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JPS54154272A - Contact forming method for semiconductor device - Google Patents

Contact forming method for semiconductor device

Info

Publication number
JPS54154272A
JPS54154272A JP6359678A JP6359678A JPS54154272A JP S54154272 A JPS54154272 A JP S54154272A JP 6359678 A JP6359678 A JP 6359678A JP 6359678 A JP6359678 A JP 6359678A JP S54154272 A JPS54154272 A JP S54154272A
Authority
JP
Japan
Prior art keywords
film
poly
crystal
aperture
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6359678A
Other languages
Japanese (ja)
Other versions
JPS6133253B2 (en
Inventor
Atsushi Ueno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP6359678A priority Critical patent/JPS54154272A/en
Publication of JPS54154272A publication Critical patent/JPS54154272A/en
Publication of JPS6133253B2 publication Critical patent/JPS6133253B2/ja
Granted legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To present the parttern through the self-matching type etching at the impurity introduction part of the poly-crystal Si film by making use of the fact that the etching speed is high at that area, and thus to avoid the disconnection of the electrode wiring provided on the residual Si film.
CONSTITUTION: SiO2 film 2 and PSG film 3 are coated in lamination onto Si substrate 1 with aperture 4 drilled at the center part of the substrate, and then poly- crystal Si film 5 is stacked over the entire surface. And poly-crystal film 5a containing P diffused from film 3 is grown on film 3 with the heat treatment, and poly- crystal film 5b containing no P is grown on aperture 4 each. Then film 5 is etched by sputtering using the Freon gas, and only film 5a ia removed by making use of the fact that the poly-crystal Si film containing the impurity features a high etching speed. After this, the ion is injected into substrate 1 through film 5b remaining within aperture 4 to form N-type region 6, and Al electrode 7 connecting to region 6 is coated via film 5b and with extension over film 3.
COPYRIGHT: (C)1979,JPO&Japio
JP6359678A 1978-05-26 1978-05-26 Contact forming method for semiconductor device Granted JPS54154272A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6359678A JPS54154272A (en) 1978-05-26 1978-05-26 Contact forming method for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6359678A JPS54154272A (en) 1978-05-26 1978-05-26 Contact forming method for semiconductor device

Publications (2)

Publication Number Publication Date
JPS54154272A true JPS54154272A (en) 1979-12-05
JPS6133253B2 JPS6133253B2 (en) 1986-08-01

Family

ID=13233800

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6359678A Granted JPS54154272A (en) 1978-05-26 1978-05-26 Contact forming method for semiconductor device

Country Status (1)

Country Link
JP (1) JPS54154272A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5780767A (en) * 1980-11-07 1982-05-20 Fujitsu Ltd Semiconductor device and manufacture thereof
JPS5788724A (en) * 1980-11-21 1982-06-02 Fujitsu Ltd Manufacture of semiconductor device
JPS57106067A (en) * 1980-12-23 1982-07-01 Toshiba Corp Manufacture of semiconductor device
JPS5852872A (en) * 1981-09-24 1983-03-29 Nec Corp Semiconductor integrated circuit device
JPS59135724A (en) * 1983-01-24 1984-08-04 Seiko Epson Corp Manufacturing method of semiconductor device
JPS6089921A (en) * 1983-10-24 1985-05-20 Rohm Co Ltd Manufacture of semiconductor device
JPS62139321A (en) * 1985-12-12 1987-06-23 Fujitsu Ltd Manufacturing method of semiconductor device
JPS62268130A (en) * 1986-05-15 1987-11-20 Toshiba Corp Manufacture of semiconductor device
JPS63112357A (en) * 1986-10-25 1988-05-17 Akitomo Yano Pinch roll

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5780767A (en) * 1980-11-07 1982-05-20 Fujitsu Ltd Semiconductor device and manufacture thereof
JPS5788724A (en) * 1980-11-21 1982-06-02 Fujitsu Ltd Manufacture of semiconductor device
JPS57106067A (en) * 1980-12-23 1982-07-01 Toshiba Corp Manufacture of semiconductor device
JPS5852872A (en) * 1981-09-24 1983-03-29 Nec Corp Semiconductor integrated circuit device
JPS59135724A (en) * 1983-01-24 1984-08-04 Seiko Epson Corp Manufacturing method of semiconductor device
JPS6089921A (en) * 1983-10-24 1985-05-20 Rohm Co Ltd Manufacture of semiconductor device
JPS62139321A (en) * 1985-12-12 1987-06-23 Fujitsu Ltd Manufacturing method of semiconductor device
JPS62268130A (en) * 1986-05-15 1987-11-20 Toshiba Corp Manufacture of semiconductor device
JPS63112357A (en) * 1986-10-25 1988-05-17 Akitomo Yano Pinch roll
JPH0521821B2 (en) * 1986-10-25 1993-03-25 Akitomo Yano

Also Published As

Publication number Publication date
JPS6133253B2 (en) 1986-08-01

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