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JPS5658225A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5658225A
JPS5658225A JP13406579A JP13406579A JPS5658225A JP S5658225 A JPS5658225 A JP S5658225A JP 13406579 A JP13406579 A JP 13406579A JP 13406579 A JP13406579 A JP 13406579A JP S5658225 A JPS5658225 A JP S5658225A
Authority
JP
Japan
Prior art keywords
substrate
leak
constitution
monocrystalline
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13406579A
Other languages
Japanese (ja)
Inventor
Masahiko Denda
Shinichi Sato
Natsuo Tsubouchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13406579A priority Critical patent/JPS5658225A/en
Publication of JPS5658225A publication Critical patent/JPS5658225A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To avoid a leak at the junction part of a semiconductor device by a method wherein insulating films are provided locally on an Si substrate and is covered with a polycrystalline or an amorphous Si layer, and is heat-treated to make to be a monocrystalline layer to be used for the constitution of the semiconductor device. CONSTITUTION:SiO2 films 2 are formed locally on a P type Si substrate 1, and polycrystalline Si or amorphous Si 3 is laminated on it. An impurity is introduced in the film 3 and is heat-treated at a high temperature to convert locally the film 3 into a monocrystalline layer 4. Thereafter a gate oxidized film 7, a gate electrode 8, a source 5 and a drain 6 are formed according to the customary method. The elements are separated from each other by oxidized layers 2' formed at the circumference of the monocrystalline layers 4. In this constitution, because the junction parts of the source, the drain and the substrate is positioned in the monocrystalline layers having good quality, so that the leak at the junction part can be prevented and the leak at the channel part can be also prevented. By this way, an MIS device having small parasitic capacity and superior crystallinity can be obtained using a a low cost Si substrate.
JP13406579A 1979-10-16 1979-10-16 Manufacture of semiconductor device Pending JPS5658225A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13406579A JPS5658225A (en) 1979-10-16 1979-10-16 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13406579A JPS5658225A (en) 1979-10-16 1979-10-16 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5658225A true JPS5658225A (en) 1981-05-21

Family

ID=15119542

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13406579A Pending JPS5658225A (en) 1979-10-16 1979-10-16 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5658225A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6376484A (en) * 1986-09-19 1988-04-06 Komatsu Ltd Manufacture of semiconductor pressure sensor
KR100381015B1 (en) * 2000-12-22 2003-04-26 주식회사 하이닉스반도체 Method for fabricating semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6376484A (en) * 1986-09-19 1988-04-06 Komatsu Ltd Manufacture of semiconductor pressure sensor
KR100381015B1 (en) * 2000-12-22 2003-04-26 주식회사 하이닉스반도체 Method for fabricating semiconductor device

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