JPS56146238A - Etching method of germanium semiconductor element and etching liquid used therefor - Google Patents
Etching method of germanium semiconductor element and etching liquid used thereforInfo
- Publication number
- JPS56146238A JPS56146238A JP5082180A JP5082180A JPS56146238A JP S56146238 A JPS56146238 A JP S56146238A JP 5082180 A JP5082180 A JP 5082180A JP 5082180 A JP5082180 A JP 5082180A JP S56146238 A JPS56146238 A JP S56146238A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- etched
- speed
- germanium wafer
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Abstract
PURPOSE:To apply an etching in easy in controlling an etching condition and good operativity by a method wherein a germanium wafer is etched with an etching liquid composed of hydrochloric acid, hydrogen peroxide and water. CONSTITUTION:The etching liquid composed of the hydrochloric acid: hydrogen peroxide: water=1:1:6 is made and the germanium wafer is put in the liquid to be etched on the surface. As understood from the drawing, the germanium wafer in the surface orientation (111) is etched at the termperature of 20 deg. at the speed of approximately 8mum/100min. The etching speed is increased also accompanying the temperature rise of the etching liquid. However, the etching speed is so slow that the etching depth is easily controlled. Further, the etching condition is satisfactory and smooth etching surface can be obtained. A dark current can be reduced by using such an etching method for manufacturing a mesa-type photodiode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5082180A JPS56146238A (en) | 1980-04-16 | 1980-04-16 | Etching method of germanium semiconductor element and etching liquid used therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5082180A JPS56146238A (en) | 1980-04-16 | 1980-04-16 | Etching method of germanium semiconductor element and etching liquid used therefor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56146238A true JPS56146238A (en) | 1981-11-13 |
Family
ID=12869422
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5082180A Pending JPS56146238A (en) | 1980-04-16 | 1980-04-16 | Etching method of germanium semiconductor element and etching liquid used therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56146238A (en) |
-
1980
- 1980-04-16 JP JP5082180A patent/JPS56146238A/en active Pending
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