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JPS54102992A - Photoelectric converting device - Google Patents

Photoelectric converting device

Info

Publication number
JPS54102992A
JPS54102992A JP1011078A JP1011078A JPS54102992A JP S54102992 A JPS54102992 A JP S54102992A JP 1011078 A JP1011078 A JP 1011078A JP 1011078 A JP1011078 A JP 1011078A JP S54102992 A JPS54102992 A JP S54102992A
Authority
JP
Japan
Prior art keywords
electrode
region
film
junction
circuit element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1011078A
Other languages
Japanese (ja)
Other versions
JPS5846066B2 (en
Inventor
Takao Chikamura
Shinji Fujiwara
Shoichi Fukai
Yasuaki Terui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP53010110A priority Critical patent/JPS5846066B2/en
Priority to US06/006,129 priority patent/US4236829A/en
Priority to GB7903077A priority patent/GB2014783B/en
Priority to DE2903651A priority patent/DE2903651C2/en
Priority to FR7902477A priority patent/FR2416554A1/en
Publication of JPS54102992A publication Critical patent/JPS54102992A/en
Publication of JPS5846066B2 publication Critical patent/JPS5846066B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To improve the S/N ratio by forming the electrode which has an ohmic contact with the circuit element on the Si substrate containing the circuit element and which gives no evil effect to the hetero-junction and furthermore forming another hetero-junction featuring a high sensitivity and reduced dark current on the above mentioned electrode. CONSTITUTION:N<+>-type region 11 and P<+>-type region 12 are formed through diffusion on P-type Si substrate 10, and the entire surface is covered with insulator layer 16 and 17. Then an aperture is drilled on region 11, and 1st electrode 18 connecting to region 11 and extending onto the lamination film is coated, and Mo, Ta, Ti and the like are chosen for the material used then. In addition, positive hole blocking layer 19 composed of Zn, O, ZnS, ZnSe, CdS, CdSe, etc. is formed on electrode 18, and furthermore the photoconductive substance composed of (Zn1-xCdxTe)1-y(In2Te3)y is formed on layer 19. This photoconductive substance is changed into the photoconductive film 20 through the heat treatment, and transparent 2nd electrode 21 is provided on film 20. Thus, the dark current is reduced by selecting the materials to be used.
JP53010110A 1978-01-31 1978-01-31 Photoelectric conversion device Expired JPS5846066B2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP53010110A JPS5846066B2 (en) 1978-01-31 1978-01-31 Photoelectric conversion device
US06/006,129 US4236829A (en) 1978-01-31 1979-01-24 Solid-state image sensor
GB7903077A GB2014783B (en) 1978-01-31 1979-01-29 Solid-state image sensor
DE2903651A DE2903651C2 (en) 1978-01-31 1979-01-31 Solid state image sensing device
FR7902477A FR2416554A1 (en) 1978-01-31 1979-01-31 SOLID STATE SHOOTING DEVICE

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53010110A JPS5846066B2 (en) 1978-01-31 1978-01-31 Photoelectric conversion device

Publications (2)

Publication Number Publication Date
JPS54102992A true JPS54102992A (en) 1979-08-13
JPS5846066B2 JPS5846066B2 (en) 1983-10-14

Family

ID=11741166

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53010110A Expired JPS5846066B2 (en) 1978-01-31 1978-01-31 Photoelectric conversion device

Country Status (1)

Country Link
JP (1) JPS5846066B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5670673A (en) * 1979-11-14 1981-06-12 Hitachi Ltd Photoelectric converter
JPS5742174A (en) * 1980-08-27 1982-03-09 Fuji Photo Film Co Ltd Solid image pickup device
JPS5752276A (en) * 1980-09-12 1982-03-27 Hitachi Ltd Solid image pickup element

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5670673A (en) * 1979-11-14 1981-06-12 Hitachi Ltd Photoelectric converter
JPS6315750B2 (en) * 1979-11-14 1988-04-06 Hitachi Ltd
JPS5742174A (en) * 1980-08-27 1982-03-09 Fuji Photo Film Co Ltd Solid image pickup device
JPS5752276A (en) * 1980-09-12 1982-03-27 Hitachi Ltd Solid image pickup element

Also Published As

Publication number Publication date
JPS5846066B2 (en) 1983-10-14

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