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JPS5477088A - Semiconductor photo detector - Google Patents

Semiconductor photo detector

Info

Publication number
JPS5477088A
JPS5477088A JP14417977A JP14417977A JPS5477088A JP S5477088 A JPS5477088 A JP S5477088A JP 14417977 A JP14417977 A JP 14417977A JP 14417977 A JP14417977 A JP 14417977A JP S5477088 A JPS5477088 A JP S5477088A
Authority
JP
Japan
Prior art keywords
layer
concave parts
light
electric field
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14417977A
Other languages
Japanese (ja)
Inventor
Takafumi Tsuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14417977A priority Critical patent/JPS5477088A/en
Publication of JPS5477088A publication Critical patent/JPS5477088A/en
Pending legal-status Critical Current

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  • Light Receiving Elements (AREA)

Abstract

PURPOSE: To realize a semiconductor photo detector of good performance by providing groove form concave parts in a semiconductor substrate, diffusion-forming a P+ layer and an N+ layer therein and reverse-biasing between these regions thereby forming a depletion layer.
CONSTITUTION: Concave parts 9 are formed in a semiconductor substrate 10 and a P+ layer 21 and an n+ layer 22 and doped on the surface thereof. The substrate surface other than the concave parts 8 is covered with an insulation film 13. Metal films 23, 24, terminals 16, 17 are provided on the layers 21, 22 and a bias power source VB is connected to let a depletion layer shown by dot-dash lines be formed. Then, an electric field E of broken lines is produced between the layers 21, 22, yielding a light absorbing layer. When light enters the light absorbing layer through the film 13, light exciting carriers are generated and are accelerated by the electric field E, then photo current proportional to the intensity of the incident light flows into a load resistance RL.
COPYRIGHT: (C)1979,JPO&Japio
JP14417977A 1977-12-01 1977-12-01 Semiconductor photo detector Pending JPS5477088A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14417977A JPS5477088A (en) 1977-12-01 1977-12-01 Semiconductor photo detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14417977A JPS5477088A (en) 1977-12-01 1977-12-01 Semiconductor photo detector

Publications (1)

Publication Number Publication Date
JPS5477088A true JPS5477088A (en) 1979-06-20

Family

ID=15356027

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14417977A Pending JPS5477088A (en) 1977-12-01 1977-12-01 Semiconductor photo detector

Country Status (1)

Country Link
JP (1) JPS5477088A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60262473A (en) * 1984-06-08 1985-12-25 Fujitsu Ltd Optical semiconductor device
JPS62202568A (en) * 1986-12-26 1987-09-07 Shunpei Yamazaki Photoelectric conversion device
JPS6316678A (en) * 1986-12-26 1988-01-23 Shunpei Yamazaki Aphotoelectric converter
JPH01220868A (en) * 1988-02-29 1989-09-04 Hikari Gijutsu Kenkyu Kaihatsu Kk Horizontal light-receiving element
JPH02377A (en) * 1988-08-12 1990-01-05 Shunpei Yamazaki Photoelectric converting device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60262473A (en) * 1984-06-08 1985-12-25 Fujitsu Ltd Optical semiconductor device
JPS62202568A (en) * 1986-12-26 1987-09-07 Shunpei Yamazaki Photoelectric conversion device
JPS6316678A (en) * 1986-12-26 1988-01-23 Shunpei Yamazaki Aphotoelectric converter
JPH0568866B2 (en) * 1986-12-26 1993-09-29 Handotai Energy Kenkyusho
JPH01220868A (en) * 1988-02-29 1989-09-04 Hikari Gijutsu Kenkyu Kaihatsu Kk Horizontal light-receiving element
JPH02377A (en) * 1988-08-12 1990-01-05 Shunpei Yamazaki Photoelectric converting device
JPH0559590B2 (en) * 1988-08-12 1993-08-31 Shunpei Yamazaki

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