JPS5578546A - Manufacture of semiconductor - Google Patents
Manufacture of semiconductorInfo
- Publication number
- JPS5578546A JPS5578546A JP15192378A JP15192378A JPS5578546A JP S5578546 A JPS5578546 A JP S5578546A JP 15192378 A JP15192378 A JP 15192378A JP 15192378 A JP15192378 A JP 15192378A JP S5578546 A JPS5578546 A JP S5578546A
- Authority
- JP
- Japan
- Prior art keywords
- film
- glass
- coat
- smoothened
- uneven
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 238000010521 absorption reaction Methods 0.000 abstract 3
- 239000011521 glass Substances 0.000 abstract 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract 2
- 239000011574 phosphorus Substances 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
- 239000005368 silicate glass Substances 0.000 abstract 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE: To provide on uneven insulating film the coat having a larger beam absorption coefficient and make heat absorption of the coat by applying laser beam thereto so that the surface of the film under the coat is melted to be smoothened.
CONSTITUTION: The whole range of an uneven integrated substrate is covered with 0.3W2μ-thick insulating film of phosphorus silicate glass, or phosphorus, boron or silicic acid glass 17, and the film with 100W1,000Å-thick polysilicon film 18. Laser beam pulses are applied to the film 18 at a rate of 0.2W0.5J/cm2. The film 18 has a larger laser-beam absorption coefficient than the glass 17. Therefore, the temperature of the film 18 rises momentarily, and the glass 17 thereunder becomes fluidic so that the surface thereof is smoothened.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15192378A JPS5578546A (en) | 1978-12-11 | 1978-12-11 | Manufacture of semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15192378A JPS5578546A (en) | 1978-12-11 | 1978-12-11 | Manufacture of semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5578546A true JPS5578546A (en) | 1980-06-13 |
Family
ID=15529146
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15192378A Pending JPS5578546A (en) | 1978-12-11 | 1978-12-11 | Manufacture of semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5578546A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5750431A (en) * | 1980-09-10 | 1982-03-24 | Toshiba Corp | Forming method for minute pattern |
| JPS60198847A (en) * | 1984-03-23 | 1985-10-08 | Nec Corp | Semiconductor device and manufacture thereof |
| JPH0336751A (en) * | 1989-07-04 | 1991-02-18 | Matsushita Electron Corp | Manufacture of semiconductor device |
-
1978
- 1978-12-11 JP JP15192378A patent/JPS5578546A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5750431A (en) * | 1980-09-10 | 1982-03-24 | Toshiba Corp | Forming method for minute pattern |
| JPS60198847A (en) * | 1984-03-23 | 1985-10-08 | Nec Corp | Semiconductor device and manufacture thereof |
| JPH0336751A (en) * | 1989-07-04 | 1991-02-18 | Matsushita Electron Corp | Manufacture of semiconductor device |
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