JPS56167240A - Photoelectric converter - Google Patents
Photoelectric converterInfo
- Publication number
- JPS56167240A JPS56167240A JP7075980A JP7075980A JPS56167240A JP S56167240 A JPS56167240 A JP S56167240A JP 7075980 A JP7075980 A JP 7075980A JP 7075980 A JP7075980 A JP 7075980A JP S56167240 A JPS56167240 A JP S56167240A
- Authority
- JP
- Japan
- Prior art keywords
- dark current
- layer
- photoconductive
- as2se3
- reliability
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/39—Charge-storage screens
- H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
- H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
- H01J29/456—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions exhibiting no discontinuities, e.g. consisting of uniform layers
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
Abstract
PURPOSE:To improve the reliability by forming more than one layer of dark current suppression film between a transparent electrode and a photoconductive layer thereby suppressing the dark current even when strong field is applied on the joint interface. CONSTITUTION:Selenium compound such as As2Se3, CdSe, ZnSe is employed as a photoconductive material, then a transparent electrode 2 such as In2O3, SnO2 is provided on a transparent glass substrate 1 thereafter while heating the substrate to 1,000 deg.C a dark current suppression film 3 composed of more than one layer of Sb2O3, Bi2O3 is formed through spattering. Thereafter a photoconductive film As2Se3 4 is deposited and SnO2 electrode 5 is formed on the uppermost section. Consequently the dark current is suppressed thereby it can withstand against long term usage resulting in the improvement of the reliability.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7075980A JPS56167240A (en) | 1980-05-29 | 1980-05-29 | Photoelectric converter |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7075980A JPS56167240A (en) | 1980-05-29 | 1980-05-29 | Photoelectric converter |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56167240A true JPS56167240A (en) | 1981-12-22 |
Family
ID=13440750
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7075980A Pending JPS56167240A (en) | 1980-05-29 | 1980-05-29 | Photoelectric converter |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56167240A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS605557A (en) * | 1983-06-24 | 1985-01-12 | Canon Inc | Photosensor |
JPS6161459A (en) * | 1984-09-03 | 1986-03-29 | Matsushita Electric Ind Co Ltd | Manufacturing method of photoelectric conversion device |
JPS61221689A (en) * | 1985-03-28 | 1986-10-02 | Toshiba Corp | Detector for radial rays |
JP2011228021A (en) * | 2010-04-15 | 2011-11-10 | Nippon Hoso Kyokai <Nhk> | Photoconductive element and image pickup device |
-
1980
- 1980-05-29 JP JP7075980A patent/JPS56167240A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS605557A (en) * | 1983-06-24 | 1985-01-12 | Canon Inc | Photosensor |
JPS6161459A (en) * | 1984-09-03 | 1986-03-29 | Matsushita Electric Ind Co Ltd | Manufacturing method of photoelectric conversion device |
JPH0564467B2 (en) * | 1984-09-03 | 1993-09-14 | Matsushita Electric Ind Co Ltd | |
JPS61221689A (en) * | 1985-03-28 | 1986-10-02 | Toshiba Corp | Detector for radial rays |
JPH0562712B2 (en) * | 1985-03-28 | 1993-09-09 | Tokyo Shibaura Electric Co | |
JP2011228021A (en) * | 2010-04-15 | 2011-11-10 | Nippon Hoso Kyokai <Nhk> | Photoconductive element and image pickup device |
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