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JPS54161887A - Schottky diode containing guard ring and its manufacture - Google Patents

Schottky diode containing guard ring and its manufacture

Info

Publication number
JPS54161887A
JPS54161887A JP7117478A JP7117478A JPS54161887A JP S54161887 A JPS54161887 A JP S54161887A JP 7117478 A JP7117478 A JP 7117478A JP 7117478 A JP7117478 A JP 7117478A JP S54161887 A JPS54161887 A JP S54161887A
Authority
JP
Japan
Prior art keywords
layer
junction
substrate
guard ring
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7117478A
Other languages
Japanese (ja)
Other versions
JPS586313B2 (en
Inventor
Tetsushi Sakai
Hisakazu Mukai
Yasusuke Yamamoto
Yoshiharu Kobayashi
Hiroki Yamauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP53071174A priority Critical patent/JPS586313B2/en
Publication of JPS54161887A publication Critical patent/JPS54161887A/en
Publication of JPS586313B2 publication Critical patent/JPS586313B2/en
Expired legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To obtain a Schottky diode containing the guard ring of a small junction capacity by extending and inserting part of the P-type guard ring layer between the electrode and the insulator film of the N-type Si substrate.
CONSTITUTION: SiO27 and P-type poly Si34 are laminated on N-type Si substrate; the eave part is formed to layer 34 by the selective etching; and the substrate is covered again with P-type poly Si51. Then the ion etching is applied to leave layer 34 and layer 37 under the eave part in order to form layer 38. The heat treatment is carried out to form P-diffusion layer 4 from layer 38, and then guard ring 5 and pn junction 3 are formed respectively. After this, metal layer 18 is laminated to obtain Schottky junction 9 and then to form the ohmic junction between junction 9 and P-layer 4. Electrode 8 is formed and layer 38 is etched to form layer 10 with electrode 11 attached to the rear surface of the substrate. In this case, layer 7 is distant away from the electrode by the amount of the thickness of layer 10, and thus no alloy is produced with the substrate. As a result, layer 4 can be made shallow with reduced capacity of junction 3, accordingly facilitating the manufacture and increasing the yield.
COPYRIGHT: (C)1979,JPO&Japio
JP53071174A 1978-06-13 1978-06-13 Short-circuit diode with guard ring and manufacturing method thereof Expired JPS586313B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53071174A JPS586313B2 (en) 1978-06-13 1978-06-13 Short-circuit diode with guard ring and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53071174A JPS586313B2 (en) 1978-06-13 1978-06-13 Short-circuit diode with guard ring and manufacturing method thereof

Publications (2)

Publication Number Publication Date
JPS54161887A true JPS54161887A (en) 1979-12-21
JPS586313B2 JPS586313B2 (en) 1983-02-03

Family

ID=13453023

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53071174A Expired JPS586313B2 (en) 1978-06-13 1978-06-13 Short-circuit diode with guard ring and manufacturing method thereof

Country Status (1)

Country Link
JP (1) JPS586313B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56137680A (en) * 1980-03-24 1981-10-27 Ibm Method of forming hole
JPS57187970A (en) * 1981-05-13 1982-11-18 Ibm Schottky barrier diode
JPS58210667A (en) * 1982-06-01 1983-12-07 Toshiba Corp Manufacturing method of semiconductor device
US4796069A (en) * 1981-05-13 1989-01-03 International Business Machines Corporation Schottky diode having limited area self-aligned guard ring and method for making same

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59135791A (en) * 1983-01-24 1984-08-04 日本メクトロン株式会社 Flexible jumper
JPS605010U (en) * 1983-06-23 1985-01-14 ニチバン株式会社 conductive adhesive tape
JPS6049510A (en) * 1983-08-26 1985-03-18 シャープ株式会社 Film sheet with conductor wirings
JPH0126745Y2 (en) * 1984-09-14 1989-08-10
JPS61169906U (en) * 1985-04-11 1986-10-21

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS509673A (en) * 1973-05-28 1975-01-31

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS509673A (en) * 1973-05-28 1975-01-31

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56137680A (en) * 1980-03-24 1981-10-27 Ibm Method of forming hole
JPH0137855B2 (en) * 1980-03-24 1989-08-09 Intaanashonaru Bijinesu Mashiinzu Corp
JPS57187970A (en) * 1981-05-13 1982-11-18 Ibm Schottky barrier diode
US4796069A (en) * 1981-05-13 1989-01-03 International Business Machines Corporation Schottky diode having limited area self-aligned guard ring and method for making same
JPS58210667A (en) * 1982-06-01 1983-12-07 Toshiba Corp Manufacturing method of semiconductor device
JPH0158858B2 (en) * 1982-06-01 1989-12-13 Tokyo Shibaura Electric Co

Also Published As

Publication number Publication date
JPS586313B2 (en) 1983-02-03

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