[go: up one dir, main page]

JPS5619680A - Manufacture of solar cell - Google Patents

Manufacture of solar cell

Info

Publication number
JPS5619680A
JPS5619680A JP9519379A JP9519379A JPS5619680A JP S5619680 A JPS5619680 A JP S5619680A JP 9519379 A JP9519379 A JP 9519379A JP 9519379 A JP9519379 A JP 9519379A JP S5619680 A JPS5619680 A JP S5619680A
Authority
JP
Japan
Prior art keywords
junction
capillary
speed
layer
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9519379A
Other languages
Japanese (ja)
Other versions
JPS5759676B2 (en
Inventor
Kenjiro Kimura
Katsuya Honma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JAPAN SOLAR ENERG KK
Japan Solar Energy Co Ltd
Original Assignee
JAPAN SOLAR ENERG KK
Japan Solar Energy Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JAPAN SOLAR ENERG KK, Japan Solar Energy Co Ltd filed Critical JAPAN SOLAR ENERG KK
Priority to JP9519379A priority Critical patent/JPS5619680A/en
Publication of JPS5619680A publication Critical patent/JPS5619680A/en
Publication of JPS5759676B2 publication Critical patent/JPS5759676B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To make the high speed pull-up possible at a speed twice the ordinary speed by immersing the lower end of a capillary into a semiconductor solution conducting it to the upper end by the capillary action forming a P-N junction in a ribbon crystal which is grown continuously and performing low temperature treatment before electrodes are attached. CONSTITUTION:The lower end of a capillary is immersed in semiconductor solution, and a ribbon crystal which is continued from the top end by capillary phenomenon. Then, surface treatment or light chemical etching is performed on a P- type ribbon crystal 11 obtained by said method. A P-N junction 13, on the surface layer portion of which an N<+>-layer 12 is diffused and formed, is yielded. Thereafter, the junction 13 on one side is remained, and the junction 13 on the other side is etched out. Then, heat treatment is performed in inactive gas such as N2 at 650-850 deg.C for 5min or more. Thereafter, grid shaped positive electrodes 14 are formed on the layer 12 which is to become a light receiving plane, and a negative electrode 15 is formed on the P-type layer 11 on the bottom surface, thereby a solar cell is formed. In this method, since the completeness of the crystal can be restored, the pull-up speed can made fast.
JP9519379A 1979-07-25 1979-07-25 Manufacture of solar cell Granted JPS5619680A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9519379A JPS5619680A (en) 1979-07-25 1979-07-25 Manufacture of solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9519379A JPS5619680A (en) 1979-07-25 1979-07-25 Manufacture of solar cell

Publications (2)

Publication Number Publication Date
JPS5619680A true JPS5619680A (en) 1981-02-24
JPS5759676B2 JPS5759676B2 (en) 1982-12-15

Family

ID=14130905

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9519379A Granted JPS5619680A (en) 1979-07-25 1979-07-25 Manufacture of solar cell

Country Status (1)

Country Link
JP (1) JPS5619680A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3316417A1 (en) * 1983-05-05 1984-11-08 Telefunken electronic GmbH, 7100 Heilbronn SOLAR CELL
US5082791A (en) * 1988-05-13 1992-01-21 Mobil Solar Energy Corporation Method of fabricating solar cells

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51126324A (en) * 1975-02-26 1976-11-04 Siemens Ag Producing method of silicon chips in sheet form
JPS5237790A (en) * 1975-09-20 1977-03-23 Agency Of Ind Science & Technol Process for production of polycrystalline semiconductor films

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51126324A (en) * 1975-02-26 1976-11-04 Siemens Ag Producing method of silicon chips in sheet form
JPS5237790A (en) * 1975-09-20 1977-03-23 Agency Of Ind Science & Technol Process for production of polycrystalline semiconductor films

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3316417A1 (en) * 1983-05-05 1984-11-08 Telefunken electronic GmbH, 7100 Heilbronn SOLAR CELL
US4543444A (en) * 1983-05-05 1985-09-24 Telefunken Electronic Gmbh Solar-cell
US5082791A (en) * 1988-05-13 1992-01-21 Mobil Solar Energy Corporation Method of fabricating solar cells

Also Published As

Publication number Publication date
JPS5759676B2 (en) 1982-12-15

Similar Documents

Publication Publication Date Title
FR2363898A1 (en) SOLAR BATTERY AND PROCESS FOR THE MANUFACTURE OF THE SAME
JPS6482615A (en) Manufacture of semiconductor element
JPS5619680A (en) Manufacture of solar cell
JPS54161887A (en) Schottky diode containing guard ring and its manufacture
JPS54154272A (en) Contact forming method for semiconductor device
JPS55162288A (en) Manufacture of buried type photosemiconductor device
JPS5648140A (en) Manufacture of semiconductor device
CN110112260B (en) Diffusion Method of Monocrystalline Silicon-Based Inverted Pyramid-like Textured Structure
JPS5312289A (en) Production of semiconductor device
JPS57186339A (en) Etching method for silicon
JPS54109765A (en) Manufacture of semiconductor device
JPS5534470A (en) Production for solar battery
JPS55162240A (en) Semiconductor device and its manufacture
JPS54101278A (en) Manufacture for semiconductor device
JPS5518010A (en) Semiconductor device
JPS558079A (en) Solar battery
JPS5578571A (en) Manufacture of semiconductor device
JPS54129881A (en) Manufacture for semiconductor device
JPS56146238A (en) Etching method of germanium semiconductor element and etching liquid used therefor
JPS5748258A (en) Semiconductor memory
JPS5723262A (en) Manufacture of semiconductor device
JPS5563883A (en) Manufacturing method of photoelectric semiconductor converter
JPS5463689A (en) Production of semiconductor substrate for solar battery
JPS574173A (en) Semiconductor device
JPS5626480A (en) Semiconductor light emitting device and manufacturing process thereof