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JPS57183076A - Field control type optical semiconductor device - Google Patents

Field control type optical semiconductor device

Info

Publication number
JPS57183076A
JPS57183076A JP56068804A JP6880481A JPS57183076A JP S57183076 A JPS57183076 A JP S57183076A JP 56068804 A JP56068804 A JP 56068804A JP 6880481 A JP6880481 A JP 6880481A JP S57183076 A JPS57183076 A JP S57183076A
Authority
JP
Japan
Prior art keywords
semiconductor device
type optical
optical semiconductor
control type
field control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56068804A
Other languages
Japanese (ja)
Other versions
JPS6259477B2 (en
Inventor
Eiichi Yamaguchi
Takeshi Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56068804A priority Critical patent/JPS57183076A/en
Publication of JPS57183076A publication Critical patent/JPS57183076A/en
Publication of JPS6259477B2 publication Critical patent/JPS6259477B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/2823—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices being conductor-insulator-semiconductor devices, e.g. diodes or charge-coupled devices [CCD]

Landscapes

  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To obtain photoconductivity corresponding to the intensity of light by letting an optical filter into a region between two electrodes on an intrinsic semiconductor substrate through a transparent electrode and insulation film. CONSTITUTION:An intrinsic semiconductor substrate 1 is provided and electrodes 3 and 4 are formed by ohmic formation on its main surface 2. A transparent electrode 12 is formed on a region 5 between the electrodes 3 and 4 on the substrate 1 via a transparent insulation layer 11 which is formed on the side of the main surface 2. The light 6 is let incident into the side of the main surface 2 of the region 5 on the substrate 1 through the insulation layer 11 and the electrode 12. With this constitution, the photoconductivity corresponding to the intensity of the light can be obtained and the corresponding photoelectric current can be supplied to a load.
JP56068804A 1981-05-07 1981-05-07 Field control type optical semiconductor device Granted JPS57183076A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56068804A JPS57183076A (en) 1981-05-07 1981-05-07 Field control type optical semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56068804A JPS57183076A (en) 1981-05-07 1981-05-07 Field control type optical semiconductor device

Publications (2)

Publication Number Publication Date
JPS57183076A true JPS57183076A (en) 1982-11-11
JPS6259477B2 JPS6259477B2 (en) 1987-12-11

Family

ID=13384264

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56068804A Granted JPS57183076A (en) 1981-05-07 1981-05-07 Field control type optical semiconductor device

Country Status (1)

Country Link
JP (1) JPS57183076A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01278783A (en) * 1988-05-02 1989-11-09 Olympus Optical Co Ltd Photodetecting element

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02224703A (en) * 1989-02-28 1990-09-06 Matsushita Electric Ind Co Ltd Dining table with built-in cooking apparatus and its control system
JPH0460226U (en) * 1990-09-28 1992-05-22

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01278783A (en) * 1988-05-02 1989-11-09 Olympus Optical Co Ltd Photodetecting element

Also Published As

Publication number Publication date
JPS6259477B2 (en) 1987-12-11

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