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JPS55127083A - Semiconductor element - Google Patents

Semiconductor element

Info

Publication number
JPS55127083A
JPS55127083A JP3587379A JP3587379A JPS55127083A JP S55127083 A JPS55127083 A JP S55127083A JP 3587379 A JP3587379 A JP 3587379A JP 3587379 A JP3587379 A JP 3587379A JP S55127083 A JPS55127083 A JP S55127083A
Authority
JP
Japan
Prior art keywords
layer
layers
semiconductor element
light
junctions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3587379A
Other languages
Japanese (ja)
Other versions
JPS5944791B2 (en
Inventor
Shinichiro Ishihara
Koshiro Mori
Tsuneo Tanaka
Seiichi Nagata
Shoichi Fukai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP54035873A priority Critical patent/JPS5944791B2/en
Priority to US06/132,406 priority patent/US4329699A/en
Publication of JPS55127083A publication Critical patent/JPS55127083A/en
Publication of JPS5944791B2 publication Critical patent/JPS5944791B2/en
Priority to JP60198020A priority patent/JPS61233751A/en
Expired legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photoreceptors In Electrophotography (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Bipolar Transistors (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE: To obtain such an element as is high in photoconductivity against a light in visible range, high in voltage resistance but small in dark current by constituting the semiconductor element having junctions of a different kind in variant noncrystal silicon carbide.
CONSTITUTION: Noncrystal silicon carbide a-Si1-xCx layers 2, 3 are formed on a conductive substrate 1, and the layers 2, 3 are made variant in composition x and also to have junctions of a different kind on the surface of the layers 2, 3. A transparent conductive film 4 using Pt, Au, In2O, etc. is formed on the layer 3. Further, electrodes 5, 6 connecting an external electric circuit are provided on the film 4 and the substrate 1. Then, a silicon compound is subjected to glow discharge decomposition in an inert gas stmosphere to form the layer 2, and a silicon compound and a carbon compound are subjected to glow discharge decomposition to form the layer 3, thus constituting a semiconductor element. A light excitation charge carrier is produced by the layer 2 in induction to the irradiated light in a visible range, and the charge carrier is transmitted to the layer 3 of high voltage resistance.
COPYRIGHT: (C)1980,JPO&Japio
JP54035873A 1979-03-26 1979-03-26 semiconductor element Expired JPS5944791B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP54035873A JPS5944791B2 (en) 1979-03-26 1979-03-26 semiconductor element
US06/132,406 US4329699A (en) 1979-03-26 1980-03-21 Semiconductor device and method of manufacturing the same
JP60198020A JPS61233751A (en) 1979-03-26 1985-09-06 Electrophotographic sensitive layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54035873A JPS5944791B2 (en) 1979-03-26 1979-03-26 semiconductor element

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP60198020A Division JPS61233751A (en) 1979-03-26 1985-09-06 Electrophotographic sensitive layer
JP60198021A Division JPS6175568A (en) 1985-09-06 1985-09-06 Method for manufacturing semiconductor devices

Publications (2)

Publication Number Publication Date
JPS55127083A true JPS55127083A (en) 1980-10-01
JPS5944791B2 JPS5944791B2 (en) 1984-11-01

Family

ID=12454105

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54035873A Expired JPS5944791B2 (en) 1979-03-26 1979-03-26 semiconductor element

Country Status (1)

Country Link
JP (1) JPS5944791B2 (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57160176A (en) * 1981-09-26 1982-10-02 Semiconductor Energy Lab Co Ltd Photoelectric converter
JPS5853869A (en) * 1981-09-26 1983-03-30 Semiconductor Energy Lab Co Ltd Photoelectric conversion device manufacturing method
JPS5888753A (en) * 1981-11-24 1983-05-26 Oki Electric Ind Co Ltd Electrophotographic photoreceptor
JPS5895876A (en) * 1981-12-01 1983-06-07 Canon Inc photoconductive member
JPS5895873A (en) * 1981-12-02 1983-06-07 Konishiroku Photo Ind Co Ltd Amorphous silicon solar battery
JPS58118143A (en) * 1982-01-06 1983-07-14 Semiconductor Energy Lab Co Ltd Semiconductor device
FR2523371A1 (en) * 1982-03-10 1983-09-16 Contellec Michel Le HYDROGEN AMORPHOUS SILICON CARBIDE PHOTOCONDUCTIVE ELEMENT AND VIDEO RETINE CELL USING SUCH AN ELEMENT
JPS58192387A (en) * 1982-04-27 1983-11-09 ア−ルシ−エ−　コ−ポレ−シヨン Photocell
JPS59119875A (en) * 1982-12-27 1984-07-11 Hoya Corp solar cells
JPS59119874A (en) * 1982-12-27 1984-07-11 Hoya Corp solar cells
JPS61236159A (en) * 1985-04-12 1986-10-21 Ricoh Co Ltd amorphous silicon optical sensor
JPS6263480A (en) * 1986-09-13 1987-03-20 Semiconductor Energy Lab Co Ltd Photoelectric conversion device
JPS6477971A (en) * 1987-09-18 1989-03-23 Sanyo Electric Co Manufacture of photovoltaic device
US5262263A (en) * 1989-01-31 1993-11-16 Kyocera Corporation Layer electrophotographic sensitive member comprising morphous silicon

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57160176A (en) * 1981-09-26 1982-10-02 Semiconductor Energy Lab Co Ltd Photoelectric converter
JPS5853869A (en) * 1981-09-26 1983-03-30 Semiconductor Energy Lab Co Ltd Photoelectric conversion device manufacturing method
JPS5888753A (en) * 1981-11-24 1983-05-26 Oki Electric Ind Co Ltd Electrophotographic photoreceptor
JPS5895876A (en) * 1981-12-01 1983-06-07 Canon Inc photoconductive member
JPS5895873A (en) * 1981-12-02 1983-06-07 Konishiroku Photo Ind Co Ltd Amorphous silicon solar battery
JPS58118143A (en) * 1982-01-06 1983-07-14 Semiconductor Energy Lab Co Ltd Semiconductor device
FR2523371A1 (en) * 1982-03-10 1983-09-16 Contellec Michel Le HYDROGEN AMORPHOUS SILICON CARBIDE PHOTOCONDUCTIVE ELEMENT AND VIDEO RETINE CELL USING SUCH AN ELEMENT
JPS58192387A (en) * 1982-04-27 1983-11-09 ア−ルシ−エ−　コ−ポレ−シヨン Photocell
JPS59119875A (en) * 1982-12-27 1984-07-11 Hoya Corp solar cells
JPS59119874A (en) * 1982-12-27 1984-07-11 Hoya Corp solar cells
JPS61236159A (en) * 1985-04-12 1986-10-21 Ricoh Co Ltd amorphous silicon optical sensor
JPS6263480A (en) * 1986-09-13 1987-03-20 Semiconductor Energy Lab Co Ltd Photoelectric conversion device
JPS6477971A (en) * 1987-09-18 1989-03-23 Sanyo Electric Co Manufacture of photovoltaic device
US5262263A (en) * 1989-01-31 1993-11-16 Kyocera Corporation Layer electrophotographic sensitive member comprising morphous silicon

Also Published As

Publication number Publication date
JPS5944791B2 (en) 1984-11-01

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