6435908A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102629558A (en) * | 2012-01-09 | 2012-08-08 | 深超光电（深圳）有限公司 | Manufacturing method of low-temperature polycrystalline silicon (poly-Si) thin film transistor (TFT) |
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