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JPS56135980A - Photoelectric conversion element - Google Patents

Photoelectric conversion element

Info

Publication number
JPS56135980A
JPS56135980A JP4006480A JP4006480A JPS56135980A JP S56135980 A JPS56135980 A JP S56135980A JP 4006480 A JP4006480 A JP 4006480A JP 4006480 A JP4006480 A JP 4006480A JP S56135980 A JPS56135980 A JP S56135980A
Authority
JP
Japan
Prior art keywords
layer
photoconductive layer
amorphous silicon
ohmic contact
photoelectric conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4006480A
Other languages
Japanese (ja)
Inventor
Toshiyuki Komatsu
Masaki Fukaya
Shunichi Uzawa
Seishiro Yoshioka
Yoshiaki Shirato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP4006480A priority Critical patent/JPS56135980A/en
Priority to US06/246,218 priority patent/US4405915A/en
Priority to DE19813112209 priority patent/DE3112209A1/en
Publication of JPS56135980A publication Critical patent/JPS56135980A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To improve the photoconductivity of a visible rays region and elevate the thermal stability and the wear-proof by a method wherein a photoconductive layer is composed of an amorphous silicon containing hydrogen or/and halogen elements. CONSTITUTION:The photoconductive layer 6 is formed on a substrate 4 on which a picture element having an ohmic contact layer 5 is formed. A common electrode 8 is formed further on the photoconductive layer 6 by a vacuum evaporating method through the ohmic contact layer 7. The photoconductive layer 6 is composed of the amorphous silicon layer containing 1-30atom% of hydrogen or/and halogen elements and is made a layer as thick as 0.3-10mu and 0.5-3mu is suitably preferred.
JP4006480A 1980-03-28 1980-03-28 Photoelectric conversion element Pending JPS56135980A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP4006480A JPS56135980A (en) 1980-03-28 1980-03-28 Photoelectric conversion element
US06/246,218 US4405915A (en) 1980-03-28 1981-03-23 Photoelectric transducing element
DE19813112209 DE3112209A1 (en) 1980-03-28 1981-03-27 PHOTOELECTRIC CONVERTER ELEMENT

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4006480A JPS56135980A (en) 1980-03-28 1980-03-28 Photoelectric conversion element

Publications (1)

Publication Number Publication Date
JPS56135980A true JPS56135980A (en) 1981-10-23

Family

ID=12570486

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4006480A Pending JPS56135980A (en) 1980-03-28 1980-03-28 Photoelectric conversion element

Country Status (1)

Country Link
JP (1) JPS56135980A (en)

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56140674A (en) * 1980-04-04 1981-11-04 Hitachi Ltd Photosensor arraying device
JPS58106863A (en) * 1981-12-18 1983-06-25 Sanyo Electric Co Ltd Integrated semiconductor photodetector
JPS58125867A (en) * 1982-01-22 1983-07-27 Sanyo Electric Co Ltd color sensor
JPS58125865A (en) * 1982-01-22 1983-07-27 Sanyo Electric Co Ltd Photo sensor
JPS58125868A (en) * 1982-01-22 1983-07-27 Sanyo Electric Co Ltd Color sensor
JPS58125869A (en) * 1982-01-22 1983-07-27 Sanyo Electric Co Ltd Photo sensor
JPS58130563A (en) * 1982-01-29 1983-08-04 Seiko Epson Corp Manufacture of image sensor
JPS5928156A (en) * 1982-12-29 1984-02-14 Konishiroku Photo Ind Co Ltd Manufacture of exposure mask
JPS5952872A (en) * 1982-09-20 1984-03-27 Fujitsu Ltd Photo-receiving device
JPS59161862A (en) * 1983-03-07 1984-09-12 Fuji Xerox Co Ltd Manufacture of original read-out element of continuous thin film
JPS60231359A (en) * 1984-04-28 1985-11-16 Oki Electric Ind Co Ltd Photodiode array
JPS6167261A (en) * 1984-09-10 1986-04-07 Semiconductor Energy Lab Co Ltd Semiconductor device
JPS6167262A (en) * 1984-09-10 1986-04-07 Semiconductor Energy Lab Co Ltd Semiconductor device
JPS6167263A (en) * 1984-09-10 1986-04-07 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS6171665A (en) * 1984-09-17 1986-04-12 Semiconductor Energy Lab Co Ltd Semiconductor device manufacturing method
JPS62169378A (en) * 1987-01-05 1987-07-25 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS62169381A (en) * 1987-01-05 1987-07-25 Semiconductor Energy Lab Co Ltd Semiconductor device
JPS62169380A (en) * 1987-01-05 1987-07-25 Semiconductor Energy Lab Co Ltd Semiconductor device
JPS62169379A (en) * 1987-01-05 1987-07-25 Semiconductor Energy Lab Co Ltd Semiconductor device
JPS62169382A (en) * 1987-01-05 1987-07-25 Semiconductor Energy Lab Co Ltd Semiconductor device
JPS62174979A (en) * 1987-01-05 1987-07-31 Semiconductor Energy Lab Co Ltd Semiconductor device

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56140674A (en) * 1980-04-04 1981-11-04 Hitachi Ltd Photosensor arraying device
JPS58106863A (en) * 1981-12-18 1983-06-25 Sanyo Electric Co Ltd Integrated semiconductor photodetector
JPS58125867A (en) * 1982-01-22 1983-07-27 Sanyo Electric Co Ltd color sensor
JPS58125865A (en) * 1982-01-22 1983-07-27 Sanyo Electric Co Ltd Photo sensor
JPS58125868A (en) * 1982-01-22 1983-07-27 Sanyo Electric Co Ltd Color sensor
JPS58125869A (en) * 1982-01-22 1983-07-27 Sanyo Electric Co Ltd Photo sensor
JPH0477471B2 (en) * 1982-01-22 1992-12-08 Sanyo Electric Co
JPH0477470B2 (en) * 1982-01-22 1992-12-08 Sanyo Electric Co
JPH0478019B2 (en) * 1982-01-22 1992-12-10 Sanyo Electric Co
JPS58130563A (en) * 1982-01-29 1983-08-04 Seiko Epson Corp Manufacture of image sensor
JPS5952872A (en) * 1982-09-20 1984-03-27 Fujitsu Ltd Photo-receiving device
JPH0548464B2 (en) * 1982-12-29 1993-07-21 Konishiroku Photo Ind
JPS5928156A (en) * 1982-12-29 1984-02-14 Konishiroku Photo Ind Co Ltd Manufacture of exposure mask
JPS59161862A (en) * 1983-03-07 1984-09-12 Fuji Xerox Co Ltd Manufacture of original read-out element of continuous thin film
JPS60231359A (en) * 1984-04-28 1985-11-16 Oki Electric Ind Co Ltd Photodiode array
JPS6167262A (en) * 1984-09-10 1986-04-07 Semiconductor Energy Lab Co Ltd Semiconductor device
JPS6167263A (en) * 1984-09-10 1986-04-07 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS6167261A (en) * 1984-09-10 1986-04-07 Semiconductor Energy Lab Co Ltd Semiconductor device
JPS6171665A (en) * 1984-09-17 1986-04-12 Semiconductor Energy Lab Co Ltd Semiconductor device manufacturing method
JPS62169381A (en) * 1987-01-05 1987-07-25 Semiconductor Energy Lab Co Ltd Semiconductor device
JPS62169380A (en) * 1987-01-05 1987-07-25 Semiconductor Energy Lab Co Ltd Semiconductor device
JPS62169379A (en) * 1987-01-05 1987-07-25 Semiconductor Energy Lab Co Ltd Semiconductor device
JPS62169382A (en) * 1987-01-05 1987-07-25 Semiconductor Energy Lab Co Ltd Semiconductor device
JPS62174979A (en) * 1987-01-05 1987-07-31 Semiconductor Energy Lab Co Ltd Semiconductor device
JPS62169378A (en) * 1987-01-05 1987-07-25 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device

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